Manufacturing method of semiconductor device
A method of manufacturing a semiconductor device including a die pad section, a first semiconductor chip having a surface on which a first electrode section is formed, a second semiconductor chip having a surface on which a second electrode section is formed, a support member having a surface, lead terminal sections, and a resin encapsulating body, the method including fixing a back surface of the first semiconductor chip and the surface of the support member to the die pad section; fixing a back surface of the second semiconductor chip to the surface of the first semiconductor chip and the surface of the support member; electrically connecting the first and second electrode sections respectively to the lead terminal sections; and sealing the die pad section, the first and second semiconductor chips and the support member with a resin.
1. A method of manufacturing a semiconductor device including a die pad section, a first semiconductor chip having a surface on which a first electrode section is formed, and a back surface opposite to the surface, a second semiconductor chip having a surface on which a second electrode section is formed and a back surface opposite to the surface, a support member having a surface and a back surface, lead terminal sections, and a resin encapsulating body, the method comprising:
fixing the back surface of the first semiconductor chip and the surface of the support member to the die pad section;
fixing the back surface of the second semiconductor chip to the surface of the first semiconductor chip and the surface of the support member;
electrically connecting the first and second electrode sections to the lead terminal sections respectively; and
sealing the die pad section, the first and second semiconductor chips and the support member with a resin.
2. The method according to claim 1 , further comprising:
preparing a first semiconductor wafer having circuit forming regions and circuit non-forming regions;
forming an electric circuit in each of the circuit forming regions of the first semiconductor wafer; and
separating each of the circuit forming regions of the first semiconductor wafer and each of the circuit non-forming regions thereof as the first semiconductor chip and the support member, respectively, in an integral state.
3. The method according to claim 2 , further comprising:
preparing a second semiconductor wafer having circuit forming regions and circuit non-forming regions;
forming an electric circuit in each of the circuit forming regions of the second semiconductor wafer; and
separating the circuit forming regions and the circuit non-forming regions of the second semiconductor wafer and forming each of the circuit forming regions as a second semiconductor chip.
4. The method according to claim 1 , wherein upon connection of the first and second electrode sections to the lead terminal sections, metal wires are adhered to the first and second electrode sections by supersonic vibrations.