Thin film transistor having silicon nanowire and method of fabricating the same

1. A method of fabricating a thin film transistor, comprising:

disposing a silicon nanowire on a substrate, the silicon nanowire having a central portion and respective side portions of the central portion;

forming a gate electrode on the central portion;

forming a source electrode and a drain electrode spaced apart from the source electrode on respective side portions, the source electrode and the drain electrode electrically connected to the silicon nanowire; and forming a fixing layer between the silicon nanowire and the source electrode and between the silicon nanowire and the drain electrode, the fixing layer fixing the silicon nanowire to the substrate.

2. The method according to claim 1 , wherein forming the fixing layer includes forming first and second contact holes that expose portions of the source and drain electrodes, and the source and drain electrodes are connected to the silicon nanowire via the first and second contact holes, respectively.

3. The method according to claim 1 , wherein the silicon nanowire is disposed on the substrate by spraying.

4. The method according to claim 1 , further comprising forming the silicon nanowire by depositing a catalyzer having a nanoscale size and by crystallizing the catalyzer using a reactive gas including a silicon.

5. The method according to claim 1 , wherein the gate electrode is formed through the same process as the source and drain electrodes.

6. A method of fabricating an array substrate for a flat panel display device, comprising:

disposing a silicon nanowire on a substrate, the silicon nanowire having a central portion and respective side portions of the central portion;

forming a fixing layer on the central portion of the silicon nanowire and the substrate, wherein the fixing layer acts as fixing the silicon nanowire to the substrate;

forming first and second contact holes to expose respective side portions of the silicon nanowire by etching the fixing layer;

forming first source and drain electrodes connected to the silicon nanowire via the first and second contact holes, respectively, and a gate electrode disposed between the first source and drain electrodes;

forming a gate insulating layer on the substrate including the first source and drain electrodes and the gate electrode;

forming third and fourth contact holes to expose the first source and drain electrodes, respectively, by etching the gate insulating layer;

forming a second source electrode connected to the first source electrode via the third contact hole and a second drain electrode connected to the first drain electrode via the fourth contact hole; and

forming a pixel electrode connected to the second drain electrode.

7. The method according to claim 6 , further comprising forming a passivation layer between the second source electrode and the pixel electrode and between the second drain electrode and the pixel electrode, the passivation layer including a drain contact hole that exposes a portion of the second drain electrode.

8. The method according to claim 7 , wherein the pixel electrode is connected to the second drain electrode via the drain contact hole.

9. A method of fabricating a thin film transistor, comprising:

coating a solvent including a silicon nanowire on a substrate, the silicon nanowire having a central portion and respective side portions of the central portion;

removing the solvent from the substrate except the silicon nanowire;

sequentially forming a gate insulating layer and a gate electrode on the central portion;

forming a source electrode and a drain electrode spaced apart from the source electrode on respective side portions, the source and drain electrodes directly contacting the silicon nanowire; forming a fixing layer between the central portion of the silicon nanowire and the gate insulating layer, wherein the fixing layer acts as fixing the silicon nanowire to the substrate.

10. The method according to claim 9 , wherein the solvent further includes a surfactant.

11. The method according to claim 10 , wherein the solvent is removed through heating.

12. The method according to claim 11 , wherein heating is performed under a temperature less than about 100 degree Celsius.

13. A method of fabricating an array substrate for a flat panel display device, comprising:

coating a solvent including a silicon nanowire on a substrate, the silicon nanowire having a central portion and respective side portions of the central portion;

removing the solvent from the substrate except the silicon nanowire;

forming a fixing layer on the central portion of the silicon nanowire and the substrate, wherein the fixing layer acts as fixing the silicon nanowire to the substrate;

sequentially forming a gate insulating layer and a gate electrode on the fixing layer;

forming a first source electrode and a first drain electrode spaced apart from the first source electrode on respective side portions, the first source and first drain electrodes directly contacting the silicon nanowire;

forming an interlayer insulating film having first and second contact hole to expose the first source and drain electrodes, respectively, on the substrate;

forming a second source electrode connected to the first source electrode via the first contact hole and a second drain electrode connected to the first drain electrode via the second contact hole; and

forming a pixel electrode connected to the second drain electrode.