Semiconductor device based on a SCR
View Patent ↗The present invention provides a semiconductor structure device having a first and a second semiconductor devices with a silicon controlled rectifier (SCR) formed between the two devices with advantages to couple the devices to provide more design flexibility and enhanced triggering in order to improve the ESD performance of the device.
1. A semiconductor circuit comprising:
at least two semiconductor devices, wherein a silicon controlled rectifier is formed between the at least two semiconductor devices, said at least two semiconductor devices are coupled together with at least one coupling device, wherein said at least one coupling device is not part of the silicon controlled rectifier;
at least a first voltage potential and at least a second voltage potential coupled to the two devices.
2. The structure of claim 1 wherein said devices are at least one of a diode, a MOS, a resistor, a capacitor, a inductor.
3. The structure of claim 1 wherein said devices are coupled in series.
4. The structure of claim 1 wherein said first device is coupled to the first potential and the second device is coupled to the second potential.
5. The structure of claim 1 wherein said first device is coupled between the first potential and the second potential.
6. The structure of claim 5 further comprising a third potential and a fourth potential, wherein said second device is coupled between the third potential and the fourth potential.
7. The structure of claim 1 wherein said coupling device controls the trigger voltage of the silicon controlled rectifier.
8. A semiconductor structure comprising:
a first lightly doped region of a first conductivity type formed in a second lightly doped region of a second conductivity type
a third lightly doped region of the first conductivity type formed in the second lightly doped region of the second conductivity type;
a first heavily doped region of the second conductivity type and a fourth heavily doped region of the first conductivity type formed in the first lightly doped region, a second heavily doped region of the first conductivity type and a fifth heavily doped region of the second conductivity type formed in the third lightly doped region; wherein an SCR is formed between the first heavily doped region and the third lightly doped region, said first heavily doped region is coupled to a first voltage potential and said third lightly doped region is coupled to a second voltage potential, said first and fourth heavily doped region form a first semiconductor device and said second and fifth heavily doped region form a second semiconductor device, wherein said first semiconductor device and said second semiconductor device are coupled together with at least one coupling device, said at least one coupling device is not part of the SCR.
9. The structure of claim 8 further comprising:
a third heavily doped region of the second conductivity type formed in the second lightly doped region.
10. The structure of claim 8 wherein said first semiconductor device is a first diode and said second semiconductor device is a second diode.
11. The structure of claim 10 wherein the first diode is coupled to a first potential and the second diode is coupled to a second potential.
12. The structure of claim 11 wherein said first diode and the second diode form an SCR as an ESD protection circuit between the first and the second potential.
13. The structure of claim 11 wherein the first diode is coupled to the first potential by a at least one diode.
14. The structure of claim 11 wherein the first and the second diodes are coupled together through at least one trigger device.
15. The structure of claim 14 wherein the trigger device comprise at least one of a MOS, a diode, a capacitor, an inductor, and a resistor.
16. The structure of claim 10 wherein said first diode is coupled between the first potential and the second potential.
17. The structure of claim 10 further comprising a third potential and a fourth potential, wherein said second element is coupled between the third potential and the fourth potential.
18. The structure of claim 8 wherein said coupling device controls the trigger voltage of the silicon controlled rectifier.