Semiconductor device and designing method for the same
View Patent ↗A semiconductor device has a semiconductor circuit provided on a semiconductor substrate. The semiconductor circuit has a source, a drain, a gate and a wiring connected to one of the source, the drain and the gate. Conductors for electrostatic discharge protection are connected to one of a ground line and a power supply line and are disposed over a region of the semiconductor circuit not occupied by the wiring. A ratio of a total area of the conductors disposed over the semiconductor circuit to an area of a chip occupied by the semiconductor circuit is 40% or more.
1. A semiconductor device, comprising:
a semiconductor circuit provided on a semiconductor substrate, the semiconductor circuit having a source, a drain, a gate and a wiring connected to one of the source, the drain and the gate; and
a plurality of conductors for electrostatic discharge protection connected to one of a ground line and a power supply line and disposed over a region of the semiconductor circuit not occupied by the wiring, a ratio of a total area of the conductors disposed over the semiconductor circuit to an area of a chip occupied by the semiconductor circuit being 40% or more.
2. A semiconductor device according to claim 1 ; wherein the conductors are made of a metal.
3. A semiconductor device according to claim 2 ; wherein the metal of the conductors is formed simultaneously with a metal that constitutes the wiring of the semiconductor circuit.
4. A semiconductor device according to claim 1 ; wherein some of the conductors are connected to the power supply line and the rest of the conductors are connected to the ground line.
5. A semiconductor device according to claim 1 ; wherein the wiring of the semiconductor circuit and the conductors are made of a same metal layer.
6. A semiconductor device comprising:
a semiconductor substrate;
a semiconductor circuit disposed on the semiconductor substrate, the semiconductor circuit having a source, a drain, a gate and a plurality of wirings each connected to a respective one of the source, the drain and the gate;
a ground line;
a power supply line; and
a plurality of conductors that provide electrostatic discharge protection and are disposed over a region of the semiconductor circuit not occupied by the wirings thereof, some of the conductors being connected to the ground line and the rest of the conductors being connected to the power supply line.
7. A semiconductor device according to claim 6 ; wherein a ratio of a total area of the conductors disposed over the semiconductor circuit to an area of a chip occupied by the semiconductor circuit is 40% or more.
8. A semiconductor device according to claim 6 ; wherein the conductors are made of a metal.
9. A semiconductor device according to claim 8 ; wherein the metal of the conductors is formed simultaneously with a metal that constitutes the wirings of the semiconductor circuit.
10. A semiconductor device according to claim 6 ; wherein the wirings of the semiconductor circuit and the conductors are made of a same metal layer.