IP Library Granted Patent US 7,372,071
Granted Patent B2
US 7,372,071 · App. 11/398,981 · Granted May 13, 2008

Functionalized heteroacenes and electronic devices generated therefrom

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Quick Facts
Patent No.
US 7,372,071
App. No.
11/398,981
Granted
May 13, 2008
Kind
B2
Abstract

An electronic device, such as a thin film transistor containing a semiconductor of, for example, of the Formula (I) wherein R represents alkyl, alkoxy, aryl, heteroaryl or a suitable hydrocarbon; each R 1 and R 2 is independently hydrogen (H), a suitable hydrocarbon; a heteroatom containing group or a halogen; R 3 and R 4 are independently a suitable hydrocarbon, a heteroatom containing group, or a halogen; x and y represent the number of groups; Z represents sulfur, oxygen, selenium, or NR′ wherein R′ is hydrogen, alkyl, or aryl; and n and m represent the number of repeating units.

Claims (38)

1. An electronic device comprising a semiconductive material containing a component of Formula (I)

wherein R represents alkyl, alkoxy, aryl, or heteroaryl; each R 1 and R 2 is independently hydrogen (H), alkyl, aryl, a heteroatom containing group, cyano, nitro, or a halogen; R 3 and R 4 are independently alkyl, aryl, a heteroatom containing group, or a halogen; x and y represent the number of groups; Z represents sulfur, oxygen, selenium, or NR′ wherein R′ is hydrogen, alkyl, or aryl; and n and m represent the number of repeating units.

2. A device in accordance with claim 1 wherein R is aryl with from about 6 to about 48 carbon atoms.

3. A device in accordance with claim 1 wherein R is alkyl with from about 1 to about 25 carbon atoms.

4. A device in accordance with claim 1 wherein R is a heteroaryl with from about 7 to about 37 carbon atoms.

5. A device in accordance with claim 1 wherein at least one of R 1 and R 2 is hydrogen.

6. A device in accordance with claim 1 wherein at least one of R 1 and R 2 is alkyl.

7. A device in accordance with claim 1 wherein at least one of R 1 and R 2 is aryl.

8. A device in accordance with claim 1 wherein at least one of R 1 and R 2 is halogen.

9. A device in accordance with claim 1 wherein at least one of R 1 and R 2 is cyano or nitro.

10. A device in accordance with claim 1 wherein at least one of R 3 and R 4 is alkyl.

11. A device in accordance with claim 1 wherein at least one of R 3 and R 4 is aryl.

12. A device in accordance with claim 1 wherein said heteroatom containing group is dialkylamine, diarylamine, alkoxy, trialkylsilyl or triarylsilyl.

13. A device in accordance with claim 1 wherein said heteroatom containing group is thienyl, pyridyl, trialkylsilyl, triarylsilyl, or alkoxyalkoxyaryl.

14. A device in accordance with claim 1 wherein at least one of R 1 , R 2 , R 3 , R 4 and R is alkyl.

15. A device in accordance with claim 1 wherein Z is sulfur, oxygen, or selenium.

16. A device in accordance with claim 1 wherein Z is NR′ wherein R′ is alkyl, or aryl.

17. A device in accordance with claim 1 wherein m is a number of from 0 to about 3.

18. A device in accordance with claim 1 wherein m is 2.

19. A device in accordance with claim 1 wherein m is 1.

20. A device in accordance with claim 1 wherein n is a number of from 0 to about 3.

21. A device in accordance with claim 1 wherein n is 1 or 2.

22. A device in accordance with claim 1 wherein x is a number of from 0 to about 12.

23. A device in accordance with claim 1 wherein x is a number of from 0 to about 6.

24. A device in accordance with claim 1 wherein y is a number of from 0 to about 12.

25. A device in accordance with claim 1 wherein y is a number of from 0 to about 4.

26. A device in accordance with claim 1 wherein R is aryl with 6 to about 36 carbon atoms; R 1 and R 2 are hydrogen; x=y=0; m and n are equal, and m is 1 or 2.

