Organic electroluminescent device and fabrication methods thereof

1. An organic electroluminescent device, comprising a pixel element, the pixel element comprising;

a substrate, comprising a control area and a sensitive area;

a switch device and a driving device overlying the control area, wherein the switch device has a first active layer, the driving device has a second active layer, wherein the first and second active layers are polysilicon layers;

a photo diode overlying the sensitive area, wherein the photo diode serves as a photo sensor, wherein the photo diode comprises: a third active layer, a fourth active layer, and a fifth active layer, wherein the fifth active layer is connected to both the third and fourth active layers;

an OLED element disposed in the sensitive area and illuminating to the photo sensor;

a capacitor coupled to the photo sensor and the driving device;

a gate dielectric layer disposed overlying the first, the second, the third and the fourth active layers;

a first gate and a second gate disposed on the gate dielectric layer overlying the control area, wherein the first gate is in the switch device, and the second gate is in the driving device; and

an interlayer dielectric layer disposed on the gate dielectric layer overlying the sensitive area, the interlayer dielectric layer having a plurality of first openings therein to expose the third and fourth active layers, wherein the first openings are filled with the fifth active layer;

wherein a photo current corresponding to a brightness of the OLED element is generated by the photo diode responsive to the OLED element illuminating the photo diode such that a voltage of the capacitor is adjusted by the photo current to control the current passing through the driving device, thus changing the illumination of the OLED element.

2. The organic electroluminescent device as claimed in claim 1 , wherein the switch device and the driving device are top gate transistors.

3. The organic electroluminescent device as claimed in claim 1 , wherein the photo diode is a lateral photo diode.

4. The organic electroluminescent device as claimed in claim 1 , wherein the third and fourth active layers are polysilicon.

5. The organic electroluminescent device as claimed in claim 4 , wherein the third and fourth active layers are of different conductivity types.

6. The organic electroluminescent device as claimed in claim 5 , wherein the third active layer is of P-type conductivity and the fourth active layer is of N-type conductivity.

7. The organic electroluminescent device as claimed in claim 1 , wherein the fifth active layer is amorphous silicon.

8. The organic electroluminescent device as claimed in claim 7 , wherein the fifth active layer has a thickness of between 4500˜5500 Å.

9. The organic electroluminescent device as claimed in claim 1 , wherein the interlayer dielectric layer further comprises a plurality of second openings, exposing the first and second gates and a portion of the first and second active areas, and the second openings are filled with conductive contacts.

10. The organic electroluminescent device as claimed in claim 1 , wherein the device is a display panel.

11. The organic electroluminescent device as claimed in claim 10 , further comprising an electronic device, wherein the electronic device comprises;

the display panel; and

an input unit coupled to the display panel and operative to provide input to the display panel such that the display panel displays images.