Thin film transistor, flat panel display device, and method of fabricating the same
A thin film transistor, a flat panel display device including the same, and a method of fabricating the same. An uneven structure is formed at a part of a polycrystalline silicon layer pattern corresponding to a channel region to form a channel length at the edge of the channel region longer than a main channel length, so that a resistance at the edge of the channel region increases to cause an amount of current flowing through the edge of the channel region to decrease, thereby enhancing the reliability of a circuit at low voltage driving.
1. A thin film transistor, comprising:
a semiconductor layer pattern on a substrate;
a gate electrode having a flat top surface crossing a center of the semiconductor layer pattern;
source and drain electrodes connected to the semiconductor layer pattern; and
a channel region defined by an overlap of the semiconductor layer pattern and the gate electrode,
wherein a channel length of a side edge of the channel region is different from a channel length of a center of the channel region, the side edge of the channel region comprising a plurality of indentations, and
wherein the channel length of the center of the channel region is substantially the same as a width of the gate electrode.
2. The thin film transistor according to claim 1 , wherein the channel length of the edge of the channel region is longer than the channel length of the center.
3. The thin film transistor according to claim 1 , wherein the semiconductor layer pattern comprises an uneven structure at an edge of a center of the semiconductor layer pattern.
4. The thin film transistor according to claim 3 , wherein the uneven structure is formed to correspond to the edge of the channel region.
5. The thin film transistor according to claim 3 , wherein the uneven structure comprises a pointed part.
6. The thin film transistor according to claim 3 , wherein the uneven structure is formed in a shape of a sinusoidal wave.
7. The thin film transistor according to claim 3 , wherein the uneven structure comprises a rectangular part.
8. A thin film transistor, comprising:
a semiconductor layer pattern on a substrate and having a plurality of indentations at an edge of a center of the semiconductor layer pattern;
a gate electrode having a flat top surface crossing the center of the semiconductor layer pattern forming a channel region; and
source and drain electrodes connected to the semiconductor layer pattern, and
wherein a channel length of a center of the channel region is substantially the same as a width of the gate electrode.
9. The thin film transistor according to claim 8 , wherein the uneven structure is formed at a crossing of the semiconductor layer pattern and the gate electrode.
10. The thin film transistor according to claim 8 , wherein the uneven structure comprises a pointed part.
11. The thin film transistor according to claim 8 , wherein the uneven structure is formed in a shape of a sinusoidal wave.
12. The thin film transistor according to claim 8 , wherein the uneven structure comprises a rectangular part.
13. The thin film transistor according to claim 8 , wherein the thin film transistor is a P-type metal oxide semiconductor (PMOS) thin film transistor or an N-type MOS (NMOS) thin film transistor.
14. A flat panel display device, comprising:
a thin film transistor including a semiconductor layer pattern, a gate electrode having a flat top surface crossing the semiconductor layer pattern, a channel region defined by a crossing of the semiconductor layer pattern and the gate electrode, and source and drain electrodes connected to the semiconductor layer pattern on a substrate;
a pixel electrode connected to one of the source and drain electrodes;
an organic layer including at least an emission layer and connected to the pixel electrode; and
a common electrode connected to the organic layer,
wherein a channel length of a side edge of the channel region is different from a channel length of a center of the channel region, the side edge of the channel region comprising a plurality of indentations, and
wherein the channel length of the center of the channel region is substantially the same as a width of the gate electrode.
15. The flat panel display device according to claim 14 , wherein an uneven structure is formed at an edge of a center of the semiconductor layer pattern such that the channel length of the edge of the channel region is longer than the channel length of the center of the channel region.
16. The flat panel display device according to claim 14 , wherein the thin film transistor is a P-type metal oxide semiconductor (PMOS) thin film transistor or an N-type MOS (NMOS) thin film transistor.