IP Library Granted Patent US 7,841,428
Granted Patent B2
US 7,841,428 · App. 11/351,564 · Granted Nov 30, 2010

Polycrystalline diamond apparatuses and methods of manufacture

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Quick Facts
Patent No.
US 7,841,428
App. No.
11/351,564
Granted
Nov 30, 2010
Kind
B2
Abstract

Methods of manufacturing polycrystalline diamond are disclosed. More particularly, a mixture including diamond and fullerenes may be provided. Further, the mixture may be exposed to a high pressure, high temperature sintering process. In addition, a volume of polycrystalline diamond bonded to a substrate may be formed by providing a mixture including diamond and fullerenes and exposing the mixture to a high pressure, high temperature sintering process. A drill bit for drilling a subterranean formation is disclosed. Further, polycrystalline diamond compacts are disclosed including polycrystalline diamond bonded to a substrate, wherein the polycrystalline diamond includes less than about 1% by weight or is substantially free of non-fullerenes, non-diamond carbon. Polycrystalline diamond exhibiting an increased diamond volume fraction due to the presence of fullerenes during manufacture relative to polycrystalline diamond formed without fullerenes is disclosed.

Claims (62)

1. An article of manufacture comprising:

a volume of polycrystalline diamond bonded to a substrate and having a catalyst material dispersed substantially throughout the volume of polycrystalline diamond, a majority of the volume of polycrystalline diamond comprising diamond grains approximately 2 μm or larger, the volume of polycrystalline diamond further comprising at least some unconverted fullerenes, and wherein the volume of polycrystalline diamond is formed by a method comprising:

providing a mixture comprising:

at least about 80% by weight diamond; and

fullerenes;

exposing the mixture to a pressure of at least about 60 kilobar; and

heating the mixture to a temperature of at least about 1350° Celsius.

2. The article of manufacture of claim 1 , wherein the volume of polycrystalline diamond bonded to the substrate exhibits increased wear resistance due to the presence of fullerenes during manufacture of the volume of polycrystalline diamond.

3. The article of manufacture of claim 1 , wherein the substrate comprises cobalt-cemented tungsten carbide and is substantially cylindrical.

4. The article of manufacture of claim 1 , wherein the mixture includes less than about 0.003% by weight carbon in a non-fullerenes, non-diamond form.

5. The article of manufacture of claim 1 , wherein the volume of polycrystalline diamond bonded to the substrate exhibits increased thermal stability due to the presence of fullerenes during manufacture of the volume of polycrystalline diamond.

6. The article of manufacture of claim 1 , wherein the substrate comprises at least one of the following: titanium carbide, niobium carbide, tantalum carbide, vanadium carbide, iron, and nickel.

7. The article of manufacture of claim 1 , wherein the substrate and the volume of polycrystalline diamond form a polycrystalline diamond compact.

8. The article of manufacture of claim 1 , wherein the mixture comprises at least about 0.01% by weight fullerenes.

9. The article of manufacture of claim 8 , wherein the mixture comprises at least about 0.01% by weight C 60 fullerenes.

10. The article of manufacture of claim 1 , wherein the mixture comprises between about 0.01% by weight and about 0.3% by weight fullerenes.

11. The article of manufacture of claim 1 , wherein the mixture comprises one or more of the following fullerenes: C 24 fullerenes, C 28 fullerenes, C 32 fullerenes, C 36 fullerenes, C 50 fullerenes, C 60 fullerenes, C 70 fullerenes, C 76 fullerenes, C 84 fullerenes, C 90 fullerenes, and C 94 fullerenes.

12. The article of manufacture of claim 1 , wherein the mixture comprises fullerenes containing soot or nanotubes.

13. The article of manufacture of claim 1 , wherein the mixture comprises:

diamond powder having a nominal size of about 20 microns;

at least 99% pure C 60 fullerenes.

