Method for manufacturing semiconductor device, and method and structure for implementing semicondutor device

1. A method for implementing a semiconductor device, the semiconductor device including an electrode, a projection that is formed of a first resin and projects with respect to the electrode, and a conductive layer that is electrically connected to the electrode and covers an upper surface of the projection, the method comprising:

preparing a second resin having a curing temperature which is lower than a glass transition temperature of the first resin by no less than 30 degrees Celsius; and

implementing the semiconductor device on a mounting substrate with a joint material formed of the second resin arranged between the semiconductor device and the mounting substrate through heating and pressurization.

2. The method according to claim 1 , wherein the projection has a semicircular cross-sectional shape.

3. The method according to claim 1 , wherein the first resin has a glass transition temperature which is not less than 270 degrees Celsius.

4. The method according to claim 1 , wherein the first resin is phenol resin or polyimide resin.

5. The method according to claim 1 , wherein the second resin is epoxy resin.

6. The method according to claim 1 ,

wherein the electrode is one of a plurality of adjacently arranged electrodes,

wherein the projection is formed to straddle the electrodes,

wherein the conductive layer is one of a plurality of conductive layers that are provided on an upper surface of the projection in correspondence with the electrodes, and

wherein each of the conductive layers is electrically connected to a corresponding one of the electrodes.

7. The method according to claim 1 , wherein the joint material is a non-conductive joint material.

8. A method for implementing a semiconductor device on a mounting substrate, comprising:

forming a projection that projects with respect to an electrode provided in the semiconductor device using a first resin;

providing a conductive layer that is electrically connected to the electrode and covers the projection;

forming a joint material using a second resin having a curing temperature which is lower than a glass transition temperature of the first resin by no less than 30 degrees Celsius;

arranging the joint material between the semiconductor device and the mounting substrate; and

performing heating and pressurization on the joint material, the semiconductor device, and the mounting substrate with the joint material located between the semiconductor device and the mounting substrate.