Gas sensitive field-effect-transistor
View Patent ↗A gas sensitive field effect transistor comprises a semiconductor substrate that includes a capacitance well, and source and drain regions of a field effect transistor. A gate of the field effect transistor is separated from the semiconductor substrate by an insulator, and a gas sensitive layer separated from the gate by an air gap. The field effect transistor provides an output signal indicative of the presence of a target gas within the air gap to an amplifier, which provides an amplified output signal that is electrically coupled to the capacitance well.
1. A gas-sensitive field-effect transistor (FET) comprising:
a semiconductor substrate;
a gate electrode that includes a gas-sensitive layer;
an air gap between the gas-sensitive layer and the semiconductor substrate;
a noncontacting floating gate electrode that is capacitively coupled to the gate electrode;
a field-effect transistor that includes the floating gate electrode, a source and a drain, and provides a sensed signal indicative of the electrical potential on the floating gate electrode;
an amplifier that receives the sensed signal and that-provides an amplified sensed signal; and
a reference electrode, which together with the floating gate electrode forms a capacitance C W , and that is electrically coupled to the amplified sensed signal.
2. The gas-sensitive field-effect transistor (FET) of claim 1 , where an electronic circuit to reduce parasitic components is integrated into the semiconductor substrate.
3. The gas-sensitive field-effect transistor (FET) of claim 2 , where in order to read out the potential of the floating gate electrode, a control electrode in coupling connection with the floating gate electrode is provided, the potential decoupled from the floating gate electrode can be supplied to the amplifier, and the amplified sensed signal is applied to the reference electrode in order to control the latter.
4. A gas-sensitive field effect transistor, comprising:
a semiconductor substrate that includes a capacitance well, and source and drain regions of a field effect transistor;
a gate of the field effect transistor separated from the semiconductor substrate by an insulator;
a gas sensitive layer separated from the gate by an air gap;
an amplifier that receives an output signal from the field effect transistor and provides an amplified output signal that is electrically coupled to the capacitance well;
where the output signal is indicative of the presence of a target gas within the air gap.
5. The gas sensitive field effect transistor of claim 4 , where the substrate is a silicon substrate.