Thin film transistor, integrated circuit, liquid crystal display, method of producing thin film transistor, and method of exposure using attenuated type mask

1. A method of producing a thin film transistor, comprising:

a step of forming contact holes on a photosensitive material film provided on a glass base plate after irradiating said photosensitive material film with a ray through a mask and then developing said photosensitive material film;

wherein said ray is an i-ray;

wherein said mask pattern for exposing contact holes of said mask is a contact hole pattern including either one of a rectangular light transmitting area and a light screening area; and

wherein said rectangular pattern is a pattern having long and short sides with length dimensions, the length dimension in the direction of the long sides being longer than or equal to 1.4 times the length dimension in the direction of the short sides.

2. The method of claim 1 , wherein the contact holes formed in said photosensitive material film have a rectangular planar shape with at least each corner arc-shaped.

3. A method of producing a thin film transistor comprising a step of making a ray from a light source enter an optical system through a mask, and irradiating a photosensitive material film provided on the surface of a glass base plate with a ray having passed said optical system to expose said photosensitive film,

wherein said ray is an i-ray;

wherein said mask is a light-screening chrome mask, and a mask pattern formed by said chrome mask for forming contact holes of the thin film transistor formed on said glass plate is either one of a rectangular light transmitting area and a light screening area; and

wherein said optical system is a projection optical system of equal magnification and has the numerical aperture NA which is obtained by the following formula when k 1 is a factor having a value between 0.40 and 0.43 and R is the length dimension in the direction of the short sides of said rectangle:

NA 2 =k 1×0.365 /R.

4. A method of producing a thin film transistor comprising a step of making a ray from a light source enter an optical system through a mask, irradiating a photosensitive material film provided on a glass base plate with a ray having passed said optical system to expose said photosensitive film,

wherein said ray is an i-ray;

wherein said mask is an attenuated type mask, and the mask pattern of said attenuated type mask is either one of a rectangular light transmitting area and a light screening area; and

wherein said optical system is a projection optical system of equal magnification and has the numerical aperture NA which is obtained by the following formula when k 1 is a factor having a value between 0.34 and 0.41 and R is the length dimension in the direction of the short sides of said rectangle:

NA 2 =k 1×0.365 /R.

5. The method of claim 1 , wherein in said mask pattern for forming said contact holes either one of said light transmitting area and said light screening area is disposed by a periodical pattern in which a pitch in the direction of the long sides of said rectangle is as long as or longer than the sum of the length dimension of a long side and the length dimension of a short side of said rectangle, and a pitch in the direction of the short sides of said rectangle is triple as long as or longer than the length dimension of the short side of said rectangle.

6. The method of claim 3 , wherein in said mask pattern for forming said contact holes either one of said light transmitting area and said light screening area is disposed in a periodical pattern in which a pitch in the direction of the long sides of said rectangle is as long as or longer than the sum of the length dimension of a long side and the length dimension of a short side of said rectangle, and a pitch in the direction of the short sides of said rectangle is triple as long as or longer than the length dimension of the short side of said rectangle.

7. The method of claim 4 , wherein in said mask pattern for forming said contact holes either one of said light transmitting area and said light screening area is disposed by a periodical pattern in which a pitch in the direction of the long sides of said rectangle is equal to or greater than the sum of the length dimension of a long side and the length dimension of a short side of said rectangle, and a pitch in the direction of the short sides of said rectangle is triple as long as or longer than the length dimension of the short side of said rectangle.

8. The method of claim 1 , wherein said contact holes to be formed in correspondence to said mask pattern on a resist film formed by a development after exposure on said photosensitive material film have at least a rectangular planar shape with at least each corner arc-shaped.

9. The method of claim 3 , wherein said contact holes to be formed in correspondence to said mask pattern on a resist film formed by a development after exposure on said photosensitive material film have at least a rectangular planar shape with at least each corner are-shaped.

10. The method of claim 4 , wherein said contact holes to be formed in correspondence to said mask pattern on a resist film formed by a development after exposure on said photosensitive material film have at least a rectangular planar shape with at least each corner arc-shaped.

11. A method of selectively exposing a photosensitive material layer formed on said semiconductor film through a mask in order to form contact holes of an electrical circuit provided on a semiconductor thin film crystallized on a glass base plate, wherein the pattern of said mask is rectangular and the length dimension in the direction of the long sides of said rectangular shape is 1.4 as long as or longer than the length dimension in the direction of its short sides.

12. A method of exposing using an attenuated type phase shift mask, wherein a ray from a light source for exposure is made to enter an optical system through an attenuated type mask and to irradiate a resist layer made of a photosensitive material on a glass base plate with a ray from said light source for exposure;

wherein said ray is an i-ray;

wherein said attenuated type mask has a line pattern; and

wherein said optical system is a projection optical system of equal magnification and has the numerical aperture NA which is obtained from the following formula when k 1 is a factor having a value between 0.41 and 0.44 and R is the width of lines to be formed on said resist layer:

NA 2 =k 1×0.365 /R.

13. A method of exposing using an attenuated type phase shift mask claimed in claim 12 , wherein the coherence factor σ of said i-ray ranges from 0.75 to 0.85.

14. A method of exposing using an attenuated type phase shift mask, wherein a ray from a light source for exposure is made to enter an optical system through an attenuated type mask and to irradiate a resist layer made of a photosensitive material on a glass base plate with a ray from said light source for exposure;

wherein said ray is an i-ray;

wherein said attenuated type mask has a contact hole pattern; and

wherein said optical system is a projection optical system of equal magnification, and has the numerical aperture NA which is obtained by the following formula when k 1 is a factor having a value from 0.48 to 0.5 and R is the diameter of the holes to be formed on said resist:

NA 2 =k 1×0.365 /R.

15. A method of exposing using an attenuated type phase shift mask claimed in claim 14 , wherein the coherence factor σ of said i-ray ranges from 0.6 to 0.8.

16. A method of exposing using an attenuated type phase shift mask, wherein a ray from a light source for exposure is made to enter an optical system through an attenuated type mask and to irradiate a resist layer made of a photosensitive material on a glass base plate with a ray from said light source for exposure;

wherein said ray is an i-ray;

wherein said attenuated type mask has a contact hole pattern to be formed on said resist layer on said glass base plate and having a contact hole arrangement pitch of four times as wide as or wider than the diameter of contact holes; and

wherein said optical system has the numerical aperture NA which is obtained by the following equation when k 1 is a factor having a value from 0.48 to 0.5 and R is the diameter of contact holes to be formed on said resist layer:

NA 2 =k 1×0.365 /R.

17. An exposure method using an attenuated type phase shift mask claimed in claim 16 , wherein the coherence factor σ of said i-ray ranges from 0.3 to 0.55.