IP Library Granted Patent US 7,923,262
Granted Patent B2
US 7,923,262 · App. 11/384,326 · Granted Apr 12, 2011

Method of manufacturing patterned ferroelectric media

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Quick Facts
Patent No.
US 7,923,262
App. No.
11/384,326
Granted
Apr 12, 2011
Kind
B2
Abstract

A method of manufacturing patterned ferroelectric media, which includes forming an electrode on a substrate; forming features having a predetermined pattern on the electrode, the features including a precursor for forming a ferroelectric material; and reacting a source material with the precursor features to transform the precursor features into ferroelectric features. Also disclosed is a method which includes forming on a substrate an electrode having wells and precursor features formed in the wells of the electrode, the precursor features including a precursor for forming a ferroelectric material; and reacting a source material with the precursor features to transform the precursor features into ferroelectric features. The above first embodiment relates to non-embedded type media, and the above second embodiment relates to embedded type media.

Claims (27)

1. A method of manufacturing patterned ferroelectric media having a plurality of ferroelectric features, the method comprising:

forming an electrode on a substrate;

producing a precursor at a temperature lower than 500° C. so as to produce a precursor material;

forming precursor features having a pattern corresponding to the formation of said ferroelectric features on the electrode, said precursor features being transformed into the ferroelectric features; and

reacting a source material with the patterned precursor features to transform the precursor features into ferroelectric features, wherein the reaction between the source material and the precursor features occurs while the source material is being supplied, the transformation of the precursor features is governed by internal diffusion and internal nucleation of the source material to provide said ferroelectric features, and the reaction is a pulsed reaction whereby the source material is periodically reduced.

2. The method of claim 1 , wherein the electrode is formed to have a plurality of wells, and the features are formed in the wells.

3. The method of claim 2 , wherein the ferroelectric features comprise a ferroelectric material selected from the group consisting of PbTiO 3 and Pb(Zr, Ti)O 3 .

4. The method of claim 2 , wherein the precursor comprises Ti/TiO 2 .

5. The method of claim 2 , wherein the precursor comprises Ti/TiO 2 and Zr/ZrO 2 .

6. The method of claim 2 , which comprises generating the source material under ambient pressure by thermal evaporation to induce reaction with the precursor.

7. The method of claim 6 , which further comprises heating the electrode structure in which the precursor features are combined with a heater to thereby transform the precursor into a ferroelectric material, wherein the electrode is formed of Pt, the precursor features comprise Ti/TiO 2 , and the source material is PbO.

8. The method of claim 2 , which comprises generating the source material under vaccum to induce reaction with the precursor.

9. The method of claim 8 , which further comprises heating the electrode structure in which the precursor features are combined with a heater, to thereby transform the precursor into a ferroelectric material, wherein the electrode is formed of Pt, the precursor features comprise Ti/TiO 2 , and the source material is PbO.

10. The method of claim 2 , wherein the electrode is formed of Pt, the precursor features comprise Ti/TiO 2 , and the source material is PbO.

11. The method of claim 10 , which further comprises heating the electrode structure in which the precursor features are combined with a heater, to thereby transform the precursor into a ferroelectric material.

12. The method of claim 2 , which comprises generating the source material under vacuum by sputtering, evaporation, pulse laser deposition or chemical vapor deposition.

13. The method of claim 1 , wherein the upper surface of the electrode is even, and the features are formed on the upper surface of the electrode.

14. The method of claim 13 , wherein the ferroelectric features comprise a ferroelectric material selected from the group consisting of PbTiO 3 and Pb(Zr, Ti)O 3 .

15. The method of claim 13 , wherein the precursor comprises Ti/TiO 2 .

16. The method of claim 13 , wherein the precursor comprises Ti/TiO 2 and Zr/ZrO 2 .

17. The method of claim 13 , which comprises generating the source material under ambient pressure by thermal evaporation to induce reaction with the precursor.

18. The method of claim 17 which further comprises heating the electrode structure in which the patterned features are combined with a heater, to thereby transform the precursor into a ferroelectric material, wherein the electrode is formed of Pt, the patterned features formed on the electrode comprise Ti/TiO 2 , and the source material is PbO.

19. The method of claim 13 , which comprises generating the source material under vacuum to induce reaction with the precursor.

20. The method of claim 19 , which further comprises heating the electrode structure in which the patterned features are combined with a heater, to thereby transform the precursor into a ferroelectric material, wherein the electrode is formed of Pt, the patterned features formed on the electrode comprise Ti/TiO 2 , and the source material is PbO.

21. The method of claim 19 , which comprises generating the source material under vacuum by sputtering, evaporation or pulse laser deposition.

22. The method of claim 13 , wherein the electrode is formed of Pt, the patterned features formed on the electrode comprise Ti/TiO 2 , and the source material is PbO.

23. The method of claim 22 , which further comprises heating the electrode structure in which the patterned features are combined with a heater, to thereby transform the precursor into a ferroelectric material.

Assignments (3)
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE ERRONEOUSLY FILED NO. 7255478 FROM SCHEDULE PREVIOUSLY RECORDED AT REEL: 028153 FRAME: 0689. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT. Recorded Oct 5, 2016
From: SAMSUNG ELECTRONICS CO., LTD.
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 040001/0920 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 3, 2012
From: SAMSUNG ELECTRONICS CO., LTD.
To: SEAGATE TECHNOLOGY INTERNATIONAL
Reel/Frame 028153/0689 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 21, 2006
From: BUEHLMANN, SIMON; HONG, SEUNG-BUM
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 017722/0053 →