IP Library Granted Patent US 7,550,760
Granted Patent B2
US 7,550,760 · App. 11/399,216 · Granted Jun 23, 2009

Polyacenes and electronic devices generated therefrom

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Quick Facts
Patent No.
US 7,550,760
App. No.
11/399,216
Granted
Jun 23, 2009
Kind
B2
Abstract

An electronic device comprises a semiconductive material containing a homopolyacene of Formula (I): wherein R is a suitable hydrocarbon, a halogen, or a heteroatom containing group; each R′ and R″ are independently a suitable hydrocarbon, a heteroatom containing group, or a halogen; a represents a number of benzene rings on a left side of the central benzene ring; b represents a number of benzene rings on a right side of the central benzene ring; x represents a total number of R′ groups on the left side of the central benzene ring; y represents a total number of R″ groups on the right side of the central benzene ring; and n represents the number of repeating units and is from 2 to about 5,000.

Claims (40)

1. An electronic device comprising:

a semiconductive material containing a homopolyacene of Formula (I)

wherein R is a suitable hydrocarbon, a halogen, or a heteroatom containing group; each R′ and R″ are independently a suitable hydrocarbon, a heteroatom containing group, or a halogen; a represents a number of benzene rings on a left side of the central benzene ring; b represents a number of benzene rings on a right side of the central benzene ring; (a+b) is at least 2; x represents a total number of R′ groups on the left side of the central benzene ring; y represents a total number of R″ groups on the right side of the central benzene ring; and n represents a number of repeating units and is from 2 to about 5,000.

2. A device in accordance with claim 1 where said hydrocarbon is unsubstituted.

3. A device in accordance with claim 1 wherein said hydrocarbon is substituted.

4. A device in accordance with claim 1 wherein said hydrocarbon is alkyl or alkoxy.

5. A device in accordance with claim 1 wherein said hydrocarbon is aryl.

6. A device in accordance with claim 4 wherein said alkyl or said alkoxy contains from 1 to about 30 carbon atoms.

7. A device in accordance with claim 5 wherein said hydrocarbon is aryl and contains from 6 to about 48 carbon atoms.

8. A device in accordance with claim 1 wherein said hydrocarbon is at least one of methyl and phenyl.

9. A device in accordance with claim 1 wherein said heteroatom containing group contains from zero to about 60 carbon atoms.

10. A device in accordance with claim 1 wherein said heteroatom containing group contains from 1 to about 25 carbon atoms.

11. A device in accordance with claim 1 wherein said heteroatom containing group is NO 2 , CN, thiazolyl, thienyl, furyl, pyridyl, trimethylsilyl, triethylsilyl, tripropylsilyl, tributylsilyl, tripentylsilyl, trihexylsilyl, triphenylsilyl, tritolylsilyl, tri(ethylphenyl)silyl, tri(propylphenyl)silyl, tri(butylphenyl)silyl, tri(pentylphenyl)silyl, tri(hexylphenyl)silyl, tri(heptylphenyl)silyl, tri(octylphenyl)silyl, tri(nonylphenyl)silyl, tri(decylphenyl)silyl, or tri(dodecylphenyl)silyl.

12. A device in accordance with claim 1 wherein said halogen is chloride, fluoride, iodide, or bromide.

13. A device in accordance with claim 1 wherein said hydrocarbon is methyl, ethyl, propyl, butyl, pentyl, hexyl, heptyl, octyl, nonyl, decyl, undecyl, dodecyl, tridecyl, tetradecyl, pentadecyl, hexadecyl, heptadecyl, octadecyl, phenyl, methylphenyl tolyl), ethylphenyl, propylphenyl, butylphenyl, pentylphenyl, hexylphenyl, heptylphenyl, octylphenyl, nonylphenyl, decylphenyl, undecylphenyl, dodecylphenyl, tridecylphenyl, tetradecylphenyl, pentadecylphenyl, hexadecylphenyl, heptadecylphenyl, or octadecylphenyl.

14. A device in accordance with claim 1 wherein at least one of said R, R′ and R″ is phenyl.

15. A device in accordance with claim 1 wherein each x and y is independently a number of from zero to about 12; each a and b is a number of from zero to about 3; and n represents a number of from about 2 to about 1,000.

16. A device in accordance with claim 1 wherein each x and y is independently a number of from about zero to about 6; each a and b is a number of from about zero to about 3, and n represents a number of from about 10 to about 200.

17. A device in accordance with claim 1 wherein each x and y is independently a number of from zero to about 4; each a and b is a number of from zero to about 4; and n represents a number of from about 20 to about 100.

18. A device in accordance with claim 1 wherein each x and y is zero; each a and b is a number of from zero to about 3; and n represents a number of from about 20 to about 100.

