IP Library Granted Patent US 7,314,345
Granted Patent B2
US 7,314,345 · App. 11/391,640 · Granted Jan 1, 2008

Semiconductor container opening/closing apparatus and semiconductor device manufacturing method

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Quick Facts
Patent No.
US 7,314,345
App. No.
11/391,640
Granted
Jan 1, 2008
Kind
B2
Abstract

When a conventional semiconductor container opening/closing apparatus opens a lid of a semiconductor container, foreign particles enter into the container from outside through a gap between the container and a wall surface of the container opening/closing apparatus and adhere to a wafer in the container. An apparatus is provided to reduce the number of foreign particles adhering to the wafer by preventing foreign particles from entering into the container at the time of opening the container by the opening/closing apparatus. To achieve this, a velocity-differential pressure ratio obtained by dividing the maximum velocity at the time of opening the lid of the container in a vertical direction to an opening of the container, by the differential pressure between the inside pressure and the outside pressure of said semiconductor manufacturing apparatus, is set to be 0.06 ((m/s) Pa) or less.

Claims (44)

1. A method of manufacturing a plurality of semiconductor devices formed on a semiconductor wafer, comprising the steps of:

(a) accommodating the semiconductor wafer in a semiconductor container and conveying the semiconductor container to a semiconductor manufacturing apparatus;

(b) opposing an opening of said semiconductor container to an opening of said semiconductor manufacturing apparatus in proximity to each other in such a manner that an opener of said semiconductor manufacturing apparatus holds a lid of said opening of said semiconductor container;

(c) connecting said openings such that a velocity differential pressure ratio obtained by dividing the maximum velocity when said opener holding said lid horizontally moves away from said opening of said semiconductor container, by the differential pressure between the inside pressure and the outside pressure of said semiconductor manufacturing apparatus, is set to be 0.06 ((m/s)/Pa) or less; and

(d) processing said semiconductor wafer accommodated in said semiconductor container.

2. A method of manufacturing a plurality of semiconductor devices formed on a semiconductor wafer using a semiconductor container and a semiconductor manufacturing apparatus,

the semiconductor container having:

(i) a container body;

(ii) a container opening at a side portion of said container body;

(iii) a lid covering the container opening when the container opening is opposed,

the semiconductor manufacturing apparatus having:

an inside portion;

a stage portion;

a wall partitioning between the inside portion and the stage portion;

an apparatus opening in the wall; and

an opener covering the apparatus opening when the apparatus opening is closed,

the manufacturing method comprising the steps of:

(a) accommodating the semiconductor wafer in the semiconductor container,

(b) closing the container opening including the semiconductor wafer with the lid;

(c) conveying the closed semiconductor container to the semiconductor manufacturing apparatus, and placing the closed semiconductor container on a stage of the semiconductor manufacturing apparatus;

(d) opposing the container opening to the apparatus opening in proximity to each other in such a manner that the opener holds the lid;

(e) connecting the openings by accommodating the opener together with the lid such that a velocity differential pressure ratio obtained by dividing the maximum velocity when the opener holding the lid horizontally moves away from the container opening, by the differential pressure between the inside pressure and the outside pressure of the semiconductor manufacturing apparatus, is set to be 0.06 ((m/s)Pa) or less; and

(f) transferring the semiconductor water to the inside of the semiconductor manufacturing apparatus, and processing the semiconductor wafer therein.

3. A method of manufacturing the semiconductor devices formed on the semiconductor wafer using the semiconductor container and the semiconductor manufacturing apparatus, according to claim 2 , wherein a pressure inside the semiconductor manufacturing apparatus is higher than a pressure outside of the semiconductor manufacturing apparatus when the apparatus opening is closed.

4. A method of manufacturing a plurality of semiconductor devices formed on a semiconductor wafer using a semiconductor container and a semiconductor manufacturing apparatus,

the semiconductor container having:

(i) a container body;

(ii) a container opening at a side portion of said container body;

(iii) a lid covering the container opening when the container opening is opposed,

the semiconductor manufacturing apparatus having:

an inside portion;

a stage portion;

a slider on the stage portion;

a wall partitioning between the inside portion and the stage portion;

an apparatus opening in the wall; and

an opener covering the apparatus opening when the apparatus opening is closed,

the manufacturing method comprising the steps of:

(a) accommodating the semiconductor wafer in the semiconductor container;

(b) closing the container opening including the semiconductor wafer with the lid;

(c) conveying the closed semiconductor container to the semiconductor manufacturing apparatus, and placing the closed semiconductor container on a stage of the semiconductor manufacturing apparatus;

(d) opposing the container opening to the apparatus opening in proximity to each other by the slider in such a manner that the opener holds the lid;

(e) connecting the openings by accommodating the opener together with the lid such that a velocity differential pressure ratio obtained by dividing the maximum velocity when the opener holding the lid horizontally moves away from the container opening, by the differential pressure between the inside pressure and the outside pressure of the semiconductor manufacturing apparatus, is set to be 0.06 ((m/s)/Pa) or less; and

(f) transferring the semiconductor wafer to the inside of the semiconductor manufacturing apparatus, and processing the semiconductor wafer therein.

5. A method of manufacturing the semiconductor devices formed on the semiconductor wafer using the semiconductor container and the semiconductor manufacturing apparatus, according to claim 4 , wherein a pressure inside the semiconductor manufacturing apparatus is higher than that a pressure outside of the semiconductor manufacturing apparatus when the apparatus opening is closed.

Assignments (4)
CHANGE OF ADDRESS Recorded Nov 29, 2017
From: RENESAS ELECTRONICS CORPORATION
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 044928/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 3, 2011
From: HITACHI PLANT TECHNOLOGIES, LTD.
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 027168/0256 →
CHANGE OF NAME Recorded Nov 3, 2011
From: HITACHI PLANT ENGINEERING & CONSTRUCTION CO., LTD.
To: HITACHI PLANT TECHNOLOGIES, LTD.
Reel/Frame 027172/0603 →
MERGER AND CHANGE OF NAME Recorded Sep 9, 2010
From: RENESAS TECHNOLOGY CORP.
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 024964/0180 →