Semiconductor storage device, semiconductor device, and manufacturing method therefor
View Patent ↗According to the present invention, a gettering layer is deposited both on the side surfaces and the bottom surface of a semiconductor chip. The semiconductor chip is then mounted on the board of a package so that a Schottky barrier is formed on the bottom surface. With this structure, metal ions that pass through the board of the package can be captured by the defect layer deposited on the side surfaces and/or the bottom surface of the semiconductor chip, and by the Schottky barrier.
1. A semiconductor device manufacturing method comprising the steps of:
forming a semiconductor element on a top surface of a semiconductor substrate;
grinding a bottom surface of the semiconductor substrate;
cutting the semiconductor substrate along sides for a semiconductor chip;
forming a gettering layer on the bottom surface and side surfaces of the semiconductor chip by grinding said semiconductor substrate; and
forming a passivation film on the top surface of said semiconductor chip.
2. The semiconductor device manufacturing method according to claim 1 , whereby the gettering layer is deposited on the bottom surface of the semiconductor chip at a step of securing the bottom surface to an assembly board using a metal-containing mounting member, so as to form a Schottky barrier across the entire bottom surface.
3. The method according to claim 1 , wherein the grinding is performed using a grindstone that has a grain size large enough to form a crystal defect layer on the bottom surface of the semiconductor substrate.
4. The method according to claim 1 , wherein a blade for grinding the bottom surface and a blade for cutting out the semiconductor chip have the same sharpness.
5. The method according to claim 1 , wherein said bottom surface and said side surfaces have about a same roughness.
6. A method of forming a semiconductor device comprising the steps of:
forming semiconductor elements on a top surface of a semiconductor substrate;
cutting the semiconductor substrate into at least one semiconductor chip; and
forming a gettering layer on a bottom surface of said chip opposite to said top surface and on side surfaces of said chip by grinding said semiconductor substrate.
7. The method according to claim 6 , wherein the grinding is performed using a grindstone that has a grain size large enough to form a crystal defect layer on the bottom surface of the semiconductor substrate.
8. The method according to claim 6 , wherein a blade for grinding the bottom surface and a blade for cutting out the semiconductor chip have the same sharpness.
9. The method according to claim 6 , wherein said bottom surface and said side surfaces have about a same roughness.