Poly(alkynylthiophene)s and electronic devices generated therefrom
View Patent ↗An electronic device comprising a semiconductive material of Formula (I) wherein R is a suitable hydrocarbon or a heteroatom containing group; and n represents the number of repeating units.
1. An electronic device comprising a homopolymer of Formula (2a) or (2b):
wherein n represents the number of repeating units wherein the homopolymer forms a solution-processed stable channel layer having a mobility of at least 0.001 cm 2 V −1 S −1 and an on/off ratio of at least 10 6 .
2. A device in accordance with claim 1 wherein n represents a number of from about 10 to about 500.
3. A device in accordance with claim 1 wherein n represents a number of from about 20 to about 100.
4. A device in accordance with claim 1 wherein said device is a thin film transistor.
5. A thin film transistor device comprised of a substrate, a gate electrode, a gate dielectric layer, a source electrode and a drain electrode, and in contact with the source/drain electrodes and the gate dielectric layer a semiconductor layer comprising a homopolymer of Formula (2a) or (2b):
wherein n represents the number of repeating units wherein the homopolymer in the semiconductor layer forms a solution-processed stable channel layer having a mobility of at least 0.001 cm 2 V −1 S −1 and an on/off ratio of at least 10 6 .
6. A device in accordance with claim 5 wherein said substrate is a plastic sheet of a polyester, a polycarbonate, or a polyimide; said gate, source and drain electrodes are each independently comprised of silver, gold, nickel, aluminum, chromium, platinum, indium titanium oxide, or a conductive polymer, and said gate dielectric layer is comprised of inorganic nitrides, inorganic oxides, or organic polymers.
7. A device in accordance with claim 5 wherein said substrate is glass or a plastic sheet; said gate, source and drain electrodes are each independently comprised of silver, gold, or chromium; and said gate dielectric layer is comprised of poly(methacrylate), polysiloxane, or poly(vinyl phenol); and wherein said semiconductor layer is deposited by solution processes of spin coating, stamp printing, screen printing, or jet printing.