IP Library Granted Patent US 7,731,796
Granted Patent B2
US 7,731,796 · App. 11/362,035 · Granted Jun 8, 2010

Nitrogen semiconductor compound and device fabricated using the same

Assignee: Samsung Electronics Co., Ltd.
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Quick Facts
Patent No.
US 7,731,796
App. No.
11/362,035
Granted
Jun 8, 2010
Kind
B2
Abstract

Disclosed herein are a novel nitrogen semiconductor compound simultaneously including groups with different electrical properties and a device fabricated using the nitrogen semiconductor compound as an organic semiconductor material or a hole conducting material. The nitrogen semiconductor compound can be spin-coated at room temperature when applied to the fabrication of the device, and has superior electrical conductivity and photovoltaic properties.

Claims (13)

1. A nitrogen semiconductor compound represented by Formula 1 below:

wherein A represents an electron acceptor, D represents an electron donor, m and n each is an integer of 1 or greater, and the sum of m and n is 3.

2. The nitrogen semiconductor compound according to claim 1 , wherein the electron acceptor A is represented by any one of Formulae 2 to 4 below:

wherein R 1 , R 2 , R 3 , R 4 , and R 5 are each independently a hydrogen atom, a halogen atom, —CN, a C 1-2 linear or branched alkyl group, a C 1-12 linear or branched alkoxy group, or a C 1-12 linear or branched alkoxyalkyl group, and B 1 and B 2 are each independently

or

one of which may be —O—,

wherein R 1 is as defined in Formula 2, and

wherein R 1 , R 2 , and R 3 are as defined in Formula 2; and the electron donor D is represented by any one of Formulae 5 to 8 below:

wherein R 1 , R 2 , R 3 , R 4 , and R 5 are each independently a hydrogen atom, a C 1-12 linear or branched alkyl group, a C 1-10 linear or branched alkoxy group, or a C 1-10 alkoxyalkyl group,

wherein R 1 , R 2 , R 3 , R 4 , and R 5 are as defined in Formula 5,

wherein R 1 , R 2 , and R 3 are as defined in Formula 5, and

wherein R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , and R 7 are each independently a hydrogen atom, a C 1-12 linear or branched alkyl group, a C 1-10 linear or branched alkoxy group, or a C 1-10 alkoxyalkyl group.

3. The nitrogen semiconductor compound according to claim 1 , wherein the compound of Formula 1 is selected from the group consisting of the compounds of Formulae 9 to 13 below:

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 14, 2011
From: SAMSUNG ELECTRONICS CO., LTD.
To: SAMSUNG SDI CO. LTD.
Reel/Frame 026592/0052 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 25, 2006
From: JUNG, WON CHEOL; RONCALI, JEAN; PARK, SANG CHEOL; CRAVINO, ANTONIO; LERICHE, PHILIPPE; FRERE, PIERRE; ROQUET, SOPHIE
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 017928/0919 →
Priority Claims (1)
KR 10-2005-0089797 · Sep 27, 2005 · national
Continuity (1)
Related Publication 20070068450A1 · Mar 29, 2007