Single plate-type color solid-state image sensing device

1. A color solid-state image sensing device comprising:

a semiconductor substrate having a surface portion where signal reading circuits and high density impurity regions connected to the signal reading circuits respectively are formed;

a blue light detecting photodiode formed in a shallow portion of the semiconductor substrate;

a red light detecting photodiode formed in a deep portion of the semiconductor substrate; and

a green light detecting photoelectric conversion film,

wherein connection regions which are provided so as to be continued to the photodiodes respectively and exposed to a surface of the semiconductor substrate are formed only in portions adjacent to the high density impurity regions so as to transfer electric charge accumulated in each photodiode to corresponding one of the high density impurity regions.

2. The color solid-state image sensing device as claimed in claim 1 , wherein the photoelectric conversion film comprises organic semiconductor.

3. The color solid-state image sensing device as claimed in claim 1 , wherein when an interface where signal charge of minority carriers optically generated in the vicinity of the blue light detecting photodiode branches into a direction toward the surface of the semiconductor substrate and an opposite direction toward the deep side of the semiconductor substrate is regarded as a first interface, and an interface where signal charge of minority carriers optically generated in the vicinity of the red light detecting photodiode branches into the direction toward the surface of the semiconductor substrate and the opposite direction toward the deep side of the semiconductor substrate is regarded as a second interface, the photodiodes are formed in a position where the depth of the first interface from the surface of the semiconductor substrate is from 0.4 μm to 1.1 μm and in a position where the depth of the second interface from the surface of the semiconductor substrate is at least 2.0 μm.

4. The color solid-state image sensing device as claimed in claim 1 , wherein the signal read circuits are formed of MOS transistor circuits or charge transfer paths.

5. The color solid-state image sensing device as claimed in claim 1 , wherein a shading film for shading the surface of the semiconductor substrate except photo acceptance surfaces of the photodiodes is provided on the surface of the semiconductor substrate.

6. The color solid-state image sensing device as claimed in claim 1 , wherein the green light detecting photoelectric conversion film is formed as an upper layer on the semiconductor substrate.

7. The color solid-state image sensing device as claimed in claim 6 , wherein the blue and red light detecting photodiodes are formed within the semiconductor substrate.

8. The color solid-state image sensing device as claimed in claim 1 , wherein the high impurity density regions are disposed within the surface layer of the semiconductor substrate to reduce dark current by preventing a depletion layer of the blue light photodiode from being spread to the surface of the silicon substrate.

9. A color solid-state image sensing device comprising:

a semiconductor substrate having a surface portion where signal reading circuits and high density impurity regions connected to the signal reading circuits respectively are formed;

a blue light detecting photodiode formed in a shallow portion of the semiconductor substrate;

a red light detecting photodiode formed in a deep portion of the semiconductor substrate; and

a green light detecting photoelectric conversion film,

wherein the color solid-state image sensing device further comprises MOS switches for transferring electric charge accumulated in a charge storage layer of each photodiode to corresponding one of the high density impurity regions when a read voltage is applied between the charge storage layer of the photodiode and the corresponding high density impurity region connected to the photodiode.

10. The color solid-state image sensing device as claimed in claim 9 , wherein the photoelectric conversion film comprises organic semiconductor.

11. The color solid-state image sensing device as claimed in claim 9 , wherein when an interface where signal charge of minority carriers optically generated in the vicinity of the blue light detecting photodiode branches into a direction toward the surface of the semiconductor substrate and an opposite direction toward the deep side of the semiconductor substrate is regarded as a first interface, and an interface where signal charge of minority carriers optically generated in the vicinity of the red light detecting photodiode branches into the direction toward the surface of the semiconductor substrate and the opposite direction toward the deep side of the semiconductor substrate is regarded as a second interface, the photodiodes are formed in a position where the depth of the first interface from the surface of the semiconductor substrate is from 0.4 μm to 1.1 μm and in a position where the depth of the second interface from the surface of the semiconductor substrate is at least 2.0 μm.

12. The color solid-state image sensing device as claimed in claim 9 , wherein the signal read circuits are formed of MOS transistor circuits or charge transfer paths.

13. The color solid-state image sensing device as claimed in claim 9 , wherein a shading film for shading the surface of the semiconductor substrate except photo acceptance surfaces of the photodiodes is provided on the surface of the semiconductor substrate.

14. The color solid-state image sensing device as claimed in claim 10 , wherein the green light detecting photoelectric conversion film is formed as an upper layer on the semiconductor substrate.

