IP Library Granted Patent US 7,254,082
Granted Patent B2
US 7,254,082 · App. 11/363,060 · Granted Aug 7, 2007

Semiconductor device

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Quick Facts
Patent No.
US 7,254,082
App. No.
11/363,060
Granted
Aug 7, 2007
Kind
B2
Abstract

When a leakage current of a circuit block under a non-use state is reduced by means of a power switch, frequent ON/OFF operations of the switch within a short time invite an increase of consumed power, on the contrary. Because a pre-heating time is necessary from turn-on of the switch till the circuit block becomes usable, control of the switch during an operation deteriorates a processing time of a semiconductor device. The switch is ON/OFF-controlled with a task duration time of a CPU core for controlling logic circuits and memory cores as a unit. After the switch is turned off, the switch is again turned on before termination of the task in consideration of the pre-heating time.

Claims (39)

1. A semiconductor device comprising:

a power source line;

a first circuit block;

a switching element which controls electrical connection and disconnection between said power source line and at least a part of said first circuit block, wherein

said first circuit block includes

a logic circuit;

a flip-flop circuit which is controlled by a clock signal so as to latch an input signal to said logic circuit; and

a first gate circuit which controls the clock signal so as to input or not input said clock signal to said flip-flop circuit, and wherein

said semiconductor device has periods of states including:

a first state in which said logic circuit is connected to said power source line by said switching element and said clock signal is allowed to be inputted to said flip-flop by said first gate circuit;

a second state in which said logic circuit is disconnected from said power source line by said switching element and said clock signal is not allowed to be inputted to said flip-flop by said first gate circuit; and

a third state in which said logic circuit is connected to said power source line by said switching element and said clock signal is not allowed to be inputted to said flip-flop by said first gate circuit.

2. A semiconductor device according to claim 1 , wherein said first circuit block has means for maintaining a voltage potential at the output of said first circuit block, and the voltage potential at the output of said first circuit block is maintained at a certain level by said means for maintaining a voltage potential during said second state.

3. A semiconductor device according to claim 1 , wherein said first circuit block transfers to the third period of state from the second state, and then transfers to the first state.

4. A semiconductor device according to claim 2 , wherein said first circuit block transfers to the third state from the second state, and then transfers to the first state.

5. A semiconductor device comprising:

a power line;

first and second circuit blocks;

a first switching element which controls electrical connection and disconnection between said power source line and at least a part of said first circuit block; and

a second switching element which controls electrical connection and disconnection between said power source line and at least a part of said second circuit block, wherein

each of said first and second circuit blocks includes:

a logic circuit;

a flip-flop circuit which is controlled by a clock signal so as to latch an input signal to said logic circuit and

a first gate circuit which controls the clock signal so as to input or not input said clock signal to said flip-flop circuit, wherein

said semiconductor device has a period of a state in which

said logic circuit in the second circuit block is connected to said power source line by said second switching element and said clock signal is not allowed to be inputted to said flip-flop by said first gate circuit in the second circuit block, and wherein during at least a part of said period of said state said logic circuit in the first circuit block is connected to said power source line by said first switching element and said clock signal is allowed to be inputted to said flip-flop by said first gate circuit in the first circuit block.

6. A semiconductor device comprising:

a power source line;

a plurality of circuit blocks;

switching elements which control electrical connection and disconnection between said power source line and at least a part of each of said circuit blocks, wherein

each said circuit block includes

a logic circuit;

a flip-flop circuit which is controlled by a clock signal so as to latch an input signal to said logic circuit; and

a first gate circuit which controls the clock signal so as to input or not input said clock signal to said flip-flop circuit, wherein

said semiconductor device has periods of states including:

a first state in which said logic circuit is connected to said power source line by said switching element and said clock signal is allowed to be inputted to said flip-flop by said first gate circuit;

a second state in which said logic circuit is disconnected from said power source line by said switching element and said clock signal is not allowed to be inputted to said flip-flop by said first gate circuit; and

a third state in which said logic circuit is connected to said power source line by said switching element and said clock signal is not allowed to be inputted to said flip-flop by said first gate circuit, and wherein

said plurality of blocks have different said periods of respective ones of said first, second and third states.

Assignments (3)
CHANGE OF ADDRESS Recorded Nov 29, 2017
From: RENESAS ELECTRONICS CORPORATION
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 044928/0001 →
MERGER AND CHANGE OF NAME Recorded May 17, 2011
From: RENESAS TECHNOLOGY CORP.
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 026287/0075 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 26, 2007
From: HITACHI, LTD.
To: RENESAS TECHNOLOGY CORP.
Reel/Frame 019881/0288 →