19. A device in accordance with claim 1 wherein at least one of R, R′, or R″ is methyl, ethyl, propyl, butyl, pentyl, hexyl, heptyl, octyl, nonyl, decyl, undecyl, dodecyl, tridecyl, tetradecyl, pentadecyl, hexadecyl, heptadecyl, octadecyl, nonadecyl, eicosanyl, phenyl, methylphenyl(tolyl), ethylphenyl, propylphenyl, butylphenyl, pentylphenyl, hexylphenyl, heptylphenyl, octylphenyl, nonylphenyl, decylphenyl, undecylphenyl, dodecylphenyl, tridecylphenyl, tetradecylphenyl, pentadecylphenyl, hexadecylphenyl, heptadecylphenyl, octadecylphenyl; or thiazolyl, thienyl, furyl, pyridyl, trimethylsilyl, triethylsilyl, tripropylsilyl, tributylsilyl, tripentylsilyl, trihexylsilyl, triphenylsilyl, tritolylsilyl, tri(ethylphenyl)silyl, tri(propylphenyl)silyl, tri(butylphenyl)silyl, tri(pentylphenyl)silyl, tri(hexylphenyl)silyl, tri(heptylphenyl)silyl, tri(octylphenyl)silyl, tri(nonylphenyl)silyl, tri(decylphenyl)silyl, tri(dodecylphenyl)silyl, or mixtures thereof.

20. A device in accordance with claim 1 wherein each R is alkyl with about 1 to about 12 carbon atoms, aryl with from about 6 to about 24 carbon atoms, or a heteroatom containing group with from about 1 to about 16 carbon atoms.

21. A device in accordance with claim 1 wherein R is alkyl or aryl; x is from zero to 3 and y is from zero to 3; the sum of x and y is from zero to about 6; a is from zero to about 6 and b is from zero to about 6.

22. A thin film transistor comprising:

a substrate, a gate electrode, a gate dielectric layer, a source electrode and a drain electrode, and

in contact with the source/drain electrodes and the gate dielectric layer a semiconductor layer comprised of a homopolyacene of Formula (I):

wherein R is a suitable hydrocarbon, a halogen or a heteroatom containing group; each R′ and R″ are independently a suitable hydrocarbon, a heteroatom containing group or a halogen; a represents a number of benzene rings on a left side of the central benzene ring; b represents a number of benzene rings on a right side of the central benzene ring; (a+b) is from 2 to about 6; x represents a total number of R′ groups on the left side of the central benzene ring; y represents a total number of R″ groups on the right side of the central benzene ring; and n represents a number of repeating units and is from 2 to about 5,000.

23. A transistor in accordance with claim 22 wherein said hydrocarbon is butyl, pentyl, hexyl, heptyl, octyl, nonyl, decyl, undecyl, dodecyl, tridecyl, tetradecyl, pentadecyl, hexadecyl, heptadecyl, octadecyl, nonadecyl, or eicosanyl.

24. A transistor in accordance with claim 22 wherein said homopolyacene is represented by the following formulas (1) through (12)

wherein at least one of R and R′ is methyl, ethyl, propyl, butyl, pentyl, hexyl, heptyl, octyl, nonyl, decyl, undecyl, dodecyl, tridecyl, tetradecyl, pentadecyl, hexadecyl, heptadecyl, octadecyl, phenyl, methylphenyl(tolyl), ethylphenyl, propylphenyl, butylphenyl, pentylphenyl, hexylphenyl, heptylphenyl, octylphenyl, nonylphenyl, decylphenyl, undecylphenyl, dodecylphenyl, tridecylphenyl, tetradecylphenyl, pentadecylphenyl, hexadecylphenyl, heptadecylphenyl, or octadecylphenyl, a heteroatom containing group of CN, thiazolyl, thienyl, furyl, pyridyl, trimethylsilyl, triethylsilyl, tripropylsilyl, tributylsilyl, tripentylsilyl, trihexylsilyl, triphenylsilyl, tritolylsilyl, tri(ethylphenyl)silyl, tri(propylphenyl)silyl, tri(butylphenyl)silyl, tri(pentylphenyl)silyl, tri(hexylphenyl)silyl, tri(heptylphenyl)silyl, tri(octylphenyl)silyl, tri(nonylphenyl)silyl, tri(decylphenyl)silyl, tri(dodecylphenyl)silyl, or chloride, bromide, fluoride and iodide; and wherein n is from about 5 to about 100.

25. A transistor in accordance with claim 22 wherein said substrate is a plastic sheet of a polyester, a polycarbonate, or a polyimide; said gate source and drain electrodes are each independently comprised of silver, gold, nickel, aluminum, chromium, platinum, or indium titanium oxide, or a conductive polymer, and said gate dielectric layer is comprised of inorganic nitrides or oxides, organic polymers, or silicon nitride, silicon oxide; and wherein said homopolyacene is deposited by solution processes of spin coating, stamp printing, screen printing, or jet printing.

