IP Library Granted Patent US 8,513,677
Granted Patent B2
US 8,513,677 · App. 11/378,799 · Granted Aug 20, 2013

Display device having an aluminum complex oxide on metal layer for improving corrosion resistance

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Quick Facts
Patent No.
US 8,513,677
App. No.
11/378,799
Granted
Aug 20, 2013
Kind
B2
Abstract

A thin film transistor substrate for a liquid crystal display device includes a substrate, a metal layer on the substrate, and an aluminum complex oxide layer on the metal layer. The aluminum complex oxide layer comprises at least one selected from the group consisting of zirconium, tungsten, chromium and molybdenum. A passivation layer is formed on the aluminum complex oxide layer through a dipping process.

Claims (6)

1. A display device comprising: a substrate;

a metal layer formed on the substrate and including a top surface and a side surface, wherein the metal layer comprises aluminum or an aluminum alloy;

an insulating layer covering the metal layer; and

an aluminum complex oxide layer disposed between the top and side surfaces of the metal layer and the insulating layer, wherein the aluminum complex oxide layer is formed by applying to the metal layer a coating solution that comprises at least one selected from the group consisting of zirconium, tungsten, chromium and molybdenum.

2. The display device of claim 1 , wherein the insulating layer comprises a silicon nitride layer on the aluminum complex oxide layer.

3. The display device of claim 1 , wherein the metal layer comprises a gate line, a data line or both a gate line and a data line.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 22, 2012
From: SAMSUNG ELECTRONICS CO., LTD.
To: SAMSUNG DISPLAY CO., LTD.
Reel/Frame 029008/0423 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 16, 2006
From: SEO, JONG-HYUN; HONG, MUN-POY; ROH, NAM-SEOK
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 017694/0022 →