IP Library Granted Patent US 7,540,919
Granted Patent B2
US 7,540,919 · App. 11/394,970 · Granted Jun 2, 2009

Solidification of crystalline silicon from reusable crucible molds

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Quick Facts
Patent No.
US 7,540,919
App. No.
11/394,970
Filed
Mar 31, 2006
Granted
Jun 2, 2009
Kind
B2
Art Unit
1792
USPC
117/95
Abstract

A process for making silicon ingots using a multi-part, reusable, graphite crucible of at least two mold pieces configured for assembly into an open top mold having an interior surface functional as a mold cavity for receiving molten silicon; removing or reducing a prior applied release coating from the interior surface until a uniformly smooth finish is achieved; coating the interior surface with a first layer of release coating comprising silicon nitride; coating the interior surface with a second layer of release coat comprising silica suspended in water; coating the interior surface with a third layer of release coat comprising silicon nitride; curing the release coat on said crucible; casting a silicon ingot in the crucible; and then repeating the prior steps multiple times.

Claims (45)

1. A coating process for applying a multi-layer release coat to an interior surface of a reusable crucible for producing silicon ingots comprising:

removing any prior applied release coating from the interior surface until a uniformly smooth finish is achieved;

applying at least a first layer of a release coating of silicon nitride to the interior surface;

applying a second layer of a release coating of silica suspended in water to the interior surface;

applying a third layer of release coating of silicon nitride to the interior surface wherein the final full release coating has a thickness of 75 to 1500 microns; and

curing the release coating onto the crucible.

2. The coating process of claim 1 wherein the release coating is applied by a method selected from the group consisting of spraying, squeegee coating, roller coating, and a combination thereof.

3. The coating process of claim 1 wherein the first and third layers of the release coating of silicon nitride are dispersed in an aqueous media.

4. The coating process of claim 3 wherein the aqueous media contains a binder selected from the group consisting of cellulose ether, paraffin, acetone, polymers of propylene oxide, poly vinyl alcohol, and a combination thereof.

5. The coating process of claim 1 wherein the first and third layers of the release coating of silicon nitride are dispersed in a non-aqueous media.

6. The coating process of claim 5 wherein the non-aqueous media contains a binder selected from the group consisting of cellulose ether, paraffin, acetone, polymers of propylene oxide, poly vinyl alcohol, and a combination thereof.

7. The coating process of claim 1 wherein the silica suspended in water contains a surfactant.

8. The coating process of claim 1 wherein the silica suspended in water contains a binder.

9. The coating process of claim 1 further comprising drying of each of the release coating layers prior to application of a subsequent release coating layer.

10. The coating process of claim 1 further comprising maintaining the crucible at a temperature of 50° to 200° C.

11. The coating process of claim 1 further comprising curing the crucible in air at an elevated temperature for a period of time.

12. The coating process of claim 11 wherein the elevated temperature is not more than 600° C.

13. The coating process of claim 11 wherein the period of time is at least 3 to 15 hours.

14. The coating process of claim 1 further comprising curing the crucible in an inert gas at slightly above ambient pressure or flowing gas pressure.

15. The coating process of claim 14 wherein the inert gas is selected from the group consisting of Ar, He, N 2 , and a combination thereof.

16. The coating process of claim 14 further comprising curing the crucible at an elevated temperature for a period of time.

17. The coating process of claim 16 wherein the elevated temperature is between 600-1500° C.

18. The coating process of claim 16 wherein the period of time is about 10 hours.

19. A process for making a silicon ingot, comprising:

using a reusable crucible having an interior surface that functions as a mold cavity for receiving molten silicon;

removing any prior applied release coating from the interior surface until a uniformly smooth finish is achieved;

coating at least the interior surface with a release coating comprising silicon nitride, said step of coating comprising:

applying at least a first layer of a release coating of silicon nitride to the interior surface;

applying a second layer of a release coating of silica suspended in water to the interior surface;

applying a third layer of release coating of silicon nitride to the interior surface wherein the final full release coating has a thickness of 75 to 1500 microns;

curing the release coating onto the crucible;

receiving the molten silicon into the cavity of the reusable crucible;

casting a silicon ingot in the crucible; and

repeating the prior steps at least once.