14. A rotary drill bit for drilling a subterranean formation, comprising:

a bit body comprising a leading end having generally radially extending blades structured to facilitate drilling of a subterranean formation;

at least one cutting element comprising a substrate including a volume of polycrystalline diamond bonded to the substrate and having a catalyst material dispersed substantially throughout the volume of polycrystalline diamond, a majority of the volume of polycrystalline diamond comprising diamond grains approximately 2 μm or larger, the volume of polycrystalline diamond further comprising at least some unconverted fullerenes, and wherein the volume of polycrystalline diamond being formed by a method comprising:

providing a mixture comprising:

at least 80% by weight diamond; and

fullerenes;

exposing the mixture to a pressure of at least about 60 kilobar;

exposing the mixture to a temperature exceeding 1350° Celsius.

15. The rotary drill bit of claim 14 , wherein the volume of polycrystalline diamond bonded to the substrate exhibits increased wear resistance due to the presence of fullerenes during manufacture of the polycrystalline diamond.

16. The rotary drill bit of claim 14 , wherein the substrate comprises cobalt-cemented tungsten carbide and is substantially cylindrical.

17. The rotary drill bit of claim 14 , wherein the substrate comprises at least one of the following: titanium carbide, niobium carbide, tantalum carbide, vanadium carbide, iron, and nickel.

18. The rotary drill bit of claim 14 , wherein the mixture includes less than about 0.003% by weight carbon in a non-fullerenes, non-diamond form.

19. The rotary drill bit of claim 14 , wherein the mixture comprises at least about 0.01% by weight fullerenes.

20. The rotary drill bit of claim 14 , wherein the mixture comprises between about 0.01% by weight and about 0.3% by weight fullerenes.

21. The rotary drill bit of claim 14 , wherein the mixture comprises at least one of the following fullerenes: C 24 fullerenes, C 28 fullerenes, C 32 fullerenes, C 36 fullerenes, C 50 fullerenes, C 60 fullerenes, C 70 fullerenes, C 76 fullerenes, C 84 fullerenes, C 90 fullerenes, and C 94 fullerenes.

22. The rotary drill bit of claim 14 , wherein the mixture comprises fullerenes containing soot or nanotubes.

23. A polycrystalline diamond compact comprising:

a volume of polycrystalline diamond bonded to a substrate; and

a catalyst material dispersed substantially throughout the volume of polycrystalline diamond;

wherein a majority of the volume polycrystalline diamond comprises diamond grains approximately 2 μm or larger, the volume of polycrystalline diamond further comprising at least some unconverted fullerenes, and wherein the volume of polycrystalline diamond includes less than about 1% by weight carbon in a non-fullerenes, non-diamond form.

24. The polycrystalline diamond compact of claim 23 , wherein the substrate comprises at least one of the following: tungsten carbide, titanium carbide, niobium carbide, tantalum carbide, vanadium carbide, iron, cobalt, and nickel.

25. The polycrystalline diamond compact of claim 23 , wherein the volume of polycrystalline diamond bonded to the substrate exhibits increased wear resistance or thermal stability due to the presence of fullerenes during manufacture of the volume of polycrystalline diamond.

26. A polycrystalline diamond compact comprising:

a volume of polycrystalline diamond bonded to a substrate; and

a catalyst material dispersed substantially throughout the volume of polycrystalline diamond;

wherein a majority of the volume of polycrystalline diamond comprises diamond grains approximately 2 μm or larger, the volume of polycrystalline diamond further comprising at least some unconverted fullerenes, and wherein the volume of polycrystalline diamond is substantially free of non-fullerenes, non-diamond carbon.

27. The polycrystalline diamond compact of claim 26 , wherein the substrate comprises at least one of the following: tungsten carbide, titanium carbide, niobium carbide, tantalum carbide, vanadium carbide, iron, cobalt, and nickel.

28. The polycrystalline diamond compact of claim 26 , wherein the volume of polycrystalline diamond bonded to the substrate exhibits increased wear resistance or thermal stability due to the presence of fullerenes during manufacture of the volume of polycrystalline diamond.

29. A polycrystalline diamond compact comprising:

a volume of polycrystalline diamond bonded to a substrate; and

a catalyst material dispersed substantially throughout the volume of polycrystalline diamond;

wherein a majority of the volume of polycrystalline diamond comprises diamond grains approximately 2 μm or larger, the volume of polycrystalline diamond further comprising at least some unconverted fullerenes, and wherein the volume polycrystalline diamond exhibits a diamond volume fraction exceeding about 90%.

