Process for fabricating an integrated circuit including a capacitor with a copper electrode
View Patent ↗The process and integrated circuit include at least one capacitor in which at least one of the electrodes is made of copper. The method includes forming a nitrogen-doped silicon carbide film between the copper electrode and the dielectric film of the capacitor.
1. A method for fabricating an integrated circuit including at least one capacitor having at least one copper electrode, the method comprising:
forming a high-k dielectric adjacent the at least one copper electrode; and
forming a nitrogen-doped silicon carbide film between the at least one copper electrode and the high-k dielectric.
2. The method according to claim 1 , wherein the at least one copper electrode comprises a lower copper electrode and an upper copper electrode; and wherein the nitrogen-doped silicon carbide film comprises a first nitrogen-doped silicon carbide film is formed between the high-k dielectric and the lower copper electrode, and a second nitrogen-doped silicon carbide film formed between the high-k dielectric and the upper copper electrode.
3. The method according to claim 1 , wherein the nitrogen-doped silicon carbide film has a thickness of at least three angstroms.
4. The method according to claim 1 , wherein forming the nitrogen-doped silicon carbide film comprises plasma-enhanced chemical vapor deposition of the nitrogen-doped silicon carbide film.
5. The method according to claim 1 , wherein forming the nitrogen-doped silicon carbide film comprises plasma-enhanced atomic layer deposition of the nitrogen-doped silicon carbide film.
6. A method for fabricating an integrated circuit capacitor, the method comprising:
forming at least one copper electrode;
forming a dielectric adjacent the at least one copper electrode; and
forming a nitrogen-doped silicon carbide film between the at least one copper electrode and the dielectric.
7. The method according to claim 6 , wherein forming the at least one copper electrode comprises forming a lower copper electrode and an upper copper electrode; and wherein forming the nitrogen-doped silicon carbide film comprises forming a first nitrogen-doped silicon carbide film is between the dielectric and the lower copper electrode, and forming a second nitrogen-doped silicon carbide film between the dielectric and the upper copper electrode.
8. The method according to claim 6 , wherein the nitrogen-doped silicon carbide film has a thickness of at least three angstroms.
9. The method according to claim 6 , wherein forming the nitrogen-doped silicon carbide film comprises plasma-enhanced chemical vapor deposition of the nitrogen-doped silicon carbide film.
10. The method according to claim 6 , wherein forming the nitrogen-doped silicon carbide film comprises plasma-enhanced atomic layer deposition of the nitrogen-doped silicon carbide film.