Isolation of a high-voltage diode between a high-voltage region and a low-voltage region of an integrated circuit
View Patent ↗Provided is a high-voltage integrated circuit device including a high-voltage resistant diode. The device includes a low-voltage circuit region having a plurality of semiconductor devices, which operate with respect to a ground voltage, a high-voltage circuit region having a plurality of semiconductor devices, which operate with respect to a voltage that varies from the ground voltage to a high voltage, a junction termination and a first isolation region electrically isolating the low-voltage circuit region from the high-voltage circuit region, a high-voltage resistant diode formed between the low-voltage circuit region and the high-voltage circuit region, and a second isolation region surrounding the high-voltage resistant diode and electrically isolating the high-voltage resistant diode from the low-voltage circuit region and the high-voltage circuit region. Therefore, a leakage current of the high-voltage resistant diode can be prevented.
1. A high-voltage integrated circuit device comprising:
a low-voltage circuit region;
a high-voltage circuit region;
a first diffused isolation region that completely surrounds only a high voltage resistant diode and isolates the high voltage resistant diode from the high-voltage circuit region and the low-voltage circuit region, the high voltage resistant diode connected to both the high-voltage circuit region and the low-voltage circuit region; and
a second diffused isolation region that only partially surrounds the high-voltage circuit region;
wherein the first and second diffused isolation regions are connected together such that the high-voltage circuit region is isolated from the low-voltage circuit region by the combination.
2. The device of claim 1 , wherein the high-voltage resistant diode is a bootstrap diode.
3. The device of claim 1 , wherein the high-voltage resistant diode comprises an anode electrode and a cathode electrode and maintains its electrical characteristics when a voltage of 600V or less is applied between the anode electrode and the cathode electrode.
4. The device of claim 1 , wherein the high-voltage resistant diode comprises:
a first conductive type substrate;
a second conductive type epitaxial layer formed on the substrate, said second conductivity type being opposite to said first conductivity type;
an insulating film formed on the epitaxial layer;
a first conductive type well region formed in an upper region of the epitaxial layer;
a first conductive type and heavily doped anode region formed in an upper region of the well region;
a second conductive type and heavily doped cathode region formed in the upper region of the epitaxial layer horizontally separated by a predetermined distance from the anode region;
an anode electrode electrically connected to the anode region; and
a cathode electrode electrically connected to the cathode region.
5. The device of claim 1 , wherein the first diffused isolation region comprises:
a first diffusion region comprising a first conductive type buried layer overlapping a portion of the substrate and the epitaxial layer; and
a second diffusion region comprising another first conductive type buried layer overlapping another portion of the substrate and another portion of the epitaxial layer.