Method of manufacturing fine features for thin film transistors
View Patent ↗A process for fabricating fine features such as small gate electrodes on a transistor. The process involves the jet-printing of a mask and the plating of a metal to fabricate sub-pixel and standard pixel size features in one layer. Printing creates a small sub-pixel size gap mask for plating a fine feature. A second printed mask may be used to protect the newly formed gate and etch standard pixel size lines connecting the small gates.
1. A method of patterning a feature on a substrate, the method comprising:
depositing a seed layer on a substrate;
depositing a first printed mask to pattern a fine feature where the fine feature is defined by a gap formed by two printed features and has a distance smaller than a minimum dimension of a single printed feature;
growing a thin film around the first printed mask and on top of the seed layer to form the fine feature;
removing the first printed mask;
depositing a second printed mask to pattern a second mask layer aligned to the first patterned fine feature to define a second patterned feature and to mask the fine feature;
etching the exposed thin film and underlying seed layer; and
removing the second printed mask.
2. The method defined in claim 1 wherein the thin film is a metal or a dielectric.
3. The method defined in claim 1 wherein the growth method for the thin film around the first printed mask comprises electroplating, electroless plating, anodization, or atomic layer deposition.
4. The method defined in claim 1 wherein the first and second printed masks comprise a phase change material.
5. A method of forming an electronic device on a substrate, the method comprising:
depositing a thin film seed layer on a substrate;
depositing a first printed mask to pattern a fine feature where the fine feature is defined by a gap formed by two printed features and having a distance smaller than a minimum dimension of a single printed feature;
growing a thin film around the first printed mask and on top of the thin film seed layer to form the fine feature;
removing the first printed mask;
forming an electrical component with fine features for an electronic device;
depositing a second printed mask to pattern a second mask layer aligned to the first patterned fine feature to define a second patterned feature and to mask the fine feature;
etching the exposed thin film and underlying seed layer; and
removing the second printed mask.
6. The method defined in claim 5 wherein the thin film is a metal or a dielectric.
7. The method defined in claim 5 wherein the growth method for the thin film around the first printed mask comprises electroplating, electroless plating, anodization, or atomic layer deposition.
8. The method defined in claim 5 wherein the first and second printed masks comprise a phase change material.
9. The method of claim 5 wherein the electronic device is an amorpohous silicon thin film transistor or an organic thin film transistor.
10. The method of claim 5 wherein the first and second patterned features are co-planar features.
11. A method of making a portion of an array of thin film transistors, the method comprising;
depositing a thin film seed layer on a substrate;
depositing a first printed mask to pattern a fine feature where the fine feature is defined by a gap formed by two printed features and having a distance smaller than a minimum dimension of a single printed feature;
growing a thin film around the first printed mask and on top of the thin film seed layer to form the fine feature;
removing the first printed mask to define the gate electrode regions of the individual thin film transistors in the array of thin film transistors;
depositing a second printed mask to pattern a second mask layer aligned to the first patterned fine feature to define a second patterned fine feature and to mask the fine feature;
etching the exposed thin film and underlying seed layer; and
removing the second printed mask to define the second patterned fine feature aligned to the first patterned fine feature, such as an address line on the thin film transistor that connects the gate electrode region to another gate electrode region.
12. The method defined in claim 11 wherein the thin film is a metal or a dielectric.
13. The method defined in claim 11 wherein the growth method for the thin film around the first printed mask comprises electroplating, electroless plating, anodization, or atomic layer deposition.
14. The method defined in claim 11 wherein the first and second printed masks comprise a phase change material.
15. The method defined in claim 11 wherein the first pattern defines a fine feature gate electrode and the second pattern defines an address line aligned to the gate electrode.
16. The method defined in claim 11 wherein the gate electrode and address line are used with a circuit containing amorphous silicon or organic semiconductors.
17. The method of claim 11 where the first and second patterned features are co-planar features.
18. A method of making a thin film transistor array comprising:
depositing a seed layer on a substrate;
depositing a first printed mask to pattern a fine feature where the fine feature is defined by a gap formed by two printed features and has a distance smaller than a minimum dimension of a single printed feature;
growing a thin film around the first printed mask and on top of the thin film seed layer to form the fine feature;
removing the first printed mask to define a gate electrode region for a thin film transistor;
depositing a second printed mask to define an address line aligned to a gate electrode and to mask the fine feature;
etching the thin film and underlying seed layer; and
removing the second printed mask to define an address line that connects the gate electrode region to other gate electrode regions of the thin film transistor array.
19. The method defined in claim 18 wherein the thin film is a metal or a dielectric.
20. The method defined in claim 18 wherein the growth method for the thin film around the first printed mask comprises electroplating, electroless plating, anodization, or atomic layer deposition.
21. The method defined in claim 18 wherein the first and second printed masks comprise a phase change material.
22. The method of claim 18 where the gate electrode and the address line are co-planar.
23. A method of making a thin film transistor array comprising:
depositing a seed layer on a transparent substrate;
depositing a printed mask to pattern both a plurality of fine features where a fine feature is defined by a gap formed by two printed features and having a distance smaller than a minimum dimension of a single printed feature and a plurality of address lines that connects the plurality of fine features;
growing a thin film around the printed mask and on top of the thin film seed layer to form the plurality of fine features;
removing the printed mask;
removing the seed layer not covered by the grown film to define a plurality of fine features and the plurality of address lines that connects the plurality of fine features of the thin film transistor array and,
depositing a dielectric layer over both the plurality of fine feature and the plurality of address lines.
24. The method of claim 23 where the plurality of fine features are gates of a thin film transistor array.
25. The method of claim 23 further comprising forming a self-aligned source and drain electrode by:
depositing a photodefinable sacrificial layer over the dielectric layer;
patterning the sacrificial layer to define an island feature over the plurality of fine features;
exposing incident irradiation through the transparent substrate to define the sacrificial layer self-aligned to the plurality of fine features;
depositing a metal layer;
defining the metal layer to form the source, drain and address lines of the TFT array;
removing the sacrificial layer and metal covering the sacrificial layer to define the source and drain contacts self aligned to the plurality of fine features; and
depositing and patterning a semiconductor between the source and drain contacts.
26. The method of claim 25 where the semiconductor comprises an organic semiconducting polymer, or organic molecular semiconductor or an inorganic semiconductor.