Method for manufacturing an organic semiconductor device, as well as organic semiconductor device, electronic device, and electronic apparatus

1. A method for manufacturing an organic semiconductor device having a gate electrode, a source electrode, a drain electrode, an organic semiconductor layer, a gate insulation layer, and a substrate, comprising:

forming, on the substrate, an underlayer that contains an organic polymer material having a liquid crystal core and is oriented in a specific direction, before forming the organic semiconductor layer; and

forming the organic semiconductor layer so as to orient the organic semiconductor layer along the orientation of the underlayer,

wherein: the gate insulation layer insulates the source electrode and the drain electrode from the gate electrode; and

the substrate supports the gate electrode, the source electrode, the drain electrode, the organic semiconductor layer, and the gate insulation layer.

2. The method for manufacturing an organic semiconductor device according to claim 1 , further comprising:

forming the source electrode and the drain electrode on the underlayer before forming the organic semiconductor layer; and

forming the organic semiconductor layer with part of the organic semiconductor layer contacting the underlayer so as to orient the organic semiconductor layer along the orientation of the underlayer.

3. The method for manufacturing an organic semiconductor device according to claim 1 , further comprising:

forming the gate electrode on the underlayer before forming the organic semiconductor layer;

forming the gate insulation layer with part of the gate insulation layer contacting the underlayer so as to orient the gate insulation layer along the orientation of the underlayer; and

forming the organic semiconductor layer so as to orient the organic semiconductor layer along the orientation of the gate insulation layer.

4. The method for manufacturing an organic semiconductor device according to claim 3 , further comprising:

forming the source electrode and the drain electrode on the gate insulation layer before forming the organic semiconductor layer; and

forming the organic semiconductor layer with part of the organic semiconductor layer contacting the gate insulation layer so as to orient the organic semiconductor layer along the orientation of the gate insulation layer.

5. The method for manufacturing an organic semiconductor device according to claim 3 , wherein a material configuring the underlayer and a material configuring the gate insulation layer are same.

6. The method for manufacturing an organic semiconductor device according to claim 1 , wherein the source electrode and the drain electrode are formed along a specific direction with an interval in between.

7. The method for manufacturing an organic semiconductor device according to claim 1 , wherein the underlayer is formed after performing an orientation processing of the substrate.

8. The method for manufacturing an organic semiconductor device according to claim 7 , wherein the orientation processing is performed by means of rubbing.

9. The method for manufacturing an organic semiconductor device according to claim 1 , wherein the underlayer is formed by polymerizing a compound containing at least a single or two or more organic low-molecular materials having a polymeric group and a liquid crystal core.

10. The method for manufacturing an organic semiconductor device according to claim 9 , wherein the compound shows a liquid crystal phase under room temperature.

11. The method for manufacturing an organic semiconductor device according to claim 10 , wherein the compound has a nematic phase.

12. The method for manufacturing an organic semiconductor device according to claim 10 , wherein the compound has a smectic phase.