Exposure method
An exposure method for exposing a resist film disposed on one surface of a wafer includes a first exposure step of locating an exposure mask at a first predetermined position with respect to the wafer, and exposing the resist film. The exposure method further includes a second exposure step of displacing the exposure mask relative to the wafer by a predetermined dimension in a predetermined direction to locate the exposure mask at a second predetermined position, and exposing the resist film.
1. An exposure method for exposing a resist film disposed on one surface of a wafer, the wafer having a plurality of first cutting streets extending parallel with predetermined spacing, a plurality of second cutting streets extending parallel with predetermined spacing and perpendicularly to the first cutting streets, and a plurality of rectangular regions partitioned by the first cutting streets and the second cutting streets defined on the said one surface thereof, said method comprising:
a providing step of providing an exposure mask;
a first exposure step of locating the exposure mask at a first predetermined position with respect to the wafer, and exposing the resist film through the exposure mask; and
a second exposure step of displacing the exposure mask relative to the wafer by a predetermined dimension in a predetermined direction to locate the exposure mask at a second predetermined position, and exposing the resist film through the exposure mask,
wherein the predetermined dimension is 10 to 50 μm,
wherein the exposure mask has a plurality of first light shielding regions extending parallel with predetermined spacing, a plurality of second light shielding regions extending parallel with predetermined spacing and perpendicularly to the first light shielding regions, and a plurality of rectangular light transmission regions partitioned by the first light shielding regions and the second light shielding regions, and the predetermined direction is a direction of extension of the first light shielding regions,
wherein the first light shielding regions, the second light shielding regions, and the light transmission regions of the exposure mask are in correspondence with the first cutting streets, the second cutting streets, and the rectangular regions of the wafer, and
wherein a width of the second light shielding region is a width of the second cutting street plus the predetermined dimension.