IP Library Granted Patent US 7,425,465
Granted Patent B2
US 7,425,465 · App. 11/383,437 · Granted Sep 16, 2008

Method of fabricating a multi-post structures on a substrate

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Quick Facts
Patent No.
US 7,425,465
App. No.
11/383,437
Granted
Sep 16, 2008
Kind
B2
Abstract

Micromechanical devices having complex multilayer structures and techniques for forming the devices are described.

Claims (21)

1. A method of forming a post structure assembly, comprising:

bonding a first substrate to a second substrate, wherein the bonding is achieved without a bonding layer;

patterning the second substrate, wherein the patterning leaves a first portion of material of the second substrate and a second portion of material of the second substrate and removes material between the first and second portions of the second substrate, the first potion forming a plurality of structures and the second portion forming an assembly that is a unitary structure having a plurality of apertures therein; and

separating the second portion of the second substrate from the first substrate, wherein the second portion does not include the structures.

2. The method of claim 1 , wherein bonding the first substrate to the second substrate includes bonding together two substrates that include silicon.

3. The method of claim 2 , wherein the second substrate has a thickness and patterning the second substrate includes patterning one or more through-holes that extend through the thickness of the second substrate.

4. The method of claim 2 , wherein patterning the second substrate includes deep reactive ion etching.

5. The method of claim 2 , wherein bonding the first substrate to the second substrate includes bonding together two silicon substrates.

6. The method of claim 5 , wherein bonding together the two silicon substrates includes forming a fusion bond.

7. The method of claim 2 , further comprising annealing the assembly so that the first substrate and the structures become permanently bonded together.

8. The method of claim 7 , wherein annealing the assembly forms an assembly that is substantially free of oxide between the structures and the first substrate.

9. The method of claim 2 , further comprising bonding a third substrate to top surfaces of the structures.

10. The method of claim 9 , further comprising annealing the third substrate to the top surfaces of the structures.

11. The method of claim 9 , wherein bonding the third substrate includes bonding a substrate having one or more apertures formed therein to the top surfaces of the structures.

12. The method of claim 9 , wherein bonding the third substrate includes bonding a substrate having one or more recesses formed therein to the top surfaces of the structures.

13. The method of claim 2 , wherein patterning the second substrate to leave the first portion of material that forms the plurality of structures includes patterning the second substrate so that the first portion of material forms a plurality of posts.

14. The method of claim 13 , wherein patterning the second substrate to leave the first portion of material that forms the plurality of structures includes the second substrate so that the first portion of material forms patterning a plurality of round posts.

15. The method of claim 13 , wherein patterning the second substrate to leave the first portion of material that forms the plurality of structures includes patterning the second substrate so that the first portion of material forms a plurality of conical posts.

16. The method of claim 13 , wherein patterning the second substrate to leave the first portion of material that forms the plurality of structures includes patterning the second substrate so that the first portion of material forms a plurality of posts each having a polygonal shape.

17. The method of claim 13 , wherein patterning the second substrate to leave the first portion of material that forms the plurality of structures includes patterning the second substrate so that the first portion of material forms a plurality of posts having a cross-section having a shape with at least one curved side.

18. The method of claim 13 , wherein patterning the second substrate to leave the first portion of material that forms the plurality of structures includes patterning the second substrate so that the first portion of material forms a plurality of hollow posts.

Assignments (2)
CHANGE OF NAME Recorded Jan 31, 2007
From: DIMATIX, INC.
To: FUJIFILM DIMATIX, INC.
Reel/Frame 018834/0595 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 20, 2006
From: BIRKMEYER, JEFFREY
To: DIMATIX, INC.
Reel/Frame 017818/0737 →