26. A transistor in accordance with claim 22 wherein said hydrocarbon is alkyl, aryl, alkoxy, a substituted alkyl, a substituted aryl, or a substituted alkoxy; and wherein said alkyl contains from 5 to about 25 carbon atoms, and said aryl contains from 6 to about 24 carbon atoms.

27. A transistor in accordance with claim 24 wherein at least one of R or R′ is methyl, ethyl, propyl, butyl, pentyl, hexyl, heptyl, octyl, nonyl, decyl, undecyl, dodecyl, tridecyl, tetradecyl, pentadecyl, hexadecyl, heptadecyl, octadecyl, nonadecyl, eicosanyl, phenyl, methylphenyl(tolyl), ethylphenyl, propylphenyl, butylphenyl, pentylphenyl, hexylphenyl, heptylphenyl, octylphenyl, nonylphenyl, decylphenyl, undecylphenyl, dodecylphenyl, tridecylphenyl, tetradecylphenyl, pentadecylphenyl, hexadecylphenyl, heptadecylphenyl, octadecylphenyl; or thiazolyl, thienyl, furyl, pyridyl, trimethylsilyl, triethylsilyl, tripropylsilyl, tributylsilyl, tripentylsilyl, trihexylsilyl, triphenylsilyl, tritolylsilyl, tri(ethylphenyl)silyl, tri(propylphenyl)silyl, tri(butylphenyl)silyl, tri(pentylphenyl)silyl, tri(hexylphenyl)silyl, tri(heptylphenyl)silyl, tri(octylphenyl)silyl, tri(nonylphenyl)silyl, tri(decylphenyl)silyl, tri(dodecylphenyl)silyl, or mixtures thereof.

28. A transistor in accordance with claim 24 wherein said polyacene is poly(9,10-bis(decynyl)anthracene-2,6-diyl), poly(9,10-bis (ethynyl)anthracene-2,6-diyl), poly(9,10-bis(dodecynyl)anthracene-2,6-dilyl), or mixtures thereof.

29. A homopolyacene as represented by Formula (I)

wherein R is a suitable hydrocarbon, a halogen, or a heteroatom containing group; each R′ and R″ are independently a suitable hydrocarbon, a heteroatom containing group or a halogen; a represents a number of benzene rings on a left side of the central benzene ring; b represents a number of benzene rings on a right side of the central benzene ring; (a+b) is from 2 to about 6; x represents a total number of R′ groups on the left side of the central benzene ring; y represents a total number of R″ groups on the right side of the central benzene ring; and n represents a number of repeating units and is from 2 to about 5,000; wherein the homopolyacene is a homopolymer.

30. A homopolyacene in accordance with claim 29 and selected from the group consisting of formulas (1) through (12):

wherein each R is a substituted or unsubstituted hydrocarbon group, or a heteroatom containing group, and wherein n is a number of from about 2 to about 1,000.

31. A homopolyacene in accordance with claim 29 wherein x and y are each a number of from zero to about 12; each a and b is a number of from zero to about 6; and n represents a number of from about 2 to about 1,000.

32. A homopolyacene in accordance with claim 29 wherein said homopolyacene is poly(9,10-bis(decynyl)anthracene-2,6-diyl), poly(9,10-bis (ethynyl)anthracene-2,6-diyl), poly(9,10-bis(dodecynyl)anthracene 2,6-dilyl), or mixtures thereof.

Assignments (8)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 6, 2025
From: XEROX CORPORATION
To: GENESEE VALLEY INNOVATIONS, LLC
Reel/Frame 073842/0479 →
SECOND LIEN NOTES PATENT SECURITY AGREEMENT Recorded Jul 2, 2025
From: XEROX CORPORATION
To: U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 071785/0550 →
FIRST LIEN NOTES PATENT SECURITY AGREEMENT Recorded Apr 11, 2025
From: XEROX CORPORATION
To: U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 070824/0001 →
TERMINATION AND RELEASE OF SECURITY INTEREST IN PATENTS RECORDED AT RF 064760/0389 Recorded Feb 13, 2024
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: XEROX CORPORATION
Reel/Frame 068261/0001 →
SECURITY INTEREST Recorded Nov 20, 2023
From: XEROX CORPORATION
To: JEFFERIES FINANCE LLC, AS COLLATERAL AGENT
Reel/Frame 065628/0019 →
SECURITY INTEREST Recorded Jun 22, 2023
From: XEROX CORPORATION
To: CITIBANK, N.A., AS COLLATERAL AGENT
Reel/Frame 064760/0389 →
RELEASE OF SECURITY INTEREST IN PATENTS AT R/F 062740/0214 Recorded May 18, 2023
From: CITIBANK, N.A., AS AGENT
To: XEROX CORPORATION
Reel/Frame 063694/0122 →
SECURITY INTEREST Recorded Nov 10, 2022
From: XEROX CORPORATION
To: CITIBANK, N.A., AS AGENT
Reel/Frame 062740/0214 →