Ethynylene acene polymers and electronic devices generated therefrom
An electronic device comprising a polymer of Formula (I) wherein at least one of R 1 and R 2 is a suitable hydrocarbon, hydrogen, a heteroatom containing group, or a halogen; Ar and Ar′ represent an aromatic moiety; x, y, a, b, c, d, e, f, and g represent the number of groups or rings, respectively; and n represents the number of repeating units.
1. An electronic device comprising a polymer of Formula (I)
wherein R 1 and R 2 are independently alkyl with 1 to about 30 carbon atoms, aryl with about 6 to about 48 carbon atoms, a heteroatom containing group, alkoxy with about 1 to about 30 carbon atoms, trialkylsilyl, triarylsilyl, or halogen; Ar and Ar′ are independently an aromatic moiety; x and y are each independently from zero to 16; a and b are each independently from zero 1 to about 6; c and g are each independently from zero to about 10; d is from zero to about 4, f is from zero to about 6, and the sum of d and f is from 1 to about 6; e is from about 1 to about 10; and n is from 2 to about 5,000.
2. A device in accordance with claim 1 wherein Ar and Ar′ are independently selected from the group consisting of the following structural units
wherein X is selected from the group consisting of C(R′R″), O, S, Se, NR, and Si(R′R″); and wherein R, R′, and R″ are independently selected from the group consisting of hydrogen, alkyl and aryl; and Y is a carbon atom or a nitrogen atom.
3. A device in accordance with claim 1 wherein at least one of R 1 and R 2 is hydrogen.
4. A device in accordance with claim 1 wherein Ar or Ar′ contains from 6 to about 36 carbon atoms.
5. A device in accordance with claim 1 wherein at least one of R 1 and R 2 is alkyl.
6. A device in accordance with claim 1 wherein at least one of R 1 and R 2 is aryl.
7. A device in accordance with claim 1 wherein at least one of R 1 and R 2 is alkoxy.
8. A device in accordance with claim 1 wherein at least one of R 1 and R 2 is halogen.
9. A device in accordance with claim 1 wherein at least one of R 1 and R 2 is cyano or nitro.
10. A device in accordance with claim 1 wherein each x and y independently represents a number of from zero to about 16.
11. A device in accordance with claim 1 wherein each x and y independently represents a number of from zero to about 6.
12. A device in accordance with claim 1 wherein each x and y independently represents zero; and wherein at least one of Ar or Ar′ is substituted.
13. A device in accordance with claim 1 wherein c and g each independently represents a number of from zero to about 4, and wherein the sum of c and g is from zero to about 4.
14. A device in accordance with claim 1 wherein c and g each independently represents a number of from zero to about 2, and wherein the sum of c and g is from zero to about 2.
15. A device in accordance with claim 1 wherein d and f each independently represents a number of from zero to about 4.
16. A device in accordance with claim 1 wherein d and f each independently represents a number of from zero to about 2, and wherein the sum of d and f is from 1 to about 4; wherein d and f each independently represents a number of from zero to about 2, and wherein the sum of d and f is from 1 to about 2; or wherein d and f each independently represents a number of from zero to about 1, and wherein the sum of d and f is 1.
17. A device in accordance with claim 1 wherein e represents a number of from about 1 to about 4.
18. A device in accordance with claim 1 wherein n represents a number from 2 to about 100.
19. A device in accordance with claim 1 wherein n represents a number of from about 10 to about 200.
20. A thin film transistor comprised of a substrate, a gate electrode, a gate dielectric layer, a source electrode and a drain electrode, and in contact with the source/drain electrodes and the gate dielectric layer a semiconductor layer comprised of an ethynylene acene polymer of the formula
wherein R 1 and R 2 are independently alkyl, substituted alkyl, alkoxy, substituted alkoxy, aryl, substituted aryl, a heteroatom containing group, trialkylsilyl, triarylsilyl, or halogen; Ar and Ar′ are independently an aromatic moiety; x and y are each independently from zero to 16; a and b are each independently from 1 to about 6; c and g are each independently from zero to about 10; d is from zero to about 4, f is from zero to about 6, and the sum of d and f is from 1 to about 6; e is from about 1 to about 10; and n is from 2 to about 5,000.
21. A device in accordance with claim 20 wherein at least one of R 1 and R 2 is butyl, pentyl, hexyl, heptyl, octyl, nonyl, decyl, undecyl, dodecyl, tridecyl, tetradecyl, pentadecyl, hexadecyl, heptadecyl, octadecyl, nonadecyl, or eicosanyl.
22. A device in accordance with claim 20 wherein at least one of R 1 and R 2 is phenyl, tolyl, butylphenyl, pentylphenyl, hexylphenyl, heptylphenyl, octylphenyl, nonylphenyl, decylphenyl, undecylphenyl, dodecylphenyl, tridecylphenyl, tetradecylphenyl, pentadecylphenyl, hexadecylphenyl, heptadecylphenyl, or octadecylphenyl.
23. A device in accordance with claim 20 wherein at least one of R 1 and R 2 is methoxy, ethoxy, propyloxy, butyloxy, pentyloxy, hexyloxy, heptyloxy, ocyloxy, nonyloxy, decyloxy, undecyloxy, dodecyloxy, tridecyloxy, tetradecyloxy, pentadecyloxy, hexadecyloxy, heptadecyloxy, octadecyloxy, nonadecyloxy, or eicosanyloxy.
24. A device in accordance with claim 20 wherein at least one of R 1 and R 2 is fluorine, chlorine, bromine, or iodine.
25. A device in accordance with claim 20 wherein said ethynylene acene polymer is one of the following formulas/structures
wherein R is alkyl having from 4 to 18 carbon atoms, phenyl substituted with one alkyl chain having 4 to 18 carbon atoms, or alkoxy having from 4 to 20 carbon atoms; and wherein n is from about 10 to about 100.
26. A device in accordance with claim 20 wherein said substrate is a plastic sheet of a polyester, a polycarbonate, or a polyimide; said gate, source, and drain electrodes are each independently comprised of silver, gold, nickel, aluminum, chromium, platinum, indium titanium oxide, or a conductive polymer; and said gate dielectric layer is comprised of inorganic nitrides or oxides, or organic polymers, silicon nitride, silicon oxide; and wherein said ethynylene acene polymer is deposited by solution processes of spin coating, stamp printing, screen printing, or jet printing.
27. A device in accordance with claim 20 wherein the heteroatom containing group is nitro (NO 2 ), cyano (CN), dialkylamino, diarylamino, alkoxy having from 1 to 20 carbon atoms, trialkylsilyl, or triarylsilyl.
28. A device in accordance with claim 20 wherein the thin film transistor field effect mobility is at least about 0.02 cm 2 /V·sec, and the current on/off ratio is at least 10 4 ; wherein the field effect mobility is at least 0.05 cm 2 /V·sec, and the current on/off ratio is equal to or greater than about 10 5 ; or wherein the field effect mobility is at least 0.1 cm 2 /V·sec, and the current on/off ratio is equal to or greater than larger 10 6 .
29. A device in accordance with claim 20 wherein at least one of R 1 and R 2 is alkyl, substituted alkyl, alkoxy, substituted alkoxy, aryl, or substituted aryl.
30. A thin film transistor comprising a polymer having a structure selected from formulas (1) through (26):
wherein R 3 is alkyl having from 4 to 18 carbon atoms, phenyl substituted with one alkyl chain having 4 to 18 carbon atoms, or alkoxy having from 4 to 20 carbon atoms; wherein X is methyl, CF 3 , NO 2 , CN, F, or Cl; and wherein n is from 2 to about 1,000.