Refined mirror structure for reducing the effect of feedback on a VCSEL
View Patent ↗A VCSEL is provided that integrates an absorbing layer sandwiched within a null of the standing wave in the emitting mirror to reduce the reflectivity and transmissivity of the emitting mirror as seen by the feedback optical wave, with minimal effect on the reflectivity of the emitting mirror as seen by the light exiting the cavity. The absorbing layer may be made of a suitable absorbing material, such as a GaAs layer in a laser emitting near 850 nm or highly doped p-layer, for instance, and may be disposed epitaxially in a semiconductor or metamorphic mirror. The absorbing layer sandwich may be incorporated into the VCSEL after the last mirror pair or at any desired position with the emitting mirror array.
1. A vertical cavity surface emitting laser, comprising:
an optical cavity adjacent a first mirror;
an emitting mirror formed form a plurality of mirror periods adjacent said optical cavity;
a mode defining aperture for controlling transverse modes; and
an absorbing structure integrated with the emitting mirror,
wherein said absorbing structure is laterally located within at least a portion of said mode defining aperture, and
wherein said absorbing structure includes an absorbing layer positioned between an alternating series of low index and high index layers at or near a null in the standing optical wave pattern such that said absorbing structure can be positioned between any of the plurality of mirror periods in the emitting mirror so as to strongly interact with external light reflected back into the cavity.
2. The vertical cavity surface emitting laser of claim 1 , said absorbing structure comprising:
a first half-wave thick low index layer;
a first quarter-wave thick high index layer;
the absorption layer;
a second half-wave thick low index layer; and
a second quarter-wave thick high index layer.
3. The vertical cavity surface emitting laser of claim 1 , wherein said absorbing structure is adjacent the top surface of said emitting mirror.
4. The vertical cavity surface emitting laser of claim 1 , wherein said absorbing structure is positioned within said emitting mirror between two of said plurality of said mirror periods.
5. The vertical cavity surface emitting laser of claim 4 , wherein said absorbing structure is positioned within said emitting mirror wherein 9 mirror periods are below said absorbing structure and 2 mirror periods are above said absorbing structure.
6. The vertical cavity surface emitting laser of claim 1 , wherein said absorbing layer is a layer of conductive material.
7. The vertical cavity surface emitting laser of claim 6 wherein said conductive material is titanium.
8. The vertical cavity surface emitting laser of claim 1 wherein said absorbing layer is a layer of semiconductor material.
9. The vertical cavity surface emitting laser of claim 8 wherein said semiconductor material is doped p-type.
10. The vertical cavity surface emitting laser of claim 8 wherein the semiconductor material is a narrow bandgap material, and wherein an absorption edge of said semiconductor material is at a longer wavelength than emission wavelength of said vertical cavity surface emitting laser.
11. The vertical cavity surface emitting laser of claim 1 wherein said plurality of mirror periods in said emitting mirror comprises a DBR.
12. A vertical cavity surface emitting laser, comprising:
an optical cavity adjacent a first mirror;
an emitting mirror formed form a plurality of mirror periods adjacent said optical cavity; and
an absorbing structure formed adjacent a top surface of said emitting mirror,
wherein said absorbing structure includes an absorbing layer positioned between an alternating series of low index and high index layers at or near a null in the standing optical wave pattern such that said absorbing structure can be positioned between any of the plurality of mirror periods in the emitting mirror so as to strongly interact with external light reflected back into the cavity.
13. The vertical cavity surface emitting laser of claim 12 , said absorbing structure comprising:
a first half-wave thick low index layer;
a first quarter-wave thick high index layer;
the absorption layer;
a second half-wave thick low index layer; and
a second quarter-wave thick high index layer.
14. A vertical cavity surface emitting laser, comprising:
an optical cavity adjacent a first mirror;
an emitting mirror formed form a plurality of mirror periods adjacent said optical cavity; and
an absorbing structure integrated within the emitting mirror,
wherein said absorbing structure includes an absorbing layer positioned between an alternating series of low index and high index layers at or near a null in the standing optical wave pattern such that said absorbing structure can be positioned between any of the plurality of mirror periods in the emitting mirror so as to strongly interact with external light reflected back into the cavity.
15. The vertical cavity surface emitting laser of claim 14 , said absorbing structure comprising:
a first half-wave thick low index layer;
a first quarter-wave thick high index layer;
the absorption layer;
a second half-wave thick low index layer; and
a second quarter-wave thick high index layer.
16. The vertical cavity surface emitting laser of claim 1 , wherein said absorbing structure is positioned within said emitting mirror between two of said plurality of said mirror periods.
17. The vertical cavity surface emitting laser of claim 16 , wherein said absorbing structure is positioned within said emitting mirror wherein 9 mirror periods are below said absorbing structure and 2 mirror periods are above said absorbing structure.