IP Library › Patent Application 11362851
Patent Application
App. No. 11/362,851

Photoelectric conversion element and method for producing photoelectric conversion element

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Quick Facts
Patent No.
US None
App. No.
11/362,851
Abstract

A photoelectric conversion element comprising: a substrate; a conductive layer; a photoelectric conversion layer; and a transparent conductive layer, provided in this order, wherein the transparent conductive layer has a sheet resistance of from 100 to 10000Ω/□.

Claims (13)

1 . A photoelectric conversion element comprising: a substrate; a conductive layer; a photoelectric conversion layer; and a transparent conductive layer, provided in this order, wherein the transparent conductive layer has a sheet resistance of from 100 to 10000Ω/□.

2 . The photoelectric conversion element as claimed in claim 1 , wherein the sheet resistance is from 100 to 3000Ω/□.

3 . The photoelectric conversion element as claimed in claim 1 , wherein the sheet resistance is from 500 to 1000Ω/□.

4 . The photoelectric conversion element as claimed in claim 1 , wherein a transmittance in an incidence wavelength region of from 400 to 700 nm is 85% or more.

5 . The photoelectric conversion element as claimed in claim 2 , wherein a transmittance in an incidence wavelength region of from 400 to 700 nm is 85% or more.

6 . The photoelectric conversion element as claimed in claim 3 , wherein a transmittance in an incidence wavelength region of from 400 to 700 nm is 85% or more.

7 . The photoelectric conversion element as claimed in claim 1 , wherein a transmittance in an incidence wavelength region of from 400 to 700 nm is 90% or more.

8 . The photoelectric conversion element as claimed in claim 2 , wherein a transmittance in an incidence wavelength region of from 400 to 700 nm is 90% or more.

9 . The photoelectric conversion element as claimed in claim 3 , wherein a transmittance in an incidence wavelength region of from 400 to 700 nm is 90% or more.

10 . The photoelectric conversion element as claimed in claim 1 , wherein the transparent conductive layer contains a conductive metal oxide.

11 . The photoelectric conversion element as claimed in claim 1 , wherein the transparent conductive layer contains In 2 O 3 -based material or ZnO-based material.

12 . The photoelectric conversion element as claimed in claim 1 , wherein the transparent conductive layer contains indium tin oxide or indium zinc oxide.

13 . A method for producing a photoelectric conversion element as claimed in claim 1 , wherein the transparent conductive layer is formed by a plasma-free layer-formation method.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 15, 2007
From: FUJIFILM HOLDINGS CORPORATION (FORMERLY FUJI PHOTO FILM CO., LTD.)
To: FUJIFILM CORPORATION
Reel/Frame 018904/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 28, 2006
From: MITSUI, TETSURO
To: FUJI PHOTO FILM CO., LTD.
Reel/Frame 017634/0431 →