Method of fabricating array substrate for liquid crystal display device
View Patent ↗A method of fabricating an array substrate for a liquid crystal display device is provided. The method includes steps of forming an amorphous silicon pattern on a substrate; forming a catalyst metal pattern on the amorphous silicon pattern; annealing the amorphous silicon pattern to be converted into a polycrystalline silicon pattern using the catalyst metal pattern as a catalyst; forming a gate insulating layer on the polycrystalline silicon pattern; forming a gate electrode on the gate insulation layer at a position corresponding to the polycrystalline silicon pattern; doping the polycrystalline silicon pattern with impurities using the gate electrode as a doping mask to form an ohmic contact layer and an active layer; forming an interlayer insulating layer having first and second contact holes on the gate electrode, the first and second contact holes exposing portions of the ohmic contact layer; and forming a source electrode and a drain electrode on the interlayer insulating layer, the source electrode and the drain electrode connected to the ohmic contact layer respectively through the first and second contact holes.
1. A method of fabricating an array substrate for a liquid crystal display device, comprising steps of:
forming an amorphous silicon pattern on a substrate;
forming a catalyst metal pattern on the amorphous silicon pattern;
annealing the amorphous silicon pattern to be converted into a polycrystalline silicon pattern using the catalyst metal pattern as a catalyst;
forming a gate insulating layer on the polycrystalline silicon pattern; forming a gate electrode on the gate insulation layer at a position corresponding to the polycrystalline silicon pattern;
doping the polycrystalline silicon pattern with impurities using the gate electrode as a doping mask to form an ohmic contact layer and an active layer;
forming an interlayer insulating layer having first and second contact holes on the gate electrode, the first and second contact holes exposing portions of the ohmic contact layer; and
forming a source electrode and a drain electrode on the interlayer insulating layer, the source electrode and the drain electrode connected to the ohmic contact layer respectively through the first and second contact holes,
wherein the step of forming the catalyst metal pattern includes forming a photoresist pattern on the amorphous silicon pattern, the photoresist pattern having at least two openings exposing the amorphous silicon pattern, forming a catalyst metal layer on the photoresist pattern, and removing the photoresist pattern and the catalyst metal layer on the photoresist pattern so that the catalyst metal pattern remains on the amorphous silicon pattern.
2. The method according to claim 1 , wherein
first and second openings of the at least two openings correspond to both ends of the amorphous silicon pattern, respectively.
3. The method according to claim 1 , further comprising a step of heating the polycrystalline silicon pattern so that catalyst metal remaining in the polycrystalline silicon pattern is gathered at a surface of the polycrystalline silicon pattern.
4. The method according to claim 3 , wherein the step of heating the polycrystalline silicon pattern is performed under an oxygen ambient.
5. The method according to claim 3 , wherein the step of heating the polycrystalline silicon pattern is performed at a temperature range between about 300 and about 650 degrees Celsius for a time period less than about 2 hours.
6. The method according to claim 3 , wherein the step of heating the polycrystalline silicon pattern is performed at a temperature range between about 550 and about 650 degrees Celsius for a time period less than about 30 minutes.
7. The method according to claim 3 , further comprising a step of eliminating the catalyst metal on the surface of the polycrystalline silicon pattern.
8. The method according to claim 7 , wherein the step of eliminating the catalyst metal includes one of an etching method and a polishing method.
9. The method according to claim 3 , wherein the gathered catalyst metal forms a layer on the surface of the polycrystalline silicon pattern.
10. The method according to claim 9 , further comprising a step of eliminating the layer on the surface of the polycrystalline silicon pattern.
11. The method according to claim 10 , wherein the step of eliminating the layer on the surface of the polycrystalline silicon pattern includes one of an etching method and a polishing method.
12. The method according to claim 1 , further comprising steps of:
forming a passivation layer on the source electrode and the drain electrode, the passivation layer having a drain contact hole exposing the drain electrode; and
forming a pixel electrode on the passivation layer and connected to the drain electrode.
13. The method according to claim 1 , wherein the step of annealing the amorphous silicon pattern is performed under an ambient including one of oxygen, nitrogen and hydrogen.
14. The method according to claim 1 , wherein the step of annealing the amorphous silicon pattern is performed at a temperature range between 300 and 650 degrees Celsius.
15. The method according to claim 1 , the step of annealing the amorphous silicon pattern is performed for less than about 2 hours.
16. The method according to claim 1 , wherein the annealing the amorphous silicon pattern is performed at a temperature range between 550 and 650 degrees Celsius for less than about 30 minutes.
17. The method according to claim 1 , wherein the catalyst metal layer includes one of nickel and palladium.
18. The method according to claim 1 , further comprising a step of forming a buffer layer on the substrate, wherein the step of forming the amorphous silicon pattern includes forming the amorphous silicon pattern on the buffer layer.