Liquid crystal display device and method of fabricating the same
View Patent ↗A liquid crystal display (LCD) device is disclosed, in which a plurality of spacers are formed around one corresponding projection as the same size and spaced apart from each other, to prevent the deformation of column spacers and to prevent the touch defect, the LCD device including first and second substrates facing each other; gate and data lines crossing each other to define a unit pixel region on the first substrate; a thin film transistor at a crossing area of the gate and data lines; a projection on the predetermined portion of the gate line; a plurality of column spacers overlapped with the predetermined portions of the projection and provided on the second substrate at regular intervals; and a liquid crystal layer between the first and second substrates.
1. A liquid crystal display device comprising:
first and second substrates facing each other;
gate and data lines crossing each other to define a unit pixel region on the first substrate;
a thin film transistor adjacent to a crossing of the gate and data lines;
an insulating layer on the gate line;
a protrusion over the insulating layer on the first substrate;
a plurality of column spacers on the second substrate surrounding peripheral corners of the protrusion, wherein each column spacer are partially overlapping the protrusion with same area as each other, the column spacers are equidistant from a center of the protrusion and the column spacers symmetrically conform to the corner of the protrusion; and
a liquid crystal layer between the first and second substrates.
2. The LCD device of claim 1 , wherein each of the plurality of column spacers has a top surface with a polygonal shape.
3. The LCD device of claim 1 , wherein each of the plurality of column spacers has a top surface with a circular shape.
4. The LCD device of claim 1 , wherein the protrusion has a top surface with a polygonal shape.
5. The LCD device of claim 1 , wherein the protrusion has a top surface with a circular shape.
6. The LCD device of claim 1 , wherein the thin film transistor includes:
a gate electrode protruding from the gate line;
a source electrode protruding from the data line;
a drain electrode formed in the same layer as the source electrode at an interval from the source electrode; and
a semiconductor layer partially overlapping the source and drain electrodes above the gate electrode.
7. The LCD device of claim 6 , wherein the protrusion is formed of the same layer as the semiconductor layer.
8. The LCD device of claim 6 , wherein the protrusion is formed of the same layer as the source and drain electrodes.
9. The LCD device of claim 6 , wherein the protrusion is a stacked structure including a semiconductor layer pattern formed of the same layer as the semiconductor layer, and a source/drain electrode layer formed of the same layer as the source and drain electrodes.
10. A liquid crystal display device comprising:
first and second substrates facing each other;
gate and data lines crossing each other to define a unit pixel region on the first substrate;
a thin film transistor adjacent to a crossing of the gate and data lines;
a protrusion over a portion of the gate line on the first substrate;
a plurality of column spacers on the second substrate surrounding peripheral corners of one protrusion, wherein each column spacer is partially overlapping the one protrusion with same area as each other, and the column spacers are equidistant from a center of the one protrusion and the column spacers symmetrically conform to the corner of the protrusion; and
a liquid crystal layer between the first and second substrates.
11. The LCD device of claim 10 , wherein each of the plurality of column spacers has a top surface with a polygonal shape.
12. The LCD device of claim 10 , wherein each of the plurality of column spacers has a top surface with a circular shape.
13. The LCD device of claim 10 , wherein the protrusion has a top surface with a polygonal shape.
14. The LCD device of claim 10 , wherein the protrusion has a top surface with a circular shape.
15. The LCD device of claim 10 , wherein the thin film transistor includes:
a gate electrode protruding from the gate line;
a source electrode protruding from the data line;
a drain electrode formed in the same layer as the source electrode at an interval from the source electrode; and
a semiconductor layer partially overlapping the source and drain electrodes above the gate electrode.
16. The LCD device of claim 15 , wherein the protrusion is formed of the same layer as the semiconductor layer.
17. The LCD device of claim 15 , wherein the protrusion is formed of the same layer as the source and drain electrodes.
18. The LCD device of claim 15 , wherein the protrusion is a stacked structure including a semiconductor layer pattern formed of the same layer as the semiconductor layer, and a source/drain electrode layer formed of the same layer as the source and drain electrodes.
19. A method of fabricating a liquid crystal display device having first and second substrates facing each other, comprising:
forming gate and data lines crossing each other to define a unit pixel region on the first substrate;
forming a thin film transistor adjacent to a crossing of the gate and data lines;
forming a protrusion over a portion of the gate line on the first substrate;
forming a plurality of column spacers on the second substrate surrounding peripheral corners of one protrusion, wherein each column spacer is partially overlapping the one protrusion with same area as each other, and the column spacers are equidistant from a center of the one protrusion and the column spacers symmetrically conform to the corner of the protrusion; and
forming a liquid crystal layer between the first and second substrates.
20. The method of claim 19 , wherein each of the plurality of column spacers has a top surface with a polygonal shape.
21. The method of claim 19 , wherein each of the plurality of column spacers has a top surface with a circular shape.
22. The method of claim 19 , wherein the forming the thin film transistor includes:
forming a gate electrode protruding from the gate line;
forming a source electrode protruding from the data line;
forming a drain electrode in the same layer as the source electrode at an interval from the source electrode; and
forming a semiconductor layer partially overlapping the source and drain electrodes above the gate electrode.
23. The method of claim 19 , wherein the protrusion is formed of the same layer as the semiconductor layer.
24. The method of claim 19 , wherein the protrusion is formed of the same layer as the source and drain electrodes.
25. The method of claim 19 , wherein the protrusion is a stacked structure including a semiconductor layer pattern formed of the same layer as the semiconductor layer, and a source/drain electrode layer formed of the same layer as the source and drain electrodes.
26. The method of claim 19 , wherein the protrusion has a top surface with a polygonal shape.
27. The method of claim 19 , wherein the protrusion has a top surface with a circular shape.