IP Library Granted Patent US 7,534,292
Granted Patent B2
US 7,534,292 · App. 11/376,218 · Granted May 19, 2009

Film-forming composition, insulating film obtained from the composition and electronic device having the same

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Quick Facts
Patent No.
US 7,534,292
App. No.
11/376,218
Granted
May 19, 2009
Kind
B2
Abstract

A film-forming composition comprising: a compound having a cage structure; and a silicon-containing surfactant; an insulating film formed by using the composition; and further, an electronic device comprising the insulating film.

Claims (24)

1. An insulating film-forming composition comprising:

a compound having a cage structure; and

a silicon-containing surfactant;

wherein the cage structure is a diamantane structure and the compound having a cage structure is a polymer of at least one compound represented by formula (I):

wherein R represents a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, an aryl group or a silyl group;

m represents an integer of from 1 to 14;

X represents a halogen atom, an alkyl group, an alkenyl group, an aryl group or a silyl group; and

n represents an integer of from 0 to 13.

2. The insulating film-forming composition according to claim 1 ,

wherein a ratio of all carbon atoms of the cage structure to all carbon atoms of a total solid content of the film-forming composition is 30% or more.

3. The insulating film-forming composition according to claim 1 ,

wherein the compound having a cage structure is a compound that does not contain a nitrogen atom.

4. The insulating film-forming composition according to claim 1 ,

wherein an amount of the silicon-containing surfactant is from 0.01 to 1% by weight based on a total weight of the film-forming composition.

5. The insulating film-forming composition according to claim 4 ,

wherein an amount of the silicon-containing surfactant is from 0.1 to 0.5% by weight based on a total weight of the film-forming composition.

6. The insulating film-forming composition according to claim 1 ,

wherein the silicon-containing surfactant contains an alkylene oxide structure and a dimethylsiloxane structure.

7. The insulating film-forming composition according to claim 1 , which further comprises an organic solvent.

8. An electronic device comprising an insulating film according to claim 1 .

9. An insulating film-forming composition comprising:

a compound having a cage structure; and

a silicon-containing surfactant,

wherein the cage structure is a diamantane structure; the diamantane structure is a polymer; and the diamantane structures are connected by at least one connecting group selected from the group consisting of —CH═CH—, —C≡C—, —O—, —Si(R 16 )(R 17 )— or a group as a combination thereof.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 15, 2007
From: FUJIFILM HOLDINGS CORPORATION (FORMERLY FUJI PHOTO FILM CO., LTD.)
To: FUJIFILM CORPORATION
Reel/Frame 018904/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 16, 2006
From: TAKAHASHI, KAZUTAKA; WATANABE, KATSUYUKI
To: FUJI PHOTO FILM CO., LTD.
Reel/Frame 017690/0946 →