Meso-microelectromechanical system having a glass beam and method for its fabrication
View Patent ↗A meso-electromechanical system ( 900, 1100 ) includes a substrate ( 215 ), a standoff ( 405, 1160 ) disposed on a surface of the substrate, a first electrostatic pattern ( 205, 1105, 1110, 1115, 1120 ) disposed on the surface of the substrate, and a glass beam ( 810 ). The glass beam ( 810 ) has a fixed region ( 820 ) attached to the standoff and has a second electrostatic pattern ( 815, 1205, 1210, 1215, 1220 ) on a cantilevered location of the glass beam. The second electrostatic pattern is substantially co-extensive with and parallel to the first electrostatic pattern. The second electrostatic pattern has a relaxed separation ( 925 ) from the first electrostatic pattern when the first and second electrostatic patterns are in a non-energized state. In some embodiments, a mirror is formed by the electrostatic materials that form the second electrostatic pattern. The glass beam may be patterned using sandblasting ( 140 ).
1. A method for fabricating a meso-microelectromechanical system, comprising:
forming a first electrostatic pattern within a device region of a substrate from a metal layer on the substrate;
disposing a sacrificial photodielectric layer over the device region;
exposing the sacrificial photodielectric layer to form at least one latent standoff region;
coating top and bottom surfaces of a glass dielectric with an electrostatic material;
laminating the coated glass dielectric to the sacrificial photodielectric layer;
forming a patterned protective layer on the coated glass dielectric having a pattern of a glass beam that includes a second electrostatic pattern substantially co-extensive with the first electrostatic pattern;
removing glass and electrostatic material not within the pattern of the glass beam; and
removing portions of the sacrificial photodielectric layer other than the at least one latent standoff region, thereby forming at least one standoff.
2. The method according to claim 1 ,
wherein forming the patterned protective layer comprises
applying a photosensitive etch resist at least 50 microns thick on the top surface of the glass dielectric, and
exposing the photosensitive etch resist using a pattern; and
wherein removing the glass and electrostatic material not within the pattern of the glass beam comprises sandblasting.
3. The method according to claim 1 ,
wherein forming the patterned protective layer comprises
applying a photosensitive etch resist, and
exposing the photosensitive etch resist using a pattern; and
wherein removing the glass and electrostatic material not within the pattern of the glass beam comprises applying a glass etchant.
4. The method according to claim 1 , wherein removing portions of the sacrificial photodielectric layer further comprises solvent developing using ultrasonic agitation.
5. The method according to claim 1 , further comprising:
forming an electrical connection to the second electrostatic pattern at a portion of the glass beam laminated to the at least one standoff.
6. The method according to claim 1 , wherein removing the glass and electrostatic material not within the pattern of the glass beam comprises at least one of a mechanical and chemical means.