Semiconductor device, testing and manufacturing methods thereof
View Patent ↗In order to easily perform a timing test on a memory interface included in a semiconductor device so as to satisfy a restriction on latency, the present invention provides a semiconductor device with the memory interface including: a clock output terminal that outputs a clock signal associated with an operation of a memory connected to the memory interface; a command terminal that outputs a command signal associated with control of a state of the memory; a data terminal that exchanges a data signal with the memory; and a data strobe terminal that exchanges a data strobe signal for establishing the data signal. This semiconductor device includes a testing terminal that outputs in advance a signal for starting a test on the memory interface apart from the command signal.
1. A semiconductor device with a control function of a Double Data Rate (DDR) memory, the device comprising:
a memory interface connectable to a DDR memory and including
(i) a clock output terminal that outputs a single or differential clock,
(ii) a data transceiving terminal that can transfer and receive data, and
(iii) a first command output terminal that controls data writing and data reading to a DDR memory; and
a memory interface test start signal output terminal that outputs, at an independent timing from a command signal outputted from the first command output terminal, a memory interface test start signal corresponding to the command signal,
wherein, at a time of testing the memory interface, the first command output terminal does not output a signal, and the memory interface test start output terminal outputs the memory interface test start signal.
2. The semiconductor device according to claim 1 ,
wherein the timing of the signal outputted at the memory interface test start signal output terminal is earlier than the signal outputted at the first command output terminal.
3. The semiconductor device according to claim 2 ,
wherein, at a time of a test on the interface connectable with the DDR memory, a signal corresponding to the command signal is outputted from the memory interface test start signal output terminal.
4. The semiconductor device according to claim 2 ,
wherein the interface connectable with the DDR memory further includes a data strobe input/output terminal that transfers and receives a signal for determining data timing from the data transceiving terminal.
5. The semiconductor device according to claim 1 ,
wherein, at a time of a test on the interface connectable with the DDR memory, a signal corresponding to the command signal is outputted from the memory interface test start signal output terminal.
6. The semiconductor device according to claim 1 ,
wherein the interface connectable with the DDR memory further includes a data strobe input/output terminal that transfers and receives a signal for determining data timing from the data transceiving terminal.
7. A method of testing a semiconductor device with a control function of a Double Data Rate (DOR) memory and a DDR memory interface,
wherein the DDR memory interface includes: a clock output terminal that outputs a single or differential clock; a data transceiving terminal that can transfer and receive data; and a first command output terminal that controls data writing and data reading to a DDR memory,
wherein, in a first mode in which a memory write command is outputted from the first command output terminal and a signal about memory writing is outputted from the data transceiving terminal, a signal outputted from a second command terminal that outputs a signal corresponding to the command signal, at a different timing than a command signal from the first command output terminal, is received, thereby performing a test on the DDR memory interface, and
wherein, without using or outputting an output signal of the first command output terminal, the test on the DDR memory interface is performed by an output signal of the second command input signal.
8. The method of testing a semiconductor device according to claim 7 ,
wherein the memory interface having a control function of a DDR memory of the semiconductor device further includes a data strobe terminal that exchanges a data strobe signal for establishing timings of input and output of the data, and
in a configuration in which a testing circuit is connected to the semiconductor device, the method further comprising the steps of:
outputting, from the semiconductor device, a test signal from the second command output terminal at timing in which a restriction on latency is satisfied;
receiving, by the testing circuit, the signal outputted from the second command terminal, and outputting the data signal and the data strobe signal, which correspond to read data, to the semiconductor device; and
receiving, by the semiconductor device, the data signal and the data strobe signal from the testing circuit, and capturing the read data from the data signal in accordance with the data strobe signal.
9. The method of testing a semiconductor device according to claim 7 ,
wherein in a configuration in which a testing circuit, which is connected to the semiconductor device and performs a test of the memory interface, and a semiconductor testing device, different from the testing circuit, which are connected,
a command terminal for testing is provided between the semiconductor testing device and the testing circuit, the command terminal for testing transmits to the testing circuit, at an independent timing from a command signal outputted from the first command output terminal, a signal corresponding to the command signal, and
the testing circuit, upon receiving the signal, performs a test on the memory interface of the semiconductor device.
10. A method of testing a semiconductor device according to claim 9 ,
wherein, at a time of a test on the interface connectable with the DDR memory, a signal corresponding to the command signal is outputted from the command terminal for testing.
11. A method of testing a semiconductor device with a control function of a Double Data Rate (DDR) memory and a DDR memory interface including a clock output terminal that outputs a single or differential clock, a data transceiving terminal that can transfer and receive data, and a first command output terminal that controls data writing and data reading to a DDR memory, the method comprising the steps of:
in a second mode in which a memory read command is outputted from the first command output terminal and a signal about memory reading is inputted by the data transceiving terminal,
a signal outputted from a second command terminal that outputs a signal corresponding to the command signal, at a different timing than a command signal from the first command output terminal, is received, thereby performing a test on the DDR memory interface,
wherein, without using or outputting an output signal of the first command output terminal, the test on the DDR memory interface is performed by an output signal of the second command input signal.
12. The method of testing a semiconductor device according to claim 11 ,
wherein the memory interface having a control function of a DDR memory of the semiconductor device further includes a data strobe terminal that exchanges a data strobe signal for establishing timings of input and output of the data, and
in a configuration in which a testing circuit is connected to the semiconductor device, the method further comprising the steps of:
outputting, from the semiconductor device, a test signal from the second command output terminal at timing in which a restriction on latency is satisfied;
receiving, by the testing circuit, the signal outputted from the second command terminal, and outputting the data signal and the data strobe signal, which correspond to read data, to the semiconductor device; and
receiving, by the semiconductor device, the data signal and the data strobe signal from the testing circuit, and capturing the read data from the data signal in accordance with the data strobe signal.