27. A thin film transistor comprised of a substrate, a gate electrode, a gate dielectric layer, a source electrode and a drain electrode, and in contact with the source/drain electrodes and the gate dielectric layer a semiconductor layer comprising a functionalized heteroacene of the formula

wherein R is alkyl, alkoxy, aryl, or heteroaryl; each R 1 and R 2 is independently hydrogen (H), alkyl, aryl, cyano, nitro, a heteroatom containing group or a halogen; R 3 and R 4 are independently alkyl, aryl, a heteroatom containing group, or a halogen; x, and y represent the number of groups; Z represents sulfur, oxygen, selenium, or NR′ wherein R′ is hydrogen, alkyl, or aryl; and m and n represent the number of rings.

28. A device in accordance with claim 27 wherein alkyl is ethyl, propyl, butyl, pentyl, hexyl, heptyl, octyl, nonyl, decyl, undecyl, dodecyl, tridecyl, tetradecyl, pentadecyl, hexadecyl, heptadecyl, octadecyl, nonadecyl, or eicosanyl.

29. A device in accordance with claim 27 wherein aryl is phenyl, tolyl, butylphenyl, pentylphenyl, hexylphenyl, heptylphenyl, octylphenyl, nonylphenyl, decylphenyl, undecylphenyl, dodecylphenyl, tridecylphenyl, tetradecylphenyl, pentadecylphenyl, hexadecylphenyl, heptadecylphenyl, octadecylphenyl, naphthyl, methylnaphthyl, ethylnaphthyl, propylnaphthyl, butylnaphthyl, pentylnaphthyl, hexylnaphthyl, heptylnaphthyl, octylnaphthyl, nonylnaphthyl, decylnaphthyl, undecylnaphthyl, dodecylnaphthyl, anthryl, methylanthryl, ethylanthryl, propylanthryl, butylanthyl, pentylanthryl, octylanthryl, nonylanthryl, decylanthryl, undecylanthryl, or dodecylanthryl.

30. A device in accordance with claim 27 wherein heteroaryl is thienyl, methylthienyl, ethylthienyl, propylthienyl, butylthienyl, hexylthienyl, heptylthienyl, octylthienyl, nonylthienyl, decylthienyl, undecylthienyl, dodecylthienyl, bithiophenyl, methylbithiophenyl, ethylbithiophenyl, propylbithiophenyl, propylbithiophenyl, butylbithiophenyl, pentylbithiophenyl, hexylbithiophenyl, heptylbithiophenyl, octylbithiophenyl, nonylbithiophenyl, decylbithiophenyl, undecylbithiophenyl, dodecylbithiophenyl, pyridyl, methylpyridyl, ethylpyridyl, propylpyridyl, butylpyridyl, pentylpyridyl, hexylpyridyl, heptylpyridyl, octylpyridyl, nonylpyridyl, decylpyridyl, undecylpyridyl, dodecylpyridyl, thiazolyl, methylthiazolyl, ethylthiazolyl, propylthiazolyl, butylthiazolyl, pentylthiazolyl, hexylthiazolyl, heptylthiazolyl, octylthiazolyl, nonylthiazolyl, decylthiazolyl, undecylthiazolyl, or dodecylthiazolyl.

31. A device in accordance with claim 27 wherein the functionalized heteroacene is selected from the group consisting of the following formulas

wherein R 5 is methyl, ethyl, propyl, butyl, pentyl, hexyl, heptyl, octyl, nonyl, decyl, undecyl, dodecyl, tridecyl, tetradecyl, pentadecyl, hexadecyl, heptadecyl, or octadecyl; trifluoromethyl, fluoroethyl, perflucropropyl, perfluorobutyl, pertluoropentyl, pert luorohexyl, perfluoroheptyl, pertluorooctyl, perfluorononyl, pereluorodecyl, pert luoroundecyl, or perfluorododecyl; phenyl, methylphenyl (tolyl), ethylphenyl, propylphenyl, butylphenyl, pentylphenyl, hexylphenyl, heptylphenyl, octylphenyl, nonylphenyl, decylphenyl, undecylphenyl, dodecylphenyl, tridecylphenyl, tetradecylphenyl, pentadecylphenyl, hexadecylphenyl, heptadecylphenyl, octadecylphenyl, trifluoromethylphenyl, fluoroethylphenyl, perluoropropylphenyl, perflucrobutylphenyl, pertluoropentylphenyl, pertluorohexylphenyl, pertluoroheptylphenyl, pertluorooctylphenyl, perfluorononylphenyl, perfluorodecylphenyl, pertluoroundecylphenyl, or pertluorododecylphenyl.

