Photoelectric conversion layer stack type color solid-state image sensing device

1. A solid-state image sensing device comprising:

a silicon substrate;

a photoelectric conversion layer provided for absorbing a green light component to generate optical charge; and

photodiodes provided in a shallow portion and in a deep portion respectively in a depth direction of the silicon substrate so that light entering the silicon substrate is separated into a blue light component and a red light component by wavelength dependence of absorbance due to silicon so that optical charge generated in the shallow portion of the silicon substrate is detected and converted into a signal based on the blue light component by the photodiode located in the shallow portion whereas optical charge generated in the deep portion of the silicon substrate is detected and converted into a signal based on the red light component by the photodiode in located in the deep portion,

wherein the solid-state image sensing device further comprises a trimming layer provided between the photoelectric conversion layer and the silicon substrate for adjusting intensity of each of respective color light components of the light which is transmitted through the photoelectric conversion layer so as to be made incident on the photodiodes.

2. The solid-state image sensing device as claimed in claim 1 , wherein the trimming layer comprises a material which is formed so that spectral sensitivity characteristic of the light transmitted through both the photoelectric conversion layer and the trimming layer exhibits a peak in a wavelength range of from 500 nm to 600 nm and a half-value width of not higher than 80 nm.

3. The solid-state image sensing device as claimed in claim 2 , wherein the trimming layer comprises a material which is formed so that spectral sensitivity characteristic of the light transmitted through both the photoelectric conversion layer and the trimming layer exhibits a peak in a wavelength range of from 530 nm to 570 nm and a half-value width of not higher than 50 nm.

4. The solid-state image sensing device as claimed in claim 1 , wherein the photodiode located in the shallow portion comprises a junction between a p-type semiconductor layer and an n-type semiconductor layer.

5. The solid-state image sensing device as claimed in claim 4 , wherein the photodiode located in the deep portion comprises a junction between the n-type semiconductor layer and a p-type semiconductor substrate.

6. The solid-state image sensing device as claimed in claim 1 , wherein the photoelectric conversion layer is wider than both of the photodiodes.

7. The solid-state image sensing device as claimed in claim 1 , wherein a pixel electrode layer extends between the photoelectric conversion layer and the photodiodes.