Active-matrix display with electrooptic elements having lower bilayer electrodes
View Patent ↗In this display, an upper electrical insulation layer covers the active matrix; each electrooptic element comprises a lower supply electrode that is applied to this insulation layer. According to the invention, this lower electrode includes an organic conducting layer applied directly to said insulation layer and a metal layer covering the organic conducting layer. Such a structure makes it possible to optimize both planarization and light extraction by an optical cavity effect thereby improving the performance of the display.
1. A display comprising a substrate that supports:
an active matrix formed on said substrate;
an upper electrical insulation layer covering said active matrix; and
an array of electrooptic elements placed on said insulation layer, wherein each electrooptic element includes a lower supply electrode applied to said insulation layer, wherein said lower supply electrode includes an organic conducting layer contacting directly said upper insulation layer and a metal layer covering the organic conducting layer,
wherein the display includes features that are formed on the substrate, that are transposed through the insulation layer, and that are planarized by the organic conducting layer of said lower supply electrodes, and
wherein, away from any vias gassing through this insulation layer, this insulation layer has a constant thickness that varies by no more than 10% over its area.
2. Display according to claim 1 , wherein each electrooptic element also includes an upper electrode and wherein said electrooptic elements are electroluminescent diodes each having at least one organic electroluminescent layer inserted between the lower electrode and the upper electrode of this diode.
3. Display according to claim 2 , wherein, for each diode, the lower electrode is reflecting towards the light emitted by this diode and the upper electrode is semireflecting towards the same light.
4. Display according to claim 2 , wherein for each diode, the distance between the lower electrode and the upper electrode is suitable for forming, between these electrodes, a resonant optical cavity for the light emitted by this diode.
5. Display according to claim 4 , wherein said distance is equal to 80 nm or less.
6. Display according to claim 1 , wherein said display comprises only a single substrate supporting both said active matrix and the diode array.
7. Display according to claim 1 , wherein the thickness of said insulation layer is equal to 100 nm or less.
8. Display according to claim 1 , wherein said insulation layer is made of inorganic material.
9. Display according to claim 1 , wherein, when the active matrix includes an array of circuits for supplying and driving the electrooptic elements, each circuit having a supply output terminal, said organic conducting layer of the lower supply electrode of each electrooptic element passes through, by means of a via, said insulation layer so as to electrically connect said lower electrode of this electrooptic element to the supply output terminal of one of the circuits for supplying and driving the active matrix.
10. Display according to claim 1 , wherein the active matrix includes an array of circuits comprising components for supplying and driving the electrooptic elements, and arrays of electrodes for driving said circuits and for supplying these electrooptic elements via said circuits, wherein said features comprises some of said components and/or said electrodes.