Pb-Te-compounds doped with tin-antimony-tellurides for thermoelectric generators or peltier arrangements
View Patent ↗The invention relates to a thermoelectrically active p- or n-conductive semiconductor material constituted by a compound of the general formula (I) (PbTe) 1−x (Sn 2±y Sb 2±z Te 5 ) x (I) with 0.0001≦x≦0.5, 0≦y<2 and 0≦z<2, wherein 0 to 10% by weight of the compound may be replaced by other metals or metal compounds, wherein the semiconductor material has a Seebeck coefficient of at least |S|≧60 μV/K at a temperature of 25° C. and electrical conductivity of at least 150 S/cm and power factor of at least 5 μW/(cm·K 2 ), further relates to a process for the preparation of such semiconductor materials, as well as to generators and Peltier arrangements containing them.
1. A thermoelectrically active p- or n-type semiconductor material consisting of:
a compound of the general formula (I)
(PbTe) 1−x (Sn Q Sb R Te 5 ) x (I)
wherein 0.01≦x≦0.5, 1.5≦Q≦2.2, and 1.5≦R≦2.2, and
0-10% by weight of a dopant, wherein the dopant is selected from the group consisting of Na, K, Mg, Mn, Fe, Co, Ni, Tl, Si, Ge, As, Bi, S, Se, Pb-halides, Sb-halides, Bi-halides, Sb-tellurides, Tl-tellurides, and mixtures thereof.
2. A semiconductor material according to claim 1 , wherein 0.0001≦x≦0.1.
3. A semiconductor material according to claim 1 , wherein 0.0001≦x≦0.05.
4. A semiconductor material according to claim 1 , wherein x is about 0.02.
5. A semiconductor material according to claim 1 , comprising a compound of the formula
(PbTe) 1−x (Sn 2 Sb 2 Te 5 ) x
wherein x is from 0.01 to 0.05.
6. A semiconductor material according to claim 1 , comprising a compound of the formula
(PbTe) 1−x (Sn 1.8 Sb 2 Te 5 ) x
wherein x is from 0.01 to 0.1.
7. A semiconductor material according to claim 1 , comprising a compound of the formula
(PbTe) 1−x (Sn 2.2 Sb 2 Te 5 ) x
wherein x is from 0.01 to 0.1.
8. A semiconductor material according to claim 1 , comprising a compound of the formula
(PbTe) 1−x (Sn 2 Sb 2.2 Te 5 ) x
wherein x is from 0.01 to 0.1.
9. A semiconductor material according to claim 1 , comprising a compound of the formula
(PbTe) 1−x (Sn 1.5 Sb 2 Te 5 ) x
wherein x equals 0.01 to 0.1.
10. A semiconductor material according to claim 1 , comprising a compound of the formula
(PbTe) 1−x (Sn 2 Sb 1.5 Te 5 ) x
wherein x equals 0.01 to 0.1.
11. A semiconductor material according to claim 1 , comprising 0 to 5% by weight of the dopant.
12. A semiconductor material according to claim 1 , comprising 0 to 1% by weight of the dopant.
13. A semiconductor material according to claim 1 , comprising 0.05 to 1% by weight of the dopant.
14. A semiconductor material according to claim 1 , comprising 0.1 to 0.5% by weight of the dopant.
15. A semiconductor material according to claim 13 , wherein the dopant is selected from the group consisting of Bi, Se, Ge, As, and mixtures thereof.
16. A semiconductor material according to claim 15 , comprising 0.1 to 0.5% by weight Bi.
17. A semiconductor material according to claim 1 , wherein the material is characterized by a Seeback coefficient |S| that is greater than or equal 60 μV/K at a temperature of 25° C., an electrical conductivity of at least 150 S/cm, or a power factor of at least 5 μW/(cm·K 2 ).
18. A semiconductor material according to claim 17 , wherein the Seeback coefficient |S| is greater than or equal 80 μV/K, the electrical conductivity is at least 500 S/cm, or the power factor is at least 10 μW/(cm K 2 ).
19. A semiconductor material according to claim 17 , wherein the Seeback coefficient |S| is greater than or equal 100 μV/K, the electrical conductivity is at least 2000 S/cm, or the power factor is at least 15 μW/(cm·K 2 ).
20. A semiconductor material according to claim 1 , wherein the proportion of doping elements is from 10 18 to 10 20 charge carriers per cubic centimeter.
21. A thermoelectric generator or Peltier arrangement comprising a semiconductor material according to claim 1 .
22. A thermoelectric generator or Peltier arrangement comprising a semiconductor material according to claim 2 .
23. A thermoelectric generator or Peltier arrangement comprising a semiconductor material according to claim 22 .
24. A thermoelectric generator or Peltier arrangement comprising a semiconductor material according to claim 17 .
25. A thermoelectric generator or Peltier arrangement comprising a semiconductor material according to claim 18 .
26. A thermoelectric generator or Peltier arrangement comprising a semiconductor material according to claim 19 .
27. A thermoelectric generator or Peltier arrangement comprising a semiconductor material according to claim 20 .
28. A thermoelectrically active p- or n-type semiconductor material consisting essentially of:
a compound of the general formula (I)
(PbTe) 1−x (Sn Q Sb R Te 5 ) x (I)
wherein x is between about 0.01 and 0.1, Q is between about 1.5 and 2.2, and R is between about 1.5 and 2.2; and
0-10% by weight of a dopant, wherein the dopant is selected from the group consisting of Na, K, Mg, Mn, Fe, Co, Ni, Tl, Si, Ge, As, Bi, S, Se, Pb-halides, Sb-halides, Bi-halides, Sb-tellurides, Tl-tellurides, and mixtures thereof.
29. A thermoelectrically active p- or n-type semiconductor material consisting of:
a compound of the general formula (I)
(PbTe) 1−x (Sn Q Sb R Te 5 ) x (I)
wherein x is between about 0.01 and 0.5, Q is between about 1.5 and 2.2, and R is about 2; and
0-10% by weight of a dopant, wherein the dopant is selected from the group consisting of Na, K, Mg, Mn, Fe, Co, Ni, Tl, Si, Ge, As, Bi, S, Se, Pb-halides, Sb-halides, Bi-halides, Sb-tellurides, Tl-tellurides, and mixtures thereof.