30. The polycrystalline diamond compact of claim 29 , wherein the substrate comprises at least one of the following: tungsten carbide, titanium carbide, niobium carbide, tantalum carbide, vanadium carbide, iron, cobalt, and nickel.

31. The polycrystalline diamond compact of claim 29 , wherein the volume of polycrystalline diamond bonded to the substrate exhibits increased wear resistance or thermal stability.

32. The polycrystalline diamond compact of claim 29 , wherein the volume of polycrystalline diamond exhibits a diamond volume fraction exceeding about 90.5%.

33. The polycrystalline diamond compact of claim 29 , wherein the volume of polycrystalline diamond exhibits a diamond volume fraction exceeding about 90.6%.

34. The polycrystalline diamond compact of claim 29 , wherein the volume of polycrystalline diamond exhibits a diamond volume fraction exceeding about 90.7%.

35. A polycrystalline diamond compact comprising:

a volume of polycrystalline diamond bonded to a substrate; and

a catalyst material dispersed substantially throughout the volume of polycrystalline diamond;

wherein a majority of the volume of polycrystalline diamond comprises diamond grains approximately 2 μm or larger, and wherein the volume of polycrystalline diamond comprises at least some unconverted fullerenes.

Assignments (6)
SECURITY INTEREST Recorded Jul 18, 2025
From: US SYNTHETIC CORPORATION
To: KEYBANK NATIONAL ASSOCIATION
Reel/Frame 074973/0089 →
RELEASE OF SECURITY INTEREST IN PATENTS Recorded Jul 17, 2025
From: JPMORGAN CHASE BANK, N.A.
To: CHAMPIONX LLC; APERGY ESP SYSTEMS, LLC; APERGY BMCS ACQUISITION CORP; HARBISON-FISCHER, INC.; NORRIS RODS, INC.,; NORRIS RODS, INC.,; NORRISEAL-WELLMARK, INC.; PCS FERGUSON, INC.; QUARTZDYNE, INC.; US SYNTHETIC CORPORATION
Reel/Frame 072004/0019 →
RELEASE OF SECURITY INTEREST Recorded Jun 7, 2022
From: BANK OF AMERICA, N.A.
To: ACE DOWNHOLE, LLC; HARBISON-FISCHER, INC.; NORRIS RODS, INC.; PCS FERGUSON, INC.; QUARTZDYNE, INC.; SPIRIT GLOBAL ENERGY SOLUTIONS, INC.; THETA OILFIELD SERVICES, INC.; APERGY BMCS ACQUISITION CORP.; NORRISEAL-WELLMARK, INC.; US SYNTHETIC CORPORATION; WINDROCK, INC.
Reel/Frame 060305/0001 →
SECURITY INTEREST Recorded Jun 5, 2020
From: ACE DOWNHOLE, LLC; APERGY BMCS ACQUISITION CORP.; HARBISON-FISCHER, INC.; NORRIS RODS, INC.; NORRISEAL-WELLMARK, INC.; PCS FERGUSON, INC.; QUARTZDYNE, INC.; SPIRIT GLOBAL ENERGY SOLUTIONS, INC.; THETA OILFIELD SERVICES, INC.; US SYNTHETIC CORPORATION; WINDROCK, INC.
To: BANK OF AMERICA, N.A.
Reel/Frame 053790/0001 →
SECURITY AGREEMENT Recorded May 9, 2018
From: APERGY (DELAWARE) FORMATION, INC.; APERGY BMCS ACQUISITION CORP.; APERGY ENERGY AUTOMATION, LLC; HARBISON-FISCHER, INC.; NORRISEAL-WELLMARK, INC.; PCS FERGUSON, INC.; QUARTZDYNE, INC.; SPIRIT GLOBAL ENERGY SOLUTIONS, INC.; US SYNTHETIC CORPORATION; WINDROCK, INC.
To: JPMORGAN CHASE BANK, N.A.
Reel/Frame 046117/0015 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 10, 2006
From: BERTAGNOLLI, KENNETH E.
To: US SYNTHETIC CORPORATION
Reel/Frame 017563/0217 →