20. A process for making a silicon ingot using directional solidification comprising:

using a reusable crucible having an interior surface that functions as a cavity for receiving silicon for melting;

removing any prior applied release coating from the interior surface until a uniformly smooth finish is achieved;

coating at least the interior surface with a release coating comprising silicon nitride, said step of coating comprising:

applying at least a first layer of a release coating of silicon nitride to the interior surface;

applying a second layer of a release coating of silica suspended in water to the interior surface;

applying a third layer of release coating of silicon nitride to the interior surface wherein the final full release coating has a thickness of 75 to 1500 microns;

loading the silicon for melting into the cavity of reusable crucible;

conducting a heat-up cycle under vacuum until attaining a temperature of at least 1200° C.;

introducing a mixture comprising Ar and N 2 , wherein the N 2 comprises between 5 and 10% of the mixture; and

continuing the melting and directional solidification process until growth of the silicon ingot is completed.

Assignments (16)
RELEASE OF SECURITY INTEREST Recorded May 16, 2017
From: UMB BANK, NATIONAL ASSOCIATION
To: GTAT CORPORATION
Reel/Frame 042479/0517 →
SECURITY INTEREST Recorded Mar 25, 2016
From: GTAT CORPORATION
To: UMB BANK, NATIONAL ASSOCIATION
Reel/Frame 038260/0341 →
RELEASE OF SECURITY INTEREST Recorded Oct 30, 2013
From: BANK OF AMERICA, N.A.
To: GTAT CORPORATION; GT CRYSTAL SYSTEMS, LLC; GT ADVANCED CZ LLC
Reel/Frame 031516/0023 →
SECURITY AGREEMENT Recorded Feb 15, 2012
From: GTAT CORPORATION; GT CRYSTAL SYSTEMS, LLC; GT ADVANCED CZ LLC
To: BANK OF AMERICA, N.A.
Reel/Frame 027712/0283 →
CHANGE OF NAME Recorded Jan 18, 2012
From: GT SOLAR INCORPORATED
To: GTAT CORPORATION
Reel/Frame 027552/0859 →
RELEASE OF LIEN ON PATENTS RECORDED AT REEL/FRAMES 025497/0514 AND 025497/0406 Recorded Nov 22, 2011
From: CREDIT SUISSE AG, AS COLLATERAL AGENT
To: GT CRYSTAL SYSTEMS, LLC; GTAT CORPORATION (F/K/A GT SOLAR INCORPORATED)
Reel/Frame 027272/0278 →
SECURITY AGREEMENT Recorded Dec 14, 2010
From: GT SOLAR INCORPORATED
To: CREDIT SUISSE AG AS ADMINISTRATIVE AGENT
Reel/Frame 025497/0406 →
TERMINATION OF SECURITY INTEREST IN PATENTS Recorded Sep 10, 2010
From: BANK OF AMERICA, N.A., AS ADMINISTRATIVE AGENT
To: GT SOLAR INCORPORATED
Reel/Frame 024964/0263 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 7, 2008
From: PARTHASARATHY, SANTHANA RAGHAVAN; WAN, YUEPENG; CHARTIER, CARL; TALBOTT, JONATHAN A.; GUPTA, KEDAR P.
To: GT SOLAR INCORPORATED
Reel/Frame 021800/0398 →
TERMINATION OF SECURITY INTEREST IN PATENTS Recorded Aug 26, 2008
From: CITIZENS BANK NEW HAMPSHIRE
To: GT SOLAR INCORPORATED
Reel/Frame 021439/0142 →
NOTICE OF GRANT OF SECURITY INTEREST IN PATENTS Recorded Jul 30, 2008
From: GT SOLAR INCORPORATED
To: BANK OF AMERICA, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 021311/0953 →
RELEASE Recorded May 1, 2007
From: SILICON VALLEY BANK
To: GT EQUIPMENT TECHNOLOGIES, INC.
Reel/Frame 019246/0080 →
SECURITY AGREEMENT Recorded Apr 27, 2007
From: GT SOLAR INCORPORATED
To: CITIZENS BANK NEW HAMPSHIRE
Reel/Frame 019215/0856 →
CHANGE OF NAME Recorded Oct 30, 2006
From: GT EQUIPMENT TECHNOLOGIES, INC.
To: GT SOLAR INCORPORATED
Reel/Frame 018442/0976 →
SECURITY AGREEMENT Recorded May 12, 2006
From: GT EQUIPMENT TECHNOLOGIES, INC.
To: SILICON VALLEY BANK
Reel/Frame 017606/0234 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 9, 2006
From: PARTHASARATHY, SANTHANA RAGHAVAN; WAN, YUEPENG; CHARTIER, CARL; TALBOTT, JONATHAN A.; GUPTA, KEDAR P.
To: GT EQUIPMENT TECHNOLOGIES, INC.
Reel/Frame 017591/0014 →