Apparatus and method for manufacturing semiconductor device, and electronic apparatus
View Patent ↗A method for manufacturing a semiconductor device, comprises providing a semiconductor layer deposited on a substrate with heat treatment by using a flame of a gas burner fueled by a hydrogen-and-oxygen mixed gas as a heat source.
1. A semiconductor manufacturing apparatus, comprising:
a water tank that stores water;
an electrolytic tank in which the water is decomposed into a hydrogen-and-oxygen mixed gas by an electric current;
a gas burner that combusts the hydrogen-and-oxygen mixed gas to provide a linear flame,
the gas burner including a rotatable air duct that introduces the mixed gas, the rotatable air duct rotating about its central lengthwise axis and including gas outlets positioned along a length of the rotatable air duct,
wherein the gas outlets are disposed in a spiral manner along the length of the air duct around the central lengthwise axis of the air duct;
a shield that includes a combustion chamber that surrounds the air duct and where the mixed gas combusts, and a nozzle that has a linear opening and emits a combustion gas;
a gas controller that adds a gas to the mixed gas to regulate a mixing ratio of the mixed gas; and
a moving mechanism that moves a semiconductor substrate relative to the flame of the gas burner in a direction perpendicular to the flame;
wherein the air duct having a portion defining a plurality of openings at regular intervals and being moved forward and backward or rotated.
2. The semiconductor manufacturing apparatus according to claim 1 , the air duct being moved forward and backward toward a nozzle in a shield.
3. The semiconductor manufacturing apparatus according to claim 1 , the gas controller emitting a relatively hydrogen rich mixed gas to recrystallize a semiconductor film deposited on the semiconductor substrate.
4. The semiconductor manufacturing apparatus according to claim 1 , the gas controller emitting a relatively oxygen rich mixed gas to provide a gate insulation film deposited on the semiconductor substrate with heat treatment.
5. The semiconductor manufacturing apparatus according to claim 1 , the gas controller adding an inert gas to the mixed gas to regulate a temperature of the flame.
6. The semiconductor manufacturing apparatus according to claim 1 , further comprising:
a heater that heats the semiconductor substrate.