IP Library Granted Patent US 7,738,059
Granted Patent B2
US 7,738,059 · App. 11/395,433 · Granted Jun 15, 2010

Thin film transistor panel having passivation layer overlapping TFT with color filter and black matrix formed on passivation layer where black matrix partitions color filter

Assignee: Samsung Electronics Co., Ltd.
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Quick Facts
Patent No.
US 7,738,059
App. No.
11/395,433
Granted
Jun 15, 2010
Kind
B2
Abstract

A thin film transistor panel, a liquid crystal display having the same, and a method of manufacturing the thin film transistor panel are provided. The thin film transistor includes a gate line formed on an insulating substrate in a predetermined direction, a data line crossing the gate line, a thin film transistor connected to the gate line and the data line, a black matrix formed to overlap at least a portion of the gate line, the data line, and the thin film transistor, a color filter formed in a region partitioned by the black matrix, and a pixel electrode formed on the color filter and electrically connected to the thin film transistor.

Claims (39)

1. A thin film transistor panel comprising:

a gate line formed on an insulating substrate in a predetermined direction;

a data line crossing the gate line;

a thin film transistor connected to the gate line and the data line;

a passivation layer formed on the thin film transistor;

a black matrix formed on the passivation layer to overlap at least a portion of the gate line, the data line, and the thin film transistor;

a color filter formed in a region partitioned by the black matrix; and

a pixel electrode formed on the color filter and electrically connected to the thin film transistor.

2. The thin film transistor panel of claim 1 , wherein the color filter is formed using an inkjet process.

3. The thin film transistor panel of claim 2 , wherein the black matrix is formed of an organic material that is non-hygroscopic with respect to the color filter.

4. The thin film transistor panel of claim 1 , wherein the thin film transistor comprises:

a gate electrode connected to the gate line;

a source electrode connected to the data line; and

a drain electrode connected to the pixel electrode,

wherein the pixel electrode and the drain electrode are electrically connected through a contact hole.

5. The thin film transistor panel of claim 4 , wherein the height of the portion of the black matrix in which the contact hole is formed is smaller than that of the black matrix formed in the region that overlaps the gate line or the data line.

6. The thin film transistor panel of claim 4 , wherein the black matrix is formed to have a step difference between a region in which the contact hole is formed and a region other than the region in which the contact hole is formed.

7. The thin film transistor panel of claim 4 , wherein the black matrix that is formed in the region in which the contact hole is formed has a hollow shape to receive the contact hole.

8. A liquid crystal display comprising:

an upper panel on which a common electrode is formed; and

a lower panel formed to face the upper panel and including:

a gate line formed on an insulating substrate in a predetermined direction;

a data line crossing the gate line;

a thin film transistor connected to the gate line and the data line;

a passivation layer formed on the thin film transistor;

a black matrix formed on the passivation layer;

a color filter formed in a region partitioned by the black matrix; and

a pixel electrode formed on the color filter and electrically connected to the thin film transistor.

9. The liquid crystal display of claim 8 , wherein the black matrix is formed to overlap at least a portion of the thin film transistor, the gate line, and the data line.

10. The liquid crystal display of claim 8 , wherein the color filter is formed using an inkjet process.

11. The liquid crystal display of claim 10 , wherein the black matrix is formed of an organic material that is non-hygroscopic with respect to the color filter.

12. The liquid crystal display of claim 8 , wherein the thin film transistor comprises:

a gate electrode connected to the gate line;

a source electrode connected to the data line; and

a drain electrode connected to the pixel electrode,

wherein the pixel electrode and the drain electrode are electrically connected through a contact hole that perforates a portion of the black matrix that is formed in a region that overlaps the thin film transistor.

13. The liquid crystal display of claim 12 , wherein the height of the portion of the black matrix that is perforated by the contact hole and is formed in the region that overlaps the thin film transistor is smaller than that of the black matrix formed in the region that overlaps the gate line or the data line.

14. The liquid crystal display of claim 12 , wherein the black matrix is formed to have a step difference between a region in which the contact hole is formed and a region other than the region in which the contact hole is formed.

15. The liquid crystal display of claim 12 , wherein the black matrix that is formed in the region that overlaps the thin film transistor has a hollow shape to receive the contact hole.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 22, 2012
From: SAMSUNG ELECTRONICS CO., LTD.
To: SAMSUNG DISPLAY CO., LTD.
Reel/Frame 029008/0448 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 30, 2006
From: KIM, JANG-SOO
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 017715/0485 →
Priority Claims (1)
KR 10-2005-0038058 · May 6, 2005 · national
Continuity (1)
Related Publication 20060250536A1 · Nov 9, 2006