High efficiency RF amplifier and envelope modulator
An RFID reader, comprising a high-efficiency Class-C power amplifier having an input, an output, and a supply voltage, a modulator coupled to the supply voltage of the Class-C power amplifier, and an RF carrier signal coupled to the input of the Class-C power amplifier. The modulator changes the supply voltage of the Class-C power amplifier resulting in highly controlled amplitude modulation of the RF carrier signal at the output of the Class-C power amplifier.
1 . An RFID reader, comprising:
a Class-C power amplifier having an input, an output, and a supply voltage;
a modulator coupled to the supply voltage of the Class-C power amplifier; and
an RF carrier signal coupled to the input of the Class-C power amplifier;
wherein the modulator changes the supply voltage of the Class-C power amplifier resulting in highly controlled amplitude modulation of the RF carrier signal at the output of the Class-C power amplifier.
2 . The RFID reader of claim 1 , wherein the input of the Class-C power amplifier includes a high-Q tank circuit.
3 . The RFID reader of claim 1 , wherein the output of the Class-C power amplifier includes a high-Q tank circuit.
4 . The RFID reader of claim 1 , wherein the modulator is a transistor having an emitter-follower configuration.
5 . The RFID reader of claim 4 , wherein an information signal is provided at the base of the emitter-follower configuration, wherein the information signal shapes the RF carrier signal during modulation.
6 . The RFID reader of claim 5 , wherein a supply voltage signal is provided at the collector of the emitter-follower configuration, wherein the supply voltage signal determines an output power of the RFID reader.
7 . The RFID reader of claim 1 , wherein the modulator is a transistor having a source-follower configuration.
8 . The RFID reader of claim 1 , wherein a DC bias voltage is set by a digital or analog potentiometer in order to operate in Class-C mode.
9 . The RFID reader of claim 1 , further comprising an inverter at the input of the Class-C power amplifier for hard-switching a phase of the RF carrier signal between 0 and 180 degrees at the same time as performing amplitude modulation resulting in phase-reversal amplitude shift keying (PRASK) modulation at the output of the Class-C power amplifier.
10 . The RFID reader of claim 1 , wherein the Class-C power amplifier is suitable for use in Power over Ethernet (PoE) applications.
11 . A method for use in an RFID reader, the method comprising:
providing an information signal for modulation;
providing an RF carrier signal to an input of a power amplifier;
setting a DC bias voltage so that the power amplifier is operating in Class-C mode; and
changing a supply voltage of the power amplifier with the information signal resulting in highly controlled amplitude modulation of the RF carrier signal at an output of the power amplifier.
12 . The method of claim 11 , further comprising inverting the carrier signal back and forth while at the same time performing amplitude modulation resulting in phase-reversal amplitude shift keying (PRASK) modulation at the output of the power amplifier.
13 . The method of claim 11 , further comprising tuning and impedance matching the input and output of the power amplifier with high-Q tank circuits.
14 . The method of claim 11 , wherein changing the supply voltage of the power amplifier includes configuring a transistor with an emitter-follower circuit and driving the transistor with the information signal.
15 . The method of claim 14 , further comprising providing a supply voltage signal to the collector of the emitter-follower circuit for setting a power output of the RFID reader.
16 . The method of claim 11 , further comprising pre-distorting the information signal so that the resulting amplitude modulation is a linear operation.
17 . An RFID reader, comprising:
a transmitter having a Class-C power amplifier with an input, an output, a supply voltage;
a transistor having an emitter-follower configuration coupled to the supply voltage of the Class-C power amplifier;
an RF carrier signal generator coupled to the input of the amplifier; and
a digital signal processor or controller generating an information signal;
wherein the information signal drives the transistor resulting in highly controlled amplitude modulation at the output of the Class-C power amplifier.
18 . The RFID reader of claim 17 , wherein the input and output include high-Q tank circuits.
19 . The RFID reader of claim 17 , wherein the transmitter is suitable for use in Power over Ethernet (PoE) applications.
20 . The RFID reader of claim 17 , wherein the digital signal processor or controller generates a supply voltage signal that is coupled to the collector of the emitter-follower configuration, wherein the supply voltage signal allows the digital signal processor to set a power setting for the RFID reader.