Thin film transistor circuit device, production method thereof and liquid crystal display using the thin film transistor circuit device
View Patent ↗A thin film transistor circuit device and the production method thereof is demanded for a thin film transistor circuit device, which contains wiring having a structure of an aluminum alloy in a lower layer and a molybdenum alloy in an upper layer, wherein corrosion in air of the molybdenum alloy does not proceed easily. A thin film transistor circuit device which exposes a portion of wiring covered with an insulating film that connects thin film transistors of a main circuit region formed on a center portion of a substrate to a protection circuit region formed on an outer periphery of the substrate, which contains on the exposed surface a terminal which is formed of terminal electrode metal, wherein an uppermost surface of the wiring is a molybdenum alloy comprising niobium.
1. A method of forming a thin film transistor circuit device comprising a thin film transistor and a wiring which is formed in a main circuit region formed on a center of a substrate and an outer circuit region formed on an outer periphery of the substrate, the method comprising:
forming an insulating film on the electrode of the thin film transistor or the wiring;
exposing a surface of an uppermost layer of the electrode of the thin film transistor or the wiring at a via aperture formed on the insulating film at the thin film transistor or the wiring; and
forming a wiring between the via apertures, wherein
said exposed surface of the uppermost layer of the electrode of the thin film transistor or the wiring is a molybdenum alloy comprising niobium.
2. A method of forming a thin film transistor circuit device according to claim 1 , wherein oxidizing said exposed surface of the uppermost layer of the electrode of the thin film transistor or the wiring follows after the exposing a surface of the uppermost layer of the electrode of the thin film transistor or the wiring at the via aperture formed on the insulating film at the thin film transistor or the wiring.
3. A method of forming a thin film transistor circuit device according to claim 1 , wherein the forming a wiring between the via apertures comprises sputtering with oxygen containing atmosphere.