Leakage barrier for GaN based HEMT active device
View Patent ↗An improved HEMT formed from a GaN material system is disclosed which has reduced gate leakage current relative to known GaN based HEMTs and eliminates the problem of current constrictions resulting from deposition of the gate metal over the step discontinuities formed over the gate mesa. The HEMT device is formed from a GaN material system. One or more GaN based materials are layered and etched to form a gate mesa with step discontinuities defining source and drain regions. In order to reduce the leakage current, the step discontinuities are back-filled with an insulating material, such as silicon nitride (SiN), forming a flat surface relative to the source and drain regions, to enable to the gate metal to lay flat. By back-filling the source and drain regions with an insulating material, leakage currents between the gate and source and the gate and drain are greatly reduced. In addition, current constrictions resulting from the deposition of the gate metal over a step discontinuity are virtually eliminated.
1. A high electron mobility transistor (HEMT) comprising:
a substrate;
a mesa formed on a portion of said substrate with one or more GaN materials to form a planar top of said mesa and exposed portions of said substrate adjacent opposing sides of said mesa, said mesa defining vertical sidewalls and forming steps on opposing sides of said mesa;
a single layer of an insulating material disposed on said exposed portions of the vertical sidewalls of said substrate, said insulating material flush with the top of the mesa and flush with said vertical sidewalls;
a gate metal contact having a planar bottom surface disposed on a portion of said planar top of the mesa; and
single material source and drain contacts each having planar bottom surfaces that are in contact with and overlap a portion of said insulation that is flush with the top of the mesa, and also are in contact with and reside on said planar top of the mesa.
2. The HEMT as recited in claim 1 , wherein said GaN based material includes bulk GaN.
3. The HEMT as recited in claim 1 , wherein said GaN based material includes GaN and AlGaN.
4. The HEMT as recited claim 3 , wherein said HEMT includes:
a GaN layer formed on said substrate;
a buffer layer formed from AlGaN formed on said GaN layer; and
a GaN formed on top of said buffer layer.
5. The HEMT as recited in claim 1 , wherein said insulating material is SiN.
6. The HEMT as recited in claim 1 wherein said gate metal contact consists of a single conductive material.
7. The HEMT as recited in claim 1 wherein the planar bottom surface of the metal gate contact and the planar bottom surfaces of the source and drain contacts all share a common plane.
8. The HEMT as recited in claim 1 wherein a portion of the planar bottom surface of the metal gate contact is in contact with and overlaps a portion of said insulation that is flush with the top of the mesa.
9. The HEMT as recited in claim 8 wherein the portion of the planar bottom surface of the metal gate contact that overlaps a portion of said insulation does not extend to the outside edge of the insulation.
10. The HEMT as recited in claim 1 wherein at least a portion of each of the source and drain contacts extends to and terminates at the outside edge of the insulation that is flush with the top of the mesa.
11. A high electron mobility transistor (HEMT) comprising:
a substrate;
a mesa formed on a portion of said substrate with one or more GaN materials to form a planar top of said mesa and exposed portions of said substrate adjacent opposing sides of said mesa, said mesa defining vertical sidewalls and forming steps on opposing sides of said mesa;
a single insulating material disposed on said exposed portions of the vertical sidewalls of said substrate, said insulating material flush with the top of the mesa and flush with said vertical sidewalls;
a gate metal contact having a planar bottom surface disposed on a portion of said planar top of the mesa, a portion of the planar bottom surface of the metal gate contact being in contact with and overlapping said insulation that is flush with the top of the mesa; and
source and drain contacts each having planar bottom surfaces that are in contact with and overlap a portion of said insulation that is flush with the top of the mesa, and that also are in contact with and reside on said planar top of the mesa.
12. The HEMT as recited in claim 11 wherein the portion of the planar bottom surface of the metal gate contact that overlaps a portion of said insulation does not extend to the outside edge of the insulation.
13. The HEMT as recited in claim 11 wherein at least a portion of each of the source and drain contacts extends to and terminates at the outside edge of the insulation that is flush with the top of the mesa.