Insulator system for a terminal structure of an ion implantation system

1. An ion implantation system comprising:

an ion source configured to provide an ion beam;

a terminal structure defining a cavity, said ion source at least partially disposed within said cavity; and

an insulator system to electrically insulate said terminal structure, said insulator system configured to provide an effective dielectric strength greater than about 72 kilovolts (kV)/inch in a region proximate at least one exterior surface of said terminal structure, wherein said insulator system comprises a solid insulator coupled to a junction of upstanding sidewalls with a top of said terminal structure.

2. The ion implantation system of claim 1 , further comprising an acceleration power supply configured to energize said terminal structure to at least 200 kV.

3. The ion implantation system of claim 2 , wherein said acceleration power supply is configured to energize said terminal structure to 600 kV.

4. The ion implantation system of claim 1 , wherein said insulator system comprises another solid insulator coupled to a junction of the upstanding sidewalls with a bottom of said terminal structure.

5. The ion implantation system of claim 1 , wherein said solid insulator comprises syntactic foam.

6. The ion implantation system of claim 1 , wherein said solid insulator comprises polyethylene, polytetrafluoroethylene (PTFE), chlorinated polyvinyl chloride (CPVC), polyvinylidene difluoride (PVDF), silicone, or epoxy.

7. The ion implantation system of claim 1 , wherein said solid insulator defines an internal cavity, and said insulator system further comprises a gas disposed in said internal cavity.

8. The ion implantation system of claim 7 , wherein said gas comprises pressurized air.

9. The ion implantation system of claim 1 , wherein a portion of the upstanding sidewalls forms a door, said door when open configured to provide access to said cavity of said terminal structure.

10. The ion implantation system of claim 1 , further comprising a mass analyzer positioned downstream of said ion source, said mass analyzer configured to remove undesired species from said ion beam, and said ion implantation system further comprising a gas box configured to provide gas to be ionized in said ion source, said gas box also at least partially disposed within said cavity.

11. The ion implantation system of claim 10 , further comprising a gas box insulator system configured to electrically insulate said gas box, said gas box insulator system comprising at least one insulator having a dielectric strength greater than about 72 kilovolts (kV)/inch.

12. The ion implantation system of claim 11 , wherein said at least one insulator of said gas box insulator system comprises a solid insulator having at least one side contacting an associated exterior surface of said gas box.

13. An ion implantation system comprising:

an ion source configured to provide an ion beam;

a gas box configured to provide gas to be ionized in said ion source;

a terminal structure defining a cavity, said ion source and said gas box at least partially disposed within said cavity;

a terminal structure insulator system to electrically insulate said terminal structure, said terminal structure insulator system configured to provide an effective dielectric strength greater than about 72 kilovolts (kV)/inch in a region proximate at least one exterior surface of said terminal structure, wherein said terminal structure insulator system comprises a solid insulator coupled to a junction of upstanding sidewalls with a top of said terminal structure;

a gas box insulator system configured to electrically insulate said gas box, said gas box insulator system comprising a second solid insulator having at least one side contacting an associated exterior surface of said gas box;

a mass analyzer positioned downstream of said ion source, said mass analyzer configured to remove undesired species from said ion beam; and

an end station positioned downstream of said mass analyzer, said end station comprising a platen having a surface to support a wafer thereon.

14. The ion implantation system of claim 13 , wherein said second solid insulator of said gas box insulator system comprises a base, a first upstanding sidewall coupled to one end of said base, a second upstanding sidewall coupled to another end of said base, and a top coupled to said first and second upstanding sidewalls, wherein said base, said first and second upstanding sidewall, and said top contact associated exterior surfaces of said gas box.