IP Library Granted Patent US 7,531,372
Granted Patent B2
US 7,531,372 · App. 11/367,363 · Granted May 12, 2009

Method for manufacturing array substrate for liquid crystal display device

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 7,531,372
App. No.
11/367,363
Granted
May 12, 2009
Kind
B2
Abstract

A method of fabricating an array substrate includes forming a buffer layer on a metal substrate, forming a thin film transistor including a gate electrode, a source electrode and a drain electrode on the buffer layer, forming a pixel electrode contacting the drain electrode, removing the metal substrate to expose a lower surface of the buffer layer, and forming a plastic material beneath the buffer layer such that the plastic material contacts the exposed lower surface of the buffer layer.

Claims (13)

1. A method of fabricating an array substrate, comprising the steps of:

forming a buffer layer on a metal substrate;

forming a thin film transistor including a gate electrode, a source electrode and a drain electrode on the buffer layer;

forming a pixel electrode contacting the drain electrode;

removing the metal substrate to expose a lower surface of the buffer layer; and

forming a plastic material beneath the buffer layer such that the plastic material contacts the exposed lower surface of the buffer layer.

2. The method according to claim 1 , wherein the substrate is removed by an etchant.

3. The method according to claim 1 , wherein the step of forming a plastic material includes at least using a roller to apply the plastic material to the buffer layer.

4. The method according to claim 1 , wherein the buffer layer includes at least one of silicon oxide (SiO 2 ) and silicon nitride (SiN x ).

5. The method according to claim 1 , wherein the gate electrode includes at least one of aluminum (Al), aluminum alloy, molybdenum (Mo), and tungsten (W).

6. The method according to claim 1 , wherein the source and drain electrodes include at least one of molybdenum (Mo), tungsten (W), chromium (Cr), and an aluminum alloy.

7. The method according to claim 1 , wherein the pixel electrode includes at least one of indium-tin-oxide (ITO) and indium-zinc-oxide (IZO).

8. The method according to claim 1 , wherein the plastic material includes at least one of polycarbonate (PC) and polystyrene.

Assignments (1)
CHANGE OF NAME Recorded Jun 19, 2008
From: LG.PHILIPS LCD CO., LTD.
To: LG DISPLAY CO., LTD.
Reel/Frame 021147/0009 →