Process for producing Bi
View Patent ↗An alkaline solution of an alkali-soluble compound, which is selected from the group consisting of an alkali-soluble silicon compound and an alkali-soluble germanium compound, is prepared. Also, a water-soluble bismuth compound solution is prepared. The alkaline solution and the water-soluble bismuth compound solution are subjected to mixing processing with agitation at a temperature of at least 80° C. by use of a shearing type agitator and are thereby allowed to react with each other. Thus Bi 12 MO 20 particles, in which M represents an element selected from the group consisting of Si and Ge, are produced. The produced Bi 12 MO 20 particles have small particle diameters and uniform composition.
1. A process for producing Bi 12 MO 20 particles, in which M represents an element selected from the group consisting of Si and Ge, the process comprising the steps of:
i) preparing an alkaline solution of an alkali-soluble compound, which is selected from the group consisting of an alkali-soluble silicon compound and an alkali-soluble germanium compound,
ii) preparing a water-soluble bismuth compound solution, and
iii) subjecting the alkaline solution and the water-soluble bismuth compound solution to mixing processing with agitation at a temperature of at least 80° C. by use of a shearing agitator comprising a rotating blade and a stator,
whereby the alkaline solution and the water-soluble bismuth compound solution are allowed to react with each other;
wherein the mixing processing with agitation is performed while each of the alkaline solution and the water-soluble bismuth compound solution is being added at a certain feed rate to an alkaline mother liquor having been heated to a temperature of at least 80° C.
2. A process as defined in claim 1 wherein a circumferential speed of an agitating blade of the shearing agitator is at least 3 in/sec.
3. A process as defined in claim 1 wherein the alkaline mother liquor contains at least one kind of compound selected from the group consisting of LiOH, NaOH, KOH, RbOH, and NR 4 OH, in which R represents an alkyl group selected from the group consisting of alkyl groups having one to three carbon atoms.
4. A process as defined in claim 3 wherein the water-soluble bismuth compound contained in the water-soluble bismuth compound solution is at least one kind of compound selected from the group consisting of bismuth nitrate, bismuth trichloride, and bismuth tribromide.
5. A process as defined in claim 3 wherein the alkali-soluble silicon compound is selected from the group consisting of an alkali metal silicate and a quaternary ammonium silicate.
6. A process as defined in claim 4 wherein the alkali-soluble silicon compound is selected from the group consisting of an alkali metal silicate and a quaternary ammonium silicate.
7. A process as defined in claim 3 wherein the alkali-soluble germanium compound is selected from the group consisting of an alkali metal germanate and a quaternary ammonium germanate.
8. A process as defined in claim 4 wherein the alkali-soluble germanium compound is selected from the group consisting of an alkali metal germanate and a quaternary ammonium germanate.
9. A photo-conductor layer for constituting a radiation imaging panel, which photo-conductor layer is capable of recording radiation image information as an electrostatic latent image,
wherein the photo-conductor layer is produced by use of Bi 12 MO 20 particles, which have been obtained with a process as defined in claim 1 .
10. A photo-conductor layer for constituting a radiation imaging panel, which photo-conductor layer is capable of recording radiation image information as an electrostatic latent image,
wherein the photo-conductor layer is produced by use of Bi 12 MO 20 particles, which have been obtained with a process as defined in claim 2 .
11. A photo-conductor layer for constituting a radiation imaging panel, which photo-conductor layer is capable of recording radiation image information as an electrostatic latent image,
wherein the photo-conductor layer is produced by use of Bi 12 MO 20 particles, which have been obtained with a process as defined in claim 3 .
12. A photo-conductor layer for constituting a radiation imaging panel, which photo-conductor layer is capable of recording radiation image information as an electrostatic latent image,
wherein the photo-conductor layer is produced by use of Bi 12 MO 20 particles, which have been obtained with a process as defined in claim 4 .
13. A photo-conductor layer for constituting a radiation imaging panel, which photo-conductor layer is capable of recording radiation image information as an electrostatic latent image,
wherein the photo-conductor layer is produced by use of Bi 12 MO 20 particles, which have been obtained with a process as defined in claim 5 .
14. A photo-conductor layer for constituting a radiation imaging panel, which photo-conductor layer is capable of recording radiation image information as an electrostatic latent image,
wherein the photo-conductor layer is produced by use of Bi 12 MO 20 particles, which have been obtained with a process as defined in claim 6 .
15. A photo-conductor layer for constituting a radiation imaging panel, which photo-conductor layer is capable of recording radiation image information as an electrostatic latent image,
wherein the photo-conductor layer is produced by use of Bi 12 MO 20 particles, which have been obtained with a process as defined in claim 7 .
16. A photo-conductor layer for constituting a radiation imaging panel, which photo-conductor layer is capable of recording radiation image information as an electrostatic latent image,
wherein the photo-conductor layer is produced by use of Bi 12 MO 20 particles, which have been obtained with a process as defined in claim 8 .
17. A process as defined in claim 1 wherein the temperature when the alkaline solution and the water-soluble bismuth compound solution are subjected to mixing processing with agitation is at least 90° C., and the temperature to which the alkaline mother liquor has been heated is at least 90° C.