Lead frame and semiconductor device
View Patent ↗A lead frame is provided. Although there is a die pad ( 2 ) located to deviate from a main plane center line of a resin molding area ( 10 ), a die pad connecting portion ( 6 ) is located to deviate from the main plane center line of the resin molding area in a direction opposite to the deviation direction of the deviated die pad ( 2 ), so that it is possible to reduce a Z-directional vertical variation of the die pad in processes. Accordingly, it is possible to prevent resin molding defects such as package bending, voids, failure of resin filling, wire disconnection, exposure of semiconductor chips, and exposure of die pads.
1. A lead frame for a multi-chip package mounted with two semiconductor chips, the lead frame comprising:
a frame;
two die pads differing in size and mounting thereon the semiconductor chips respectively;
suspension leads supporting the die pads to the frame;
a die pad connecting portion connecting the die pads; and
leads supported to the frame and connected to terminals formed on the semiconductor chips by means of metal wires, wherein
one of the two die pads and the die pad connecting portion are arranged to satisfy a positional relationship that a main plane center line of the one die pad deviates by a given distance from a main plane center line of a resin molding area, the main plane center line of the resin molding area passing the two die pads, and that a main plane center line of the die pad connecting portion is aligned with the main plane center line of the resin molding area or located on an opposite side to the main plane center line of the one die pad with respect to the main plane center line of the resin molding area.
2. The lead frame according to claim 1 , wherein a main plane center line of the other of the die pads is aligned with the main plane center line of the resin molding area, and an area of the other die pad is larger than an area of the one die pad.
3. The lead frame according to claim 1 , wherein
the die pad connecting portion has a width and a length that are smaller than widths and lengths of the respective two die pads, and is shaped as a narrow portion being recessed on both sides thereof, and
the main plane center lines of the resin molding area, the other of the two die pads, and the die pad connecting portion are aligned to coincide with each other.
4. The lead frame according to claim 1 , wherein the suspension lead supporting the die pad located to deviate from the main plane center line of the resin molding area has a bent portion in a vicinity of the die pad, and the suspension lead for supporting the die pad having a main plane center line aligned with the main plane center line of the resin molding area has a shape of a straight line.
5. The lead frame according to claim 4 , wherein
the suspension lead supporting the die pad located to deviate from the main plane center line of the resin molding area has a bent portion in a vicinity of the die pad,
a width-enlarged portion is provided between the bent portion and a die pad supporting portion in the vicinity of the die pad, the width-enlarged portion having a width larger than that of the suspension lead, and
the width-enlarged portion of the suspension lead in a direction opposite to the deviation of the die pad has a larger length than the width-enlarged portion of the suspension lead in a direction of the deviation of the die pad.
6. A semiconductor device including the lead frame according to claim 1 , wherein one of the two die pads located within the lead frame and differing in size deviates toward a resin injection hole with respect to the main plane center line of the resin molding area, the one die pad being on a side close to the resin injection hole.
7. The semiconductor device according to claim 6 , wherein a longest metal wire is located in a downstream region of a molding resin flow than the die pad located to deviate from the main plane center line of the resin molding area.
8. The semiconductor device according to claim 6 , wherein the semiconductor device has a resin thickness in a range of from 1.4 mm to 0.7 mm.
9. The semiconductor device according to claim 6 , wherein one of the two die pads differing in size and located close to the resin injection hole has a Z-directional vertical variation having an inclination slanting from a position close to the resin injection hole to a position apart from the resin injection hole, and an amount of the variation is not more than 0.10 mm.