15. The color solid-state image sensing device as claimed in claim 14 , wherein the blue and red light detecting photodiodes are formed within the semiconductor substrate.

16. The color solid-state image sensing device as claimed in claim 9 , wherein the high impurity density regions are disposed within the surface layer of the semiconductor substrate to reduce dark current by preventing a depletion layer of the blue light photodiode from being spread to the surface of the silicon substrate.

17. A color solid-state image sensing device comprising:

a semiconductor substrate having a surface portion where signal reading circuits and high density impurity regions connected to the signal reading circuits respectively are formed;

a blue light detecting photodiode formed in a shallow portion of the semiconductor substrate;

a red light detecting photodiode formed in a deep portion of the semiconductor substrate; and

a green light detecting photodiode formed in an intermediate portion between the shallow portion and the deep portion,

wherein connection regions which are provided so as to be continued to the photodiodes respectively and exposed to a surface of the semiconductor substrate are formed only in portions adjacent to the high density impurity regions so as to transfer electric charge accumulated in each photodiode to corresponding one of the high density impurity regions.

18. The color solid-state image sensing device as claimed in claim 17 , wherein when an interface where signal charge of minority carriers optically generated in the vicinity of the blue light detecting photodiode branches into a direction toward the surface of the semiconductor substrate and an opposite direction toward the deep side of the semiconductor substrate is regarded as a first interface, an interface where signal charge of minority carriers optically generated in the vicinity of the green light detecting photodiode branches into the direction toward the surface of the semiconductor substrate and the opposite direction toward the deep side of the semiconductor substrate is regarded as a second interface, and an interface where signal charge of minority carriers optically generated in the vicinity of the red light detecting photodiode branches into the direction toward the surface of the semiconductor substrate and the opposite direction toward the deep side of the semiconductor substrate is regarded as a third interface, the photodiodes are formed in a position where the depth of the first interface from the surface of the semiconductor substrate is from 0.3 μm to 0.7 μm, the depth of the second interface from the surface of the semiconductor substrate is from 0.8 μm to 1.6 μm and the depth of the third interface from the surface of the semiconductor substrate is at least 2.0 μm.

19. The color solid-state image sensing device as claimed in claim 17 , wherein the signal read circuits are formed of MOS transistor circuits or charge transfer paths.

20. The color solid-state image sensing device as claimed in claim 17 , wherein a shading film for shading the surface of the semiconductor substrate except photo acceptance surfaces of the photodiodes is provided on the surface of the semiconductor substrate.

21. A color solid-state image sensing device comprising:

a semiconductor substrate having a surface portion where signal reading circuits and high density impurity regions connected to the signal reading circuits respectively are formed;

a blue light detecting photodiode formed in a shallow portion of the semiconductor substrate;

a red light detecting photodiode formed in a deep portion of the semiconductor substrate; and

a green light detecting photodiode formed in an intermediate portion between the shallow portion and the deep portion,

wherein the color solid-state image sensing device further comprises MOS switches for transferring electric charge accumulated in a charge storage layer of each photodiode to corresponding one of the high density impurity regions when a read voltage is applied between the charge storage layer of the photodiode and the corresponding high density impurity region connected to the photodiode.

22. The color solid-state image sensing device as claimed in claim 21 , wherein when an interface where signal charge of minority carriers optically generated in the vicinity of the blue light detecting photodiode branches into a direction toward the surface of the semiconductor substrate and an opposite direction toward the deep side of the semiconductor substrate is regarded as a first interface, an interface where signal charge of minority carriers optically generated in the vicinity of the green light detecting photodiode branches into the direction toward the surface of the semiconductor substrate and the opposite direction toward the deep side of the semiconductor substrate is regarded as a second interface, and an interface where signal charge of minority carriers optically generated in the vicinity of the red light detecting photodiode branches into the direction toward the surface of the semiconductor substrate and the opposite direction toward the deep side of the semiconductor substrate is regarded as a third interface, the photodiodes are formed in a position where the depth of the first interface from the surface of the semiconductor substrate is from 0.3 μm to 0.7 μm, the depth of the second interface from the surface of the semiconductor substrate is from 0.8 μm to 1.6 μm and the depth of the third interface from the surface of the semiconductor substrate is at least 2.0 μm.

23. The color solid-state image sensing device as claimed in claim 21 , wherein the signal read circuits are formed of MOS transistor circuits or charge transfer paths.

24. The color solid-state image sensing device as claimed in claim 21 , wherein a shading film for shading the surface of the semiconductor substrate except photo acceptance surfaces of the photodiodes is provided on the surface of the semiconductor substrate.