IP Library Granted Patent US 8,022,551
Granted Patent B2
US 8,022,551 · App. 11/399,856 · Granted Sep 20, 2011

Solder composition for electronic devices

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Quick Facts
Patent No.
US 8,022,551
App. No.
11/399,856
Granted
Sep 20, 2011
Kind
B2
Abstract

Each of junctions formed between a semiconductor device and a substrate comprises metal balls of Cu, or other materials and compounds of Sn and the metal balls, and the metal balls are bonded together by the compounds.

Claims (11)

1. A semiconductor module comprising a substrate having an electrode, a chip component mounted on said substrate and a semiconductor chip mounted on said substrate, wherein said chip component is connected to said electrode with a solder bonding material, said solder bonding material being substantially free of lead (Pb) and comprising an intermetallic compound, an amount of unreacted solder on a periphery of said intermetallic compound, and a plurality of copper (Cu) balls disposed in said intermetallic compound, said intermetallic compound having a melting point higher than that of said solder.

2. A semiconductor module according to claim 1 , wherein said intermetallic compound includes Cu 6 Sn 5 .

3. A semiconductor module according to claim 2 , wherein said intermetallic compound further includes Cu 3 Sn.

4. A semiconductor module according to claim 2 , wherein said plurality of Cu balls each has a diameter ≧5 μm.

5. A semiconductor module according to claim 1 , wherein said module comprises an RF module.

6. A semiconductor module according to claim 1 , wherein said module comprises one of a SAW element, a power amplifier module, or a module for monitoring a Li battery.

7. A semiconductor module according to claim 1 , wherein said chip component comprises a chip resistor or a chip capacitor.

8. A semiconductor module according to claim 1 , wherein at least one of said Cu balls is connected to said electrode of said substrate by said intermetallic compound.

9. A semiconductor module according to claim 1 , wherein both of said Cu balls and said intermetallic compound have a melting point greater than 260° C.

10. A semiconductor module according to claim 1 , wherein each of said Cu balls consist substantially entirely of copper.

11. A semiconductor module according to claim 1 , wherein said solder includes Sn and said intermetallic compound includes a CuSn compound.

Assignments (1)
CHANGE OF ADDRESS Recorded Nov 29, 2017
From: RENESAS ELECTRONICS CORPORATION
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 044928/0001 →