Selective filtering of wavelength-converted semiconductor light emitting devices
View Patent ↗A structure includes a semiconductor light emitting device including a light emitting layer disposed between an n-type region and a p-type region. The light emitting layer emits first light of a first peak wavelength. A wavelength-converting material that absorbs the first light and emits second light of a second peak wavelength is disposed in the path of the first light. A filter material that transmits a portion of the first light and absorbs or reflects a portion of the first light is disposed over the wavelength-converting material.
1. A structure comprising:
a semiconductor light emitting device comprising a light emitting layer disposed between an n-type region and a p-type region, the light emitting layer being configured to emit first light having a first peak wavelength;
at least one wavelength-converting material disposed in a path of the first light, wherein the wavelength-converting material is configured to absorb a first portion of the first light and emit second light having a second peak wavelength; and
a filter material disposed on the at least one wavelength-converting material, wherein the filter material comprises a plurality of dielectric layers, is configured to reflect a second portion of the first light, and is configured to transmit a third portion of the first light.
2. The structure of claim 1 wherein composite light comprised of the third portion of the first light and the second light corresponds to a predetermined spectrum.
3. The structure of claim 1 wherein composite light comprised of the third portion of the first light and the second light is white.
4. The structure of claim 1 wherein the filter material is configured to transmit the second light.
5. The structure of claim 1 wherein the light emitting layer comprises a III-nitride material.
6. The structure of claim 1 wherein the wavelength-converting material comprises cerium doped yttrium aluminum garnet.
7. The structure of claim 1 wherein the wavelength-converting material is disposed on a surface of a flip chip mounted III-nitride light emitting device.
8. A method comprising:
providing a semiconductor light emitting device comprising a light emitting layer disposed between an n-type region and a p-type region, the light emitting layer being configured to emit first light having a first peak wavelength;
disposing at least one wavelength-converting material in a path of the first light, wherein the wavelength-converting material is configured to absorb a first portion of the first light and emit second light having a second peak wavelength; and
providing a filter material disposed on the at least one wavelength-converting material, wherein the filter material comprises a plurality of dielectric layers, is configured to reflect a second portion of the first light, and is configured to transmit a third portion of the first light.
9. The method of claim 8 wherein composite light comprised of the third portion of the first light and the second light corresponds to a predetermined spectrum.
10. The method of claim 8 wherein composite light comprised of the third portion of the first light and the second light is white.
11. The method of claim 8 wherein the filter material is configured to transmit the second light.
12. The method of claim 8 wherein the light emitting layer comprises a III-nitride material.
13. The method of claim 8 wherein the wavelength-converting material comprises cerium doped yttrium aluminum garnet.
14. The method of claim 8 wherein the wavelength-converting material is disposed on a surface of a flip chip mounted III-nitride light emitting device.
15. The structure of claim 1 wherein the wavelength-converting material is disposed between the semiconductor light emitting device and the filter material.
16. The method of claim 8 wherein the wavelength-converting material is disposed between the semiconductor light emitting device and the filter material.