Pixel analog-to-digital converter using a ramped transfer gate clock
View Patent ↗An image sensor includes a photosensitive region that accumulates charge corresponding to received incident light; a transfer gate for transferring charge from the photosensitive region; a voltage supply having an increasing voltage over time; a floating diffusion for receiving the charge from the photosensitive region and converting the charge to a voltage; an amplifier for receiving and amplifying a signal from the floating diffusion; a comparator for comparing a voltage from the amplifier to a reference voltage; and a counter for counting clock cycles between initiation of the increasing voltage until a signal is received from the comparator indicating charge transfer from the photosensitive region to the floating diffusion; wherein a digital signal is generated that represents an unfilled capacity of the photosensitive region.
1. An image sensor comprising:
(a) a photosensitive region that accumulates charge corresponding to received incident light;
(b) a voltage supply having a ramped voltage over time that is applied to a transfer gate;
(c) a charge-to-voltage conversion region for receiving at least a portion of the charge from the photosensitive region in response to the ramped voltage applied to the transfer gate, wherein the charge-to-voltage conversion region converts the charge to a voltage;
(d) an amplifier for receiving and amplifying the voltage received from the charge-to-voltage conversion region;
(e) a comparator for comparing the voltage received from the amplifier to a reference voltage; and
(f) a counter for counting clock cycles between an initial application of the ramped voltage to the transfer gate and the receipt of a signal from the comparator, wherein the signal from the comparator indicates a voltage change at the charge-to-voltage conversion region indicating an initiation of charge transfer from the photosensitive region to the charge-to-voltage conversion region.
2. The image sensor as in claim 1 , wherein the ramped voltage is an increasing voltage over time.
3. The image sensor as in claim 1 further comprising a reset transistor for generating the reference voltage.
4. The image sensor as in claim 1 further comprising a capacitor electrically connected to the comparator for holding the reference voltage.
5. The image sensor as in claim 1 , wherein the photosensitive region is a photodiode.
6. The image sensor as in claim 1 further comprising a row select transistor electrically connected to the amplifier for enabling readout.
7. An imaging device comprising:
(a) a photosensitive region that accumulates charge corresponding to received incident light;
(b) a voltage supply having a ramped voltage over time that is applied to a transfer gate;
(c) a charge-to-voltage conversion region for receiving at least a portion of the charge from the photosensitive region in response to the ramped voltage applied to the transfer gate, wherein the charge-to-voltage conversion region converts the charge to a voltage;
(d) an amplifier for receiving and amplifying the voltage received from the charge-to-voltage conversion region;
(e) a comparator for comparing the voltage received from the amplifier to a reference voltage; and
(f) a counter for counting clock cycles between an initial application of the ramped voltage to the transfer gate and the receipt of a signal from the comparator, wherein the signal from the comparator indicates a voltage change at the charge-to-voltage conversion region indicating an initiation of charge transfer from the photosensitive region to the charge-to-voltage conversion region.
8. The imaging device as in claim 7 , wherein the ramped voltage is an increasing voltage over time.
9. The imaging device as in claim 7 further comprising a reset transistor for generating the reference voltage.
10. The imaging device as in claim 7 further comprising a capacitor electrically connected to the comparator for holding the reference voltage.
11. The imaging device as in claim 7 , wherein the photosensitive region is a photodiode.
12. The imaging device as in claim 7 further comprising a row select transistor electrically connected to the amplifier for enabling readout.
13. A method of operating an image sensor, the method comprising:
accumulating charge corresponding to received incident light by a photosensitive region;
(b) applying a ramped voltage over time to a transfer gate to transfer at least a portion of the charge from the photosensitive region to a charge-to-voltage conversion region;
(c) converting the charge to a voltage;
(d) upon an initial application of the ramped voltage to the transfer gate, beginning a count of clock cycles;
(e) comparing the voltage received from the charge-to-voltage conversion region to a reference voltage to detect a voltage change at the charge-to-voltage conversion region;
(f) upon detection of the voltage change at the charge-to-voltage conversion region, stopping the count of clock cycles; and
(g) outputting a signal representing a number of counted clock cycles.
14. The method as in claim 13 further comprising providing an increasing voltage over time as the ramped voltage.
15. The method as in claim 13 further comprising providing the charge-to-voltage conversion region as a floating diffusion.
16. The method as in claim 13 further comprising providing the photosensitive region as a photodiode.
17. The method as in claim 16 further comprising providing the charge-to-voltage conversion region as a floating diffusion.