32. A device in accordance with claim 27 wherein said substrate is a plastic sheet of a polyester, a polycarbonate, or a polylmide; and said gate, source, and drain electrodes are each independently comprised of silver, gold, nickel, aluminum, chromium, platinum, or indium titanium oxide, or a conductive polymer, and said gate dielectric layer is comprised of inorganic nitrides or oxides, or organic polymers, silicon nitride, silicon oxide.

33. A device in accordance with claim 27 wherein the functionalized heteroacene comprises a mixture of the cis and trans isomers of said formula.

34. A thin film transistor comprised of a substrate, a gate electrode, a gate dielectric layer, a source electrode, a drain electrode and a layer containing at least one functionalized heteroacene selected from the group consisting of the formulas/structures:

wherein R 5 is methyl, ethyl, propyl, butyl, pentyl, hexyl, heptyl, octyl, nonyl, decyl, undecyl, dodecyl, tridecyl, tetradecyl, pentadecyl, hexadecyl, heptadecyl, or octadecyl; trifluoromethyl, fluoroethyl, perfluoropropyl, perfluorobutyl, perfluoropentyl, pertluorohexyl, periluoroheptyl, perfluorooctyl, perfluorononyl, perfluorodecyl, perfluoroundecyl, or perfluorododecyl; phenyl, methylphenyl (tolyl), ethylphenyl, propylphenyl, butylphenyl, pentylphenyl, hexylphenyl, heptylphenyl, octylphenyl, nonylphenyl, decylphenyl, undecylphenyl, dodecylphenyl, tridecylphenyl, tetradecylphenyl, pentadecylphenyl, hexadecylphenyl, heptadecylphenyl, octadecylphenyl, trifluoromethylphenyl, fluoroethylphenyl, perflucropropylphenyl, perfluorobutylphenyl, perfluoropentylphenyl, pertluorohexylphenyl, pertluoroheptylphenyl, perfluorooctylphenyl, perfluorononylphenyl, perfluorodecylphenyl, perfluoroundecylphenyl, or perflucrododecylphenyl; and wherein X is F, Cl, Br, CN, or NO 2 .

Assignments (9)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 6, 2025
From: XEROX CORPORATION
To: GENESEE VALLEY INNOVATIONS, LLC
Reel/Frame 073842/0479 →
SECOND LIEN NOTES PATENT SECURITY AGREEMENT Recorded Jul 2, 2025
From: XEROX CORPORATION
To: U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 071785/0550 →
FIRST LIEN NOTES PATENT SECURITY AGREEMENT Recorded Apr 11, 2025
From: XEROX CORPORATION
To: U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 070824/0001 →
TERMINATION AND RELEASE OF SECURITY INTEREST IN PATENTS RECORDED AT RF 064760/0389 Recorded Feb 13, 2024
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: XEROX CORPORATION
Reel/Frame 068261/0001 →
SECURITY INTEREST Recorded Nov 20, 2023
From: XEROX CORPORATION
To: JEFFERIES FINANCE LLC, AS COLLATERAL AGENT
Reel/Frame 065628/0019 →
SECURITY INTEREST Recorded Jun 22, 2023
From: XEROX CORPORATION
To: CITIBANK, N.A., AS COLLATERAL AGENT
Reel/Frame 064760/0389 →
RELEASE OF SECURITY INTEREST IN PATENTS AT R/F 062740/0214 Recorded May 18, 2023
From: CITIBANK, N.A., AS AGENT
To: XEROX CORPORATION
Reel/Frame 063694/0122 →
SECURITY INTEREST Recorded Nov 10, 2022
From: XEROX CORPORATION
To: CITIBANK, N.A., AS AGENT
Reel/Frame 062740/0214 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 6, 2006
From: LI, YUNING; WU, YILIANG; ONG, BENG S.; LIU, PING
To: XEROX CORPORATION
Reel/Frame 